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      low valence
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  low valence
Photoelectron emission from semiconductors with low valence band dispersion
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Chromium oxide catalysts with low valence state ions for heterocyclic ring formation
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Samples containing Cr2O3 showed transformations from diamagnetic to paramagnetic behaviour with the increase in Cr2O3 content, which may be due to the change of chromium ions from the high valence to the low valence state.
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XPS results reveal that the addition of Te to K2MoO4/SiO2 increase the amount of low valence states of molybdenum and sulfur species, which are related to the formation of methanethiol.
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ESR results reveal that the addition of Te decreases the content of "oxo-Mo5+" species and increase that of the "oxysulfo-Mo5+" species, simultaneously increase the low valence states of sulfur species.
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         The effects of light and thermal and the hydrolysis of bis(triphenyl-silyl)chromate and the surface reactions in the preparing process of bis (triphenylsilyl)chromate catalyst have been studied. The results show that while the bis(triphenylsilyl)chromate was precipitated on the silica, it was reacted with hydroxyl group of surface of silica, and formed a surface organo-chromium compound, but the valent state of chromium was unchanged. After added triisobutyl aluminium, the surface compounds were reduced to ...
            本文采用红外光谱分析等方法,研究了双(三苯基甲硅烷)铬酸酯的加热、光照和水解反应的一些性质;探讨了双(三苯基甲硅烷)铬酸酯催化剂配制过程的化学变化。当其沉淀在硅胶上时,与硅胶表面羟基反应,生成表面有机铬化合物,铬的价态不变。加入烷基铝后,表面铬化合物还原生成含有Cr—C或Cr—O键的低价表面化合物,其对乙烯聚合具有催化活性。并指出了本催化剂活性组份可能的负载机理。
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         X-ray photoelectron spectrosoopy has been used to analyse the composition and valence of TiO2 films. The TiO2 films are deposited on the Si substrate to avoid spectrum-peak shift induced by electricity. It is shown that main composition in both absorptive TiO2 film and transparent TiO2 film are TiO2. In the absorptive TiO2 film partial TiO2 is changes into titanium oxide with low valence. The large amount of C on the surface of TiO2 film is responsible for the surface absorption.
            用X-射线电子能谱仪对TiO_2光学薄膜的组分和价态进行分析.为了避免静电效应引起的ESCA谱峰移动,需要将TiO_2薄膜淀积在Si基体上.可以看出,不论是有吸收的还是透明的TiO_2膜,其主要成分都是TiO_2,在有吸收的TiO_2薄膜中,部分TiO_2已分解为钛的低价氧化物.TiO_2膜表面含有大量的C,可能引起较大的表面吸收.
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         The GaAs-Nb-Mo-Au Schottky barrier diodes have been fabricated on epitaxialGaAs layers by electron beam evaporation of Nb and then D. C.plasma sputtering ofMo and Au.The compositional depth profiles and the interfacial characteristics ofthese diodes are measured by XPS associated with Ar ion etching.The results obtainedare as follows:The interdiffusion between Au and GaAs can be prevented if the thi-ckness of the sputtered Mo layer is larger than 1000 A.The pure Nb layer no longerexists as a result of the M...
            在GaAs外延层上用电子束蒸发Nb及直流等离子体溅射Mo和Au的办法,制备了GaAs-Nb-Mo-Au结构的肖脱基势垒二极管.用XPS结合氩离子刻蚀测量了它的成分深度分布及界面特性,得到:当溅射Mo层厚度大于1000 A时,Au和GaAs之间的互扩散可以被阻挡住.Mo向Nb中的扩散使单独的Nb层不复存在,二极管成为GaAs-(Nb,Mo、Ga、As)-Mo-(MoAu)-Au结构.在界面过渡区中,Mo以金属形式存在,而Nb则同GaAs表面的天然氧化层反应后生成为低价的氧化铌.MoNb-GaAs肖脱基势垒比Mo-GaAs结构热稳定性好的原因,可能是同Nb氧化物的高生成热相联系的.
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