助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   two - dimensional 在 无线电电子学 分类中 的翻译结果: 查询用时:1.402秒
图标索引 在分类学科中查询
所有学科
无线电电子学
数学
生物学
计算机软件及计算机应用
化学
电信技术
自动化技术
物理学
地质学
更多类别查询

图标索引 历史查询
 

two    
dimensional    
相关语句
  “two - dimensional”译为未确定词的双语例句
    Theoretical and Applicational Study of One and Two Dimensional Photonic Crystals
    一维和二维光子带隙材料的理论和应用研究
短句来源
    Computer Aided Two-Dimensional Analysis of a GaAs MESFET
    GaAs MESFET二维计算机辅助分析
短句来源
    Modulation-Doped (AI,Ga)As-GaAs Heterojunction Two-Dimensional Electron Gas Field-Effect Transistor (TEGFET)
    调制掺杂(Al,Ga)As-GaAs异质结二维电子气场效应晶体管(TEGFET)
短句来源
    Two Dimensional Numerical Analysis of GaAs FET's by Using Finite-Element Method
    GaAS FET’s的有限元二维数值分析
短句来源
    Two-Dimensional Steady State Analysis of MOS Devices
    MOS器件的二维稳态分析
短句来源
更多       
查询“two - dimensional”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
没有找到相关例句


Recording of Chinese characters with two-dimensional laser scanning was studied experimentally. An acousto-optie scanner was used for scanning characters in vertical direction and a vibrating mirror in horizontal direction. The experimental results show that the recording has some merits of high quality, fast speed and simple structure.

实验研究了二维激光扫描显示记录汉字的方法.采用声光扫描器作文字垂直方向扫描,振镜作水平方向扫描.实验结果表明,记录的文字质量好,速度高,结构简单.

In this paper the self-sharpening effect of electron beam landing on the target in a vidicon and its influence on resolution of electron beam have been digitally analyzed with computer. The mathematical-physical models applied are as follows: The distribution of current density in electron beam is Gaussian; the energy distribution of electrons in beam is Maxwellian; and the signal-readout model is capacitor discharge model. When the model of cross section of beam is one-dimensional, the self-sharpening...

In this paper the self-sharpening effect of electron beam landing on the target in a vidicon and its influence on resolution of electron beam have been digitally analyzed with computer. The mathematical-physical models applied are as follows: The distribution of current density in electron beam is Gaussian; the energy distribution of electrons in beam is Maxwellian; and the signal-readout model is capacitor discharge model. When the model of cross section of beam is one-dimensional, the self-sharpening effect of beam in 1(1/4)" and 2/3" plumbicon, 1" Sb2S3 vidicon and 1" saticon are computed. Also their influences on AR (amplitude response) of electron beam have been computed. The influences of beam current, signal current, equivalent temperature of beam, target capacitor and velocity of scanning on the self-sharpening effect have been analyzed. When the model of cross section of beam is two-dimensional, the self-sharpening effect of beam in 1(1/4)" plumbicon, as an example, is given.

本文对Vidicon型摄象管中电子束着靶时的自变尖效应及其对电子束分辨能力的影响进行了计算机数值分析。所采用的数学物理模型为电子束中电流密度在横截面上的分布为Gauss分布;电子束中电子的能量分布为Maxwell分布;电子束读出靶面信息的模型为电容放电模型。在电子束截面为一维模型时,计算了1 1/4″、1″、2/3″PbO管(plumbicon)1″Sb_2S_3管和1″硒砷碲管(saticon)中电子束自变尖的情况及其对电子束幅度响应函数(AR)的影响。分析了束电流、信号电流、束等效温度、靶面电容、扫描速度等因素在自变尖效应中所起的作用。本文还以1 1/4″PbO靶管为例,给出了电子束截面为二维模型时,电子束有效着靶截面的自变尖情况。

A general program for two-dimensional analysis of the MESFET has been written and especially a numerical analysis for the GaAs MESFET is performed. As a result, electric potential and free electron densities in the channel have been achieved at a typical bias; some of important device parameters are calculated. Also given in the paper is the explanation for saturation mechanism of source-drain current of short-gate devices. The calculated results are in good agreement with that published in foreign...

A general program for two-dimensional analysis of the MESFET has been written and especially a numerical analysis for the GaAs MESFET is performed. As a result, electric potential and free electron densities in the channel have been achieved at a typical bias; some of important device parameters are calculated. Also given in the paper is the explanation for saturation mechanism of source-drain current of short-gate devices. The calculated results are in good agreement with that published in foreign literatures.

编制了MESFET通用二维分析程序.通过对一个GaAs MESFET进行二维数值分析,得到了典型偏置条件下,沟道内各点的静电电位和自由电了浓度,计算了某些重要的器件参数.解释了短栅器件收漏电流泡和机理.计算结果与国外文献中有关报道相符.

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关two - dimensional的内容
在知识搜索中查有关two - dimensional的内容
在数字搜索中查有关two - dimensional的内容
在概念知识元中查有关two - dimensional的内容
在学术趋势中查有关two - dimensional的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社