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optical emission
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  光发射
     Study of Power Dissipation Mechanism of SiH_4 RF Glow Discharge by Optical Emission Spectroscopy
     SiH_4射频放电功率耗散机制的光发射研究
短句来源
     Study of properties of SiH4rf golw discharge plasma by optical emission spectroscopy
     SiH_4射频辉光放电等离子体特性的光发射研究
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     In situ optical emission spectroscopy(OES) diagnosis on RFgenerated SiH4 plasmas under different deposition conditions to fabricate aSi:H/μcSi:H films has been presented.
     通过对RF-PECVD技术沉积氢化非晶/微晶硅(a-Si:H/μc-Si:H)薄膜沉积过程中硅烷(SiH4)等离子体的光发射谱(OES)原位测量,系统地研究了不同的等离子体工艺条件下,特征发光峰强度(ISiH*、IHα)的变化规律。
短句来源
     A Measurement of Optical Emission from the Rear Surface with Solid Targets Irradiated by Ultrashort Pulse Laser
     超短脉冲激光辐照固体靶背向光发射的测量
短句来源
     Optical emission spectra of SiH4 rf glow discharge were measured by OMA4000. Influence of rf power and reactive gas flow rate on the power of emissive .
     采用OMA-4000测量了SiH_4射频辉光放电等离子体的光发射谱,研究了其谱线强度随放电射频功率和反应气体流量间的变化关系。
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  发射
     OPTICAL EMISSION SPECTROSCOPIC STDUIES OF LASERINDUCED PLASMA FROM THE ABLATED Y_1Ba_2Cu_3O_x SUPERCONDUCTING TARGET
     Y_1Ba_2Cu_3O_x超导靶激光诱导等离子体发射光谱的研究
短句来源
     Studies on C_2 radical by optical emission spectroscopy in an inductively-coupled CF_4 /CH_4 plasma
     使用发射光谱对感应耦合CF_4/CH_4等离子体中C_2基团形成机理的研究
短句来源
     The optical emission spectroscopy has been applied to study the emission spectra from N_2, NO/N_2, O_2/N_2 and NO/O_2/N_2 plasmas with dielectric barrier discharge (DBD) at atmospheric pressure .
     本文首先建立了大气压下介质阻挡放电发射光谱测量系统。 利用它对平衡气N_2、NO/N_2、O_2/N2以及NO/O_2/N_2等体系的大气压下介质阻挡放电等离子体进行了诊断,获得了如下结果:
短句来源
     OPTICAL EMISSION SPECTRA OF Fe ̄(3+1)IONS IN LiNbO_3:Fe ̄(3+) CRYSTAL
     LiNbO_3:Fe~(3+1)晶体中Fe~(3+)离子的发射光谱研究
短句来源
     Study of Power Dissipation Mechanism of SiH_4 RF Glow Discharge by Optical Emission Spectroscopy
     SiH_4射频放电功率耗散机制的光发射研究
短句来源
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  光学发射
     A novel experimental technique,called spatial resolved optical emission spectroscopy (OES),has been successfully developed to spatially characterize the argon plasma generated by DC glow discharge and by magnetron assisted,microwave electron-cyclotron-resonance (ECR) discharge.
     光学发射光谱 (OES)方法是等离子体诊断的有力工具之一 ,可以定量地给出等离子体的多种重要参数 ,如等离子体中的物种成分、粒子能态分布、激发温度、粒子相对密度等。 本文介绍了一种用于电子回旋共振 (ECR)微波等离子体磁控溅射靶附近的增强放电和直流辉光放电等离子体空间分辨诊断的发射光谱装置。
短句来源
     Optical emission diagnosis of helicon-wave-plasma-enhanced chemical vapor deposition of nanocrystalline silicon
     螺旋波等离子体化学气相沉积纳米硅薄膜的光学发射谱研究
短句来源
     The optical emission spectroscopy is used to study the time -space behavior of the plasma plume induced by pulsed XeCl laser ablation of carbon target The optical emission spectrum of the plasma is mainly continuous emitting near the target in its early formation stage. The discrete spectra can be detected 20 ns later and reach the maximum at about 60-100 ns.
     采用时空分辨的光学发射谱技术研究了脉冲XeCl准分子激光消融碳靶等离子体的光辐射特性,结果表明等离子体形成初期发光主要为连续辐射,主要出现在激光主脉宽内近靶区,约20ns后出现碎片的线状光谱,诸碎片发光具有不同时间行为。
     The optical emission from the barred spiral galaxy NGC 7528 shows characteristics ofboth Seyfert 2 and starburst galaxies. Propeties near the central region of the Galaxy arestudied with radio and infrared observational data. The result reveals that a violoent starformation activity may exist near the center of NGC 7582, and the star formation rate in theregion is much higher than that of the Galaxy.
     棒旋星系NGC7582的光学发射线显示出它具有Seyfert2和星爆星系的双重特点.本文利用射电和红外观测数据对它中心区附近的性质进行了研究.结果表明NGC7582中心附近可能存在着一个活动性很强的恒星形成区,恒星的形成率比银河系高得多,星爆对这个Seyfert2星系的性质起了重要作用.
短句来源
     Several methods for gas plasma etching endpoint monitoring are described Optical emission spectrometry used in endpoint dynamic monitoring is emphatically discussed.
     本文介绍了气相等离子刻蚀终点监控的几种方法,并着重讨论了光学发射光谱法在终点动态监控中的应用。
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  “optical emission”译为未确定词的双语例句
     The optical emission spectrometry method was studied for the determination of Al, C, Co, Cr, Mn, Mo, Ni, P, S, Si, Ti, V and W in Cr-stainless steel.
     研究了铬不锈钢中Al、C、Co、Cr、Mn、Mo、Ni、P、S、Si、Ti、V、W等 13种元素的直读光谱分析方法。
短句来源
     Malfunction Elimination of Signal Line of PDA-5500Ⅱ Optical Emission Spectrometer
     PDA-5500Ⅱ光谱仪信号线的故障排除
短句来源
     Study on Growth and Optical Emission of a-SiN_x: H Films Prepared by ECR-CVD
     ECR-CVD制备a-SixN:H薄膜及其发光性能的研究
短句来源
     The process of SiH_4 Laser plasma using the technique of temporal Optical Emission Spectroscopy(OES) is studied.
     本工作采用时间分辨的OES技术,研究了TEA CO_2激光诱发SiH_4等离子体过程。
短句来源
     Optical emission spectrum measurement indicates that the intrinsic optical gap of crystalline Cd2SnO4 is about 2.156eV. Analysis of electrical and optical data on Cd2SnO4 films before and after heat treatment leads to a calculated wide optical band gap in the extent of 2.37-2.64eV and effective mass 0.22-0.48 of the free-electron mass.
     光致发光谱的测量表明,晶态CTO膜的本征跃迁能隙约为2.156eV,并由CTO膜的电学和光学测量数据计算出热处理前后的光隙能E_(opt)为2.35eV—2.64eV和传导电子的有效质量m_e~*为0.22m_e—0.5m_e。
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  optical emission
Use of optical emission spectroscopy for determining the number concentration of chlorine atoms in a chlorine-oxygen plasma
      
A phase separator for flow injection (FI) volatile compounds generation combined with inductively coupled plasma optical emission spectrometry (ICP-OES) was developed.
      
Determination of trace impurities in tantalum powder and its compounds by inductively coupled plasma optical emission spectromet
      
Oscillations of optical emission from flare stars and coronal loop diagnostics
      
We provide evidence suggesting that the optical emission source is localized at the loop footpoints.
      
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In this paper, a method is suggested to analyze the photocapacitance transient which may relate to several deep levels, and the photoionization cross sections, energy positions and concentration of deep levels in 1MeV electron-irradiated GaP :N LED have been measured by photocapacitance technique. And the roles of these deep levels in electron-hole recombination are specified.Photocapacitance experiments showed that certain deep levels in GaP are resulted from electron-irradiation, and that the photocapacitance...

In this paper, a method is suggested to analyze the photocapacitance transient which may relate to several deep levels, and the photoionization cross sections, energy positions and concentration of deep levels in 1MeV electron-irradiated GaP :N LED have been measured by photocapacitance technique. And the roles of these deep levels in electron-hole recombination are specified.Photocapacitance experiments showed that certain deep levels in GaP are resulted from electron-irradiation, and that the photocapacitance transient which may include a number of electron or hole emissions from these deep levels is almost always non-exponential. If the electron and hole transitions between deep levels may be neglected, the total transient can be expressed as the sum of the exponential transients corresponding to the deep levels from which electrons or holes are excited to conduction/valence band by light. This equation is written aswhere Ctot(t) and Ctot(∞) are the capacitance of the junction at time t and of steady state respectively, the level index i indicates the level from which electrons or holes are excited by light, △Ci(∞) is the total contribution of the level, i,to the variance of the capacitance of the junction and T,- is the time constant. △Ci(∞) and τi characterize the independent exponential transient of the level, i. By using the Multi-Exponential-Process Dissociation Method, proposed in this paper, both 4Ci(∞)and τi can be obtained from the total photocapacitance transient. Then, the optical emission rates together with photoionization cross sections for these deep levels may be calculated from △Ci(∞) and τi.With the analysis method described above, the steady state photocapacitance measurements and the transient photocapacitance measurements were carried on 1MeV electron-irradiated Gap:N LED at 150K, Three hole levels, H1-H3 (0.51, 0.75, 1.15eV) , and four electron levels, E1- E4 (0.68, 0.84, 0.89, l.OleV) were detected, and the photoionization cross sections, σno and σpo, for these deep levels were determined.The steady-state photocapacitance measurement was also carried on GaP:N LED before electron-irradiation. The results showed that three levels (H2, H3, E4) appear originally in the LED. After electron-irradiation, the concentrations of these three levels were increased by one order.The measured spectral distributions of photoionization cross sections were compared with the theory. In the energy region, Ei≤hv≤Eσmaxo , themeasured spectra fit fairlly well with Lucovsky's model, thus the photoionization energies of these deep levels were determined. In the energy region, hv>Eσmaxo, the fitness of the experimental data to either Lucovsky's model or other theoretical models is poor. This may be resulted from the simplified approximation of the impurity wave-function and from not considering the fine structure of bands in these theoretical models.The external quantum efficiency ηe of GaP:N LED before and after electron-irradiation was measured. After electron-irradiation, ηe was decreased by two orders.The electroluminescent radiation spectrum was measured on electron-irradiated GaP:N LED and the radiation peaks corresponding to the levels (H1-H3, E1-E4) were not observed. These studies revealed that these levels (H1-H3, E1-E4) behave as nonradiative recombination centers.

本文提出含多个深能级响应的光电容瞬态分析方法:在不考虑各能级之间电子、空穴跃迁的条件下,可出“多指数过程分离法”,将总的瞬态过程分离为各能级上指数型瞬态过程之和。运用这一方法,对lMeV(4×101~(15)cm~(-2)电子辐照GaP LED进行了定态和两种注入条件的瞬态光电容测量,观察到H_1、H_2、H_3三个空穴能级(0.51、0.75、1.15eV)和E_1、E_2、E_3、E_4四个电予能级(0.68、0.84、0.89、1.01eV),并得到各能级的光离化截面谱。外量子效率及发射谱测量结果表明;电子辐照引入的深能级(H_1—H_3,E_1—E_4)表现出无辐射复合中心的性质。

Increasing attention has been recently paid to the deep centers in n - V semiconductor alloys since the main electronic properties of these materials vary continuously with their compositions and a large range of compositions can be selected for optimizing their applications such as for luminescence, laser and microelectronic devices. On the other hand, research on the dependence of deep center characteristics on alloy compositions can offer the possibilities to gain the important information about the centers...

Increasing attention has been recently paid to the deep centers in n - V semiconductor alloys since the main electronic properties of these materials vary continuously with their compositions and a large range of compositions can be selected for optimizing their applications such as for luminescence, laser and microelectronic devices. On the other hand, research on the dependence of deep center characteristics on alloy compositions can offer the possibilities to gain the important information about the centers from the point of view of defect physics.In this paper we report the measurement results for the nonexponential thermal transient capacitance and DLTS spectra in Fe-doped GaAsP alloy for large range of compositions.Samples used in this study were p+ n diode, n- type, GaAsP layers were grown on substrates of GaAs(for x<0.5) and GaP(for x>0.5) using MOVPE. The p+ layers were obtained by Zn diffusion, iron impurities were also diffused into samples and their concentrations were selected in the range of NFe/ND-0.05. The composition x of each samples studied was measured by microprobe analysis in a scanning electron microscope with uncertainty less than ±2%.We have fitted the experimental curves with the model of deep level broadening caused by the alloy disorder effect and following results were obtained: (1) The thermal emission rates of holes for central level after broadening and their temperature dependence ep0t(T), (2) The Gaussian level broadening widths. From Arrhenius plot of "ep0t/T2-1/T", the thermal enthalpy changes and their composition dependence △Hp(x) druing hole transitions were determined.It is found that △Hp(x) are distinctly different from the Gibbs free energy changes △Gp(x) obtained by the potocapacitance transient method. Values of △Hp(x) decrease at first and then increase with increasing compositions (see Fig.6). The relation of broadening widths with compositions B(x) is consist-ent with theoretical prediction of for a Gaussian level distribution (see Fig.5)By calculating the entropy changes during hole transitions △Sp(x), it is shown, for x = 0 and x = l, the acceptor states of Fe-center are antibonding, but for 0optical emission rate are different. They represent the enthalpy changes and Gibbs free energy changes respectively and can be affected by bonding state of Fe-center as well as by lattice relaxation.

对不同组分的掺FeⅢ-Ⅴ族混晶GaAs_(1-x)P_x,测量了Fe深受主中心空穴热发射的非指数恒温暗电容瞬态及DLTS谱。用混晶无序使Fe深能级展宽的模型理论拟合实验结果,得到Fe能级Gauss型展宽的半宽和中心能级的热发射率,并确定出基态空穴跃迁的中心能级的焓变与组分的关系:先是减少,而后增大,与由光电容方法得到的Gibbs自由能变量与组分x的关系明显不同。 进一步讨论表明,上述两种测量方法得到的Fe中心的激活能不同,可能反映Fe中心的键合状态和混晶无序诱导的品格弛豫的影响。

The reration between the process condition and optical emissior, intensity in plasma etching has been analysed.And the influence of gas flow, RF power, load, film uniformity and trace water on optical emission intensity has been diseussed.

本文介绍了气体流量、射频功率、负载大小、薄膜的均匀性及系统中存在的水汽等工艺条件等离子体发射光谱的光发射强度的影响及其实验结果。

 
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