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silicon circuit
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  硅电路
     Diam ond film w as used as buried insulator in silicon on diam ond ( S O D) technology. 54 H C T03 C M O S/ S O D integrated circuit w as fabricated by using S O D w afer. The recovery character istics of the S O D circuit under radiation w ere studied, and the results show that the recovery ability ofthe S O D circuit is clearly higher than that of bulk silicon circuit.
     以金刚石膜作为绝缘埋层, 利用金刚石膜上的薄层硅( S O D)技术, 制作 54 H C T03 C M O S/ S O D 结构的集成电路. 对该电路在辐照后的恢复特性进行研究. 结果表明, S O D 电路在大剂量辐照后的恢复能力明显强于体硅电路
短句来源
     Diamond film with high resistivity and thermal conductivity is used as buried insulator in SOD (silicon on diamond) technology. 54HCT03 CMOS/SOD integrated circuit is fabricated by using SOD wafer. The high temperature characteristics of SOD circuit are studied, and the results show that the SOD circuit can be used at the temperature of 350℃, this working temperature is clearly higher than that of the bulk silicon circuit.
     采用具有高导热、高绝缘等优异物理性能的金刚石膜作为绝缘理层,利用金刚石膜上的薄层硅(SOD)技术,制作了54HCTO3CMOS/SOD结构的集成电路.对该电路高温下的工作特性进行了研究.结果表明SOD电路在350℃下仍具有正常的逻辑功能,其工作温度明显高于体硅电路
短句来源
     The test results show that the operating frequency of the 1.2 micron SOI CMOS circuit is 3 times than that of the bulk silicon circuit . The static power dissipation is only 10 percent and the propagation delay per-stage of 101-stage ring oscillators is 20 percent of the bulk silicon ones. A device with high-speed and low-power dissipation was achieved.
     测试结果表明:与同类体硅电路相比,工作频率提高三倍,静态功耗仅为体硅电路的10%,且电路的101级环振总延迟时间也仅为体硅电路的20%,实现了电路对高速低功耗的要求。
短句来源
  “silicon circuit”译为未确定词的双语例句
     The system consists of the PC104, sensor circuit, the change-send circuit, the cntrollable silicon circuit, the functional package of the PID software and the functional package of the non-linear emendation software, possessing the function of real-time control and automatic temperature modulation.
     该系统由PC104、传感电路、变送器电路、可控硅控制电路及PID软件功能包和非线性校正软件功能包组成,具有实时监控和自动调整温度等功能。
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  相似匹配句对
     The improvement of silicon-controlled trigger circuit
     可控硅触发电路的改进
短句来源
     The Design of Amplification Circuit of Silicon Photodetector
     硅光伏探测器放大电路设计
短句来源
     On the Dynamic Circuit
     动态电路分析的几个问题
短句来源
     Nutrition of silicon
     硅营养
短句来源
     Microrelay and Silicon
     微型继电器与硅材料
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  silicon circuit
A silicon circuit prototype, including the modulator itself, a current reference, and the clock signals generator, was designed to operate with a 1.8-V supply, fabricated and tested.
      
Consistent nucleation, required to assure proper heat transfer of silicon circuit chips, does not occur on polished silicon surfaces.
      
The starting substrate for the spring process could be an active silicon circuit wafer from a foundry.
      
The team demonstrated qubit operation of a silicon circuit made using standard fabrication techniques.
      


Diamond film with high resistivity and thermal conductivity is used as buried insulator in SOD (silicon on diamond) technology. 54HCT03 CMOS/SOD integrated circuit is fabricated by using SOD wafer. The high temperature characteristics of SOD circuit are studied, and the results show that the SOD circuit can be used at the temperature of 350℃, this working temperature is clearly higher than that of the bulk silicon circuit.

采用具有高导热、高绝缘等优异物理性能的金刚石膜作为绝缘理层,利用金刚石膜上的薄层硅(SOD)技术,制作了54HCTO3CMOS/SOD结构的集成电路.对该电路高温下的工作特性进行了研究.结果表明SOD电路在350℃下仍具有正常的逻辑功能,其工作温度明显高于体硅电路。

Ordinary bulk silicon circuits can work only below 200℃. ButSOI circuits can work in the higher temperature.In this paper,the market's demande for high temperature circuits is breifly described and the characteristics of SOI circuits in high temperature are analyzed.The technical problems which must be solved for commercializing the SOI circuits are also discussed.

常规的体硅基础电路通常只能工作在200℃以下,SOI(Silicon-On-In-sulator)电路的突出特点之一是可以工作在高温环境。简述了市场对高温电路的需求,并分析了SOI电路在高温下的电学特性,讨论了为将SOI高温电路商业化,应当解决的一些技术问题。

Diam ond film w as used as buried insulator in silicon on diam ond ( S O D) technology.54 H C T03 C M O S/ S O D integrated circuit w as fabricated by using S O D w afer. The recovery character istics of the S O D circuit under radiation w ere studied, and the results show that the recovery ability ofthe S O D circuit is clearly higher than that of bulk silicon circuit. Annealing technique is advandageousto the quick recovery of the radiated S O D circuit.

以金刚石膜作为绝缘埋层, 利用金刚石膜上的薄层硅( S O D)技术, 制作 54 H C T03 C M O S/ S O D 结构的集成电路. 对该电路在辐照后的恢复特性进行研究. 结果表明, S O D 电路在大剂量辐照后的恢复能力明显强于体硅电路; 常规非辐照环境下的高温退火工艺更有利于辐照后的 S O D 电路的快速恢复

 
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