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the band edge
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  带边
     UV-vis diffuse reflectance spectra showed that the absorption of TiO2-S-Fe in the visible light district was strengthened and the band edge moved to longer wavelength obviously.
     UV-vis漫反射表明,TiO2-S-Fe对可见光吸收增强,吸收带边明显红移;
短句来源
     All these characteristics depend not only on the relative position δ of the excited level ω _1 with respect to the band-edge ω _c but also on the photon density of states ρ(ω_k) (or the band-edge smoothing parameter ε ) near the band edge.
     这些性质不仅依赖于原子的激发态能级ω1与光子频率能带边缘ωc 的相对位置δ,同时也依赖于光子晶体中带边缘的光子态密度 ρ(ωk) (或带边光滑参数ε)。
短句来源
     Both (10 11) and (11 20) peaks of the X ray diffraction (XRD) spectra and the relevant yellow luminescence (YL) of the photoluminescence (PL) spectrum as well as the impurity states close to the band edge were respectively observed upon lowing the N 2 flow rate.
     当载气流量较小时 ,样品的 X射线衍射谱 (XRD)中出现了杂峰(1 0 -1 1 )和 (1 1 -2 0 ) ,相应的光致发光谱 (PL)中出现了黄带 (YL) ,靠近带边有杂质态。
短句来源
     The sulfated TiO\-2 (SO\+\{2-\}\-4/TiO\-2) possessed higher specific surface area, and the band gap of them increased and the band edge blue_shifted,thus yielding a larger redox potential and leading to the enhanced photocatalytic oxidation activity.
     结果表明 ,SO2 -4 /TiO2 在高温下相结构稳定 ,TiO2 的超强酸化可增大比表面积 ,有利于反应物吸附 ,同时产生吸收带边蓝移及禁带宽度增加 ,从而 ,产生较大的氧化还原势 ,与TiO2 相比 ,光催化氧化活性显著提高 .
短句来源
     The resonator exhibited a very high Q value about 30000 at 77 K. The filter showed an excellent selectivity. At the band edge of the filter, the slope was about 17 dB/MHz.
     在77K时,它具有很高的品质因子,约为30000.测试结果表明,该滤波器具有很好的选择性,带边陡度为17dB/MHz,带外抑制优于-90dB.
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  “the band edge”译为未确定词的双语例句
     Pseudopotential Calculation of the Band Edge Structures of the Type Ⅱ InAs/GaSb(001) Superlattices
     第二类InAs/GaSb(001)半导体超晶格能带边结构的赝势计算
短句来源
     In order to understand the band edge discontinuities at a-Si:H/c-Si interfaces, we also investigated the voltage- and temperature-dependent spectral response (SR) of solar cells with a fixed thickness (100 nm) of i-a-Si:H layer, and compared with the experimental results reported by S. Gall et al.
     为了解a-Si/c-Si界面的能带补偿,我们还就固定本征层厚度的HIT结构的光谱响应的电压和温度依赖关系进行了计算并同Gall S等报道的试验结果也进行了比较。
     The spectral properties of nanocrystallines Dy 0.5 Sr 0.5 CoO 3- Y were studied. The results show that the band edge of emission spectra is blue shift when the size of particles decrease to nanometer.
     研究了纳米晶Dy0 5 Sr0 5 CoO3 Y 的光谱特性 ,结果表明 :当晶粒尺寸减小至纳米量级时 ,发射光谱的激子峰波长蓝移 ;
短句来源
     Spontaneous emission can be suppressed significantly due to the combinational influences of the interference effect and the band edge effect.
     由于原子不同跃迁通道间的量子干涉和光子晶体能带带边的作用,自发发射被显著地抑制了。
短句来源
     Due to the low-frequency of applied field, the various transition pathways may interfere with each other and the band edge effect exists, Spontaneous emission can be suppressed significantly.
     这些跃迁导致了自发辐射的量子干涉,再加上光子晶体能带带边的作用,自发辐射被显著抑制。
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  相似匹配句对
     Edge
     边缘
短句来源
     band edge absorbing affects wavelength.
     以及带边吸收的影响.
短句来源
     ON THE EDGE OF ART
     在艺术的边缘玩艺术
短句来源
     From the Center to the Edge
     从“中心”走向“边缘”——论王蒙文学观念的转变
短句来源
     Edge & Sculpture
     “边缘”的雕塑和雕塑的“边缘”——遭遇“双年展”
短句来源
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  the band edge
Absorption of Narrow-Gap HgCdTe Near the Band Edge Including Nonparabolicity and the Urbach Tail
      
The room-temperature photoluminescence (PL) of the as-deposited films has been shown that growing in the O2/Ar/H2 mixture ambient significantly increases the band edge emission while inhibiting the visible emission.
      
These calculations can be corrected for thermal excitation by adding a factor, m**, to the band edge calculation: m* = m** m*be, where m** was found empirically to be m** = 4.52 × 10-3T + 0.78.
      
The intensity of the band edge emission is comparable to that of the acceptor related emission for layers grown at 465°C.
      
GaBN alloys with about 7% substitutional boron were also produced by implantation of 5 × 1016 cm-2 B ions at 60 keV into GaN, as evidenced by the shift of the band edge emission in cathodoluminescence spectra from 3.4 eV for GaN to 3.85 eV for GaBN.
      
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This paper introduces a direct display method for measuring MOS interface state density distribution. Instead of using the u-sual digital calculation, this method has recourse to analog circuit operations. Its measurement is based on high-frequency C-V and quasi-static C-V method. The effective measurement ranges from 1010 to 1013 V-1 cm-2. Compared with digital calculations, this method can achieve greater accuracy near the midgap; however, the error is comparatively great when it comes to the band edge....

This paper introduces a direct display method for measuring MOS interface state density distribution. Instead of using the u-sual digital calculation, this method has recourse to analog circuit operations. Its measurement is based on high-frequency C-V and quasi-static C-V method. The effective measurement ranges from 1010 to 1013 V-1 cm-2. Compared with digital calculations, this method can achieve greater accuracy near the midgap; however, the error is comparatively great when it comes to the band edge. By using this method, it takes only 20 minutes to make a Nss-ψs distributron curve of a MOS sample or to make comparisons between interface state density distributions of several M OS samples treated under different conditions.

本文介绍的测量MOS界面态密度分布的方法,是用模拟电路的运算代替通常的数值计算的方法.它的测量原理建立在高频c—v法和准静态c—v法的基础上,测量有效范围为10~(10)—10~(13)v~(-1)cm~(-2).与数值计算方法得到的结果比较,本法在靠近禁带中心处较为准确,而在靠近禁带边缘的地方出现较大的误差.本法可在20分钟内得出一个MOS样品的Nss~Ψ_s分布曲线或比较经过不同条件处理的几个MOS样品的界面态密度分布.

A systematic investigation and numerical results of calculation of T2 symmetric deep level wave function induced by short range defect potential in Si are described, based on a recently developement on site defect potential Green's function method. [5,6] Such a complete information of T2 symmetric wave functions in Si is presented for the first time. The occupation probability P1 of the wave function located around four nearest neighbour sites of the defect center has a peak exceeding 50%. This part of wave...

A systematic investigation and numerical results of calculation of T2 symmetric deep level wave function induced by short range defect potential in Si are described, based on a recently developement on site defect potential Green's function method. [5,6] Such a complete information of T2 symmetric wave functions in Si is presented for the first time. The occupation probability P1 of the wave function located around four nearest neighbour sites of the defect center has a peak exceeding 50%. This part of wave function could be described by T2 symmetric combination of four hybrid orbital quasi dangling bonds located at four nearest neighbour sites and pointing toward the defect center. The total occupation probability of wave function located on the 0,1,2 shells arround the defect center is about 70%. The rest part of the wave function extends diversely over a wide range of space. The characteristics of the wave function are insensitive to the defect energy over most part of the energy range in the gap. Only when the defect energy level approaches very closely to the band edge of either conduction (Ec) or valence (Ev) band, the aforementioned peak P1 disappears and the wave function extends smoothly all over the space. A T2 symmetric deep level due to ideal vacancy is found at 0.51 eV up to the Ev .

木文在文献[5,6]所发展的在位缺陷势格林函数方法基础上,进一步讨论Si中短程缺陷势引入的T_2对称深能级波函数性质。第一次给出了Si禁带中部很宽能量范围之内T_2对称波函数的完整数据。波函数在缺陷最近邻四个格点的占据几率P_1有一高达50%以上峰值。该部分相当于四个最近邻格点指向缺陷的杂化轨道准悬键的T_2组合。第0,1,2三个格点壳层波函数占据几率之和约为70%。波函数其余部分较平缓地分布在一相当大空间。波函数的以上特征与禁带中部能量位置关系不灵敏。但在靠近导带E_c和满带E_v的浅能量区,以上P_1峰趋于消失,整个波函数在空间的分布趋于平坦。Si空位在禁带引入一个T_2对称深能级,位于E_v以上0.51eV处。

The behavior of deep level wavefunctions induced by short range defect potential is investigated when the energy difference e between the defect state and the band edge is very small. When e→0, the wavefunctions tend to expand in real space and concentrate in k space when some symmetric matching condition is satisfied. A specific scheme is developed for efficient and reliable numerical calculations of the deep level wavefunctions when e is very small. For the case of A1 symmetric defect states near the...

The behavior of deep level wavefunctions induced by short range defect potential is investigated when the energy difference e between the defect state and the band edge is very small. When e→0, the wavefunctions tend to expand in real space and concentrate in k space when some symmetric matching condition is satisfied. A specific scheme is developed for efficient and reliable numerical calculations of the deep level wavefunctions when e is very small. For the case of A1 symmetric defect states near the bottom of the conduction band, for Si, when e <2 meV, the wavefunctions tend to concentrate rapidly in k space; for GaAs, the wavefunctio'ns do not concentrate in k space until e is as small as 0.1 meV. The critical e value corresponding to obvious concentration in k space is sensitive to the magnitude of the effective mass and the degree of matching of symmetry between the defect state and Bloch states at the band edge. For A1 defect states near the top of the valance band, no concentration in k space occur since the A1 defect states mismatch to the Block states at valance band maxima.

本文对短程缺陷势深能级在能量趋向禁带边缘时波函数的行为作了研究。当深能级能量与禁带边能量差ε很小时,在一定的能量和对称性条件满足下,波函数在k空间向极值收缩而在实空间扩展。本文发展了一种方法可有效地用于ε很小时的波函数数值计算。对于靠近导带的A_1态波函数,对于出Si,当ε小于2meV时,开始显著地在k空间收缩;对于GaAs,直至ε=0.1meV还未发生显著收缩。发生显著收缩对应的ε值与有效质量以及缺陷态和能带边波函数对称性匹配度有灵敏的关系。对于靠近价带顶的A_1态,由于与价带顶对称性不匹配,不发生k空间收缩现象。

 
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