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semiconductor metal
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  “semiconductor metal”译为未确定词的双语例句
     The Research on Semiconductor Metal Oxides Nanomaterial for NO_2 Gas Sensors
     金属氧化物半导体纳米材料NO_2传感器研究
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     The structure of the detector is made of metal semiconductor metal. Major geometric dimension of these detector are:the length of the strip is 17mm,and the width of them are of 20,50,100,200,300μm,respectively.
     该探测器结构采用金属 -半导体 -金属结构 ,其主要几何尺寸是 :微条长度为 17mm ,宽度分别为 2 0、5 0、10 0、2 0 0、30 0μm .
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     By using transmission line matrix method, the simulation and analysis for frequency response of interdigital capacitors in metal semiconductor metal photodetector is described.
     介绍了利用传输线矩阵方法模拟和分析金属 -半导体 -金属光电探测器指栅电容的频率响应。
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     Doping of Y on La sites makes the semiconductor metal transitions move toward lower temperature regin and the peak resistance near the transition temperature greatly increases.
     随La位上Y掺杂含量的增加,峰值电阻温度向低温方向移动,并且转变温度附近的峰值电阻大大增加。
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     This paper presents the semiconductor overlayer thickness effects on the interfacial energy of semiconductor metal interfaces by using a Green's function method based on the tight-bonding approximation. The results studied show that a maximum value of the interfacial energy between ZnO and W oc-cures at 6 ZnO single layers, so that there is a steadly combing point for the ZnO-W system, and that it doesn't for the ZnO-Pt system.
     用紧束缚近似下的格林函数方法研究半导体-金属体系的界面能随半导体薄层厚度的变化关系,结果发现:ZnO薄层与W衬底构成界面时,若ZnO为6个单层,界面能最大,结合稳定;
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     PREPARATION OF METAL AND SEMICONDUCTOR NANOPARTICLES FILM
     金属和半导体纳米微粒薄膜的制备
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     SYNTHESIS OF METAL SULFIDE SEMICONDUCTOR NANOPARTICLES
     半导体硫化物纳米微粒的制备
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     TIMES OF THE METAL
     金属时代
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     Metal Colouring
     金属着色
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     Semiconductor Photodetector
     半导体光电探测器
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  semiconductor metal
Negative differential resistance and switching properties of metal-dielectric-semiconductor (metal) structures
      
An MBE grown InGaAs metal semiconductor metal (MSM) photodiode (PD) with an InAlAs barrier enhancement layer is reported that has very low dark current and high speed characteristics.
      
Large area InAlAs/InGaAs metal semiconductor metal photodiode with very low dark current and its frequency response
      
Effect of the Interface Resistance on the Extraordinary Magnetoresistance of Semiconductor/Metal Hybrid Structures
      
The present article reviews our latest studies directed to improving gas sensing properties of semiconductor metal oxides, SnO2 and TiO2, by controlling their porous structure in the range of nano- to micro-meter size.
      
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Rare-earth compounds semiconductors are composed. of the rare-earth metals with the elements of group Ⅴ andⅥ. It is shown that many of them are hopeful thermoelectrical materials at high temperatures; ScN is expected to be a semiconductor with high mobility for either N or P type; SmS and its solid solutions may be used for light data storage. The band atructures, electrical characteristics and materials preparation, as well as the semiconductor-metal transformation in SmS are briefly...

Rare-earth compounds semiconductors are composed. of the rare-earth metals with the elements of group Ⅴ andⅥ. It is shown that many of them are hopeful thermoelectrical materials at high temperatures; ScN is expected to be a semiconductor with high mobility for either N or P type; SmS and its solid solutions may be used for light data storage. The band atructures, electrical characteristics and materials preparation, as well as the semiconductor-metal transformation in SmS are briefly reviewed in this paper.

稀土金属与周期表中Ⅴ族、Ⅵ族元素所形成的一系列化合物,大多具有半导体特性。称为稀土化合物半导体,简称稀土半导体。研究表明,其中许多是有希望的高温热电材料,ScN可望为高迁移率的N型和P型半导体,SmS及其固溶体可望用作光数据存储器。本文对稀土半导体的能带结构、电学特性和材料制备,以及SmS中的半导体—金属转变作了简述。

This paper presents the semiconductor overlayer thickness effects on the interfacial energy of semiconductor metal interfaces by using a Green's function method based on the tight-bonding approximation. The results studied show that a maximum value of the interfacial energy between ZnO and W oc-cures at 6 ZnO single layers, so that there is a steadly combing point for the ZnO-W system, and that it doesn't for the ZnO-Pt system. A possible explanation for these phenomena is given in terms of the charge-transfer...

This paper presents the semiconductor overlayer thickness effects on the interfacial energy of semiconductor metal interfaces by using a Green's function method based on the tight-bonding approximation. The results studied show that a maximum value of the interfacial energy between ZnO and W oc-cures at 6 ZnO single layers, so that there is a steadly combing point for the ZnO-W system, and that it doesn't for the ZnO-Pt system. A possible explanation for these phenomena is given in terms of the charge-transfer mechanism. The variation of the interfacial energy with the coupling strength between semiconductors and metals is also investigated.

用紧束缚近似下的格林函数方法研究半导体-金属体系的界面能随半导体薄层厚度的变化关系,结果发现:ZnO薄层与W衬底构成界面时,若ZnO为6个单层,界面能最大,结合稳定;且ZnO与Pt构成的界面没有稳定点。对此现象,本文从电荷转移的角度作了唯象解释。同时还研究了界面能随耦合强度的变化规律。

GaAs interdigital Metal-Semiconductor-Metal photo - detectors have been fabricated on MBE grown wafer and ion implanted wafer, their characteristics have been compared. Results show that the IMSM - PD fabricated on MBE wafer have better characteristics, with its dark current less than InA at 5V bias. The IMSM-PD have been monolithically integrated with MESFET amplifier as photoreceivers.

采用S.I.GaAs衬底上MBE生长的两层结构外延材料制作了IMSM-PD并与采用离子注入材料制作的IMSM-PD的特性进行了比较,结果表明采用MBE材料的器件特性较优,在5V偏置电压下暗电流小于1nA。已将IMSM-PD与MESFET放大电路进行了单片集成构成光接收器。

 
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