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金刚石膜生长
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  diamond film growth
     Effect of ethanol on diamond film growth
     乙醇对金刚石膜生长特性的影响
     Diamond films were deposited with hot cathode DC\|PCVD method in this paper. The methanol addition influences on discharge state and diamond film growth characteristics were studied.
     采用热阴极 DC-PCVD方法制备了金刚石膜 ,研究了甲醇对放电状态和金刚石膜生长特性的影响 .
短句来源
  diamond growth
     Computer Programming Controlled CVD Diamond Growth System and Application
     计算机编程控制CVD金刚石膜生长系统的研制与应用
短句来源
     It has been observed that the optimum surface coverage is 0.86 monolayer (ML)for { 111} oriented surface , and 0. 80 ML for {100} oriented surface for diamond growth, and it may be the maximum growth rate at a definite concentration of hydrocarbon fragments at the surface.
     对表面悬挂键的微观分布状态的统计计算结果表明,(111)和(100)生长表面的氢原子覆盖率分别为0.86单层(ML)和0.80ML时,单位表面积上的单个悬挂键团密度最高,金刚石的生长速率为最大极值。 对于同时显露(111)和(100)面的多晶金刚石膜生长表面,则表面的氢原子最佳覆盖率应为0.83ML。
短句来源
     Chemical environment over the substrate surface during diamond growth were calculated, and was compared with experiment data from optical emission spectrum obtained at similar conditions. It was found that the CH radical may be main active precursor responsible for diamond growth. The overall uniform distribution of CH radical is important for large area deposition of diamond films.
     建立了直流电弧等离子体喷射CVD大面积金刚石沉积数学模型.对衬底上方等离子 体中的化学环境进行了模拟计算,并与在相同条件下对等离子体的光谱结果进行对比,发现计 算结果与实验结果基本上吻合.在模拟条件下CH基团可能是促使金刚石生长的主要活化基 因.模拟结果显示CH基因沿径向的均匀分布对大面积金刚石膜生长有较大的意义.
短句来源
  “金刚石膜生长”译为未确定词的双语例句
     Optimization for Growth of CVD Diamond on Al_2O_3 and Response to Alpha Particle Irradiation
     Al_2O_3陶瓷上金刚石膜生长工艺优化及α粒子响应
短句来源
     Growth of Heteroepitaxial Diamond Films on Si(100) and Its Applications
     Si(100)上异质外延金刚石膜生长及其应用研究
短句来源
     SIMS showed that C13is enriched in the film growing process.
     SIMS分析结果还表明同位素C13在金刚石膜生长过程中富集。
短句来源
     RAMAN ANALYSIS ON GROWTH PROCESS OF CVD DIAMOND FILMS
     CVD金刚石膜生长过程的Raman分析
短句来源
     The result indicates that with moderate addition of H_(2)O to CH_(4)-H_(2) feed gas,which is safe and low-priced, the quality and the uniformity of the deposited diamond film were remarkably improved.
     研究结果表明,在反应气体CH4/H2中添加适量H2O能降低金刚石膜中非金刚石碳的含量,提高金刚石膜厚度的均匀性,并对反应气体中添加H2O对CVD金刚石膜生长影响机理进行了阐述。
短句来源
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  相似匹配句对
     TECHNOLOGY FOR DIAMOND FILMS GROWTH
     金刚石簿生长技术
短句来源
     Chemical Vapor Deposition of Diamond Film
     化学气相沉积金刚石
短句来源
     The Effects of Acetone on the Growth Rate of Diamond Films
     丙酮对金刚石生长速率的影响
短句来源
     RAMAN ANALYSIS ON GROWTH PROCESS OF CVD DIAMOND FILMS
     CVD金刚石生长过程的Raman分析
短句来源
     EACVD Apparatus for Large Area Diamond Film
     大面积均匀的金刚石生长装置
短句来源
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  diamond film growth
The preetching of the Ti substrate produces the titanium hydride layer that can affect the boron-doped diamond film growth significantly.
      
Novel technique for hetero-epitaxial diamond film growth on cubic boron nitride from iron carbide at high temperature and high p
      
Study of nanocrystalline diamond film growth in rf hybrid laser deposition systems in O2, H2 and H2+Ar ambients
      
The model produced a reasonable estimate for the bulk diamond film growth rate.
      
This short review summarizes basic knowledge about the diamond film growth.
      
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  diamond growth
We determined the fields of carbon solutions in pyrrhotite melt showing labile and metastable oversaturation with respect to diamond, which correspond to the spontaneous nucleation of the diamond phase and diamond growth on seeds, respectively.
      
The results obtained make it possible to estimate the temperature and duration of natural diamond growth.
      
A projective ternary phase diagram of stationary non-equilibrium states for low-pressure diamond growth
      
Not all of these seeds however are prone to diamond growth as they can be either dissolved or carburized.
      
Metastable diamond growth in the laboratory is well established and its occurrence in natural systems is proposed.
      
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The diamond thin films have been synthesized on St,Ge, Cu, Mo, WC and graphite substrates with thermal CVD from mixture gaseous of CH4, and H2, and polycrystalline diamond films with an area of more than 20 X 20 mm2, and growth features of diamond thin film is studied.

本文采用热解化学气相沉积方法,以甲烷和氢的混合气体为原料,在单晶硅和锗、 铜、钼、石英玻璃、碳化钨和石墨基板上合成金刚石薄膜,而且在单晶硅基板上合成出其面积大于20×20mm2的比较均匀的金刚石膜,同时对金刚石膜的生长特性进行了研 究。

High quality diamond films have been rapidly synthesised by the DC arc discharge plasma CVD in a hydrogen-methane mixture gas. The properties of the films are tested and analyzed by scanning electron microscopy, X-ray diffraction and Raman spectra. In order to find out the growth mechanism of vapor deposited diamond, in situ optical emission spectra of plasma under practical growth conditions are measured. It is found that the key factor of rapid growth diamond film is the presence of a large number of atomic...

High quality diamond films have been rapidly synthesised by the DC arc discharge plasma CVD in a hydrogen-methane mixture gas. The properties of the films are tested and analyzed by scanning electron microscopy, X-ray diffraction and Raman spectra. In order to find out the growth mechanism of vapor deposited diamond, in situ optical emission spectra of plasma under practical growth conditions are measured. It is found that the key factor of rapid growth diamond film is the presence of a large number of atomic hydrogen in the plasma.

应用直流弧光放电分解CH_4和H_2混合气体成功地实现了高速生长多晶金刚石膜,应用扫描电子显微镜、X射线衍射仪、Raman谱仪对所得样品进行检测和分析,为了弄清楚金刚石膜的生长机理,在实际生长环境下“原位”测量了不同条件下直流弧光等离子体的光发射谱,结果发现:高速生长金刚石膜的关键是该气相反应中有大量的原子H存在。

The influence of the microparameter on the nucleation and growth process have been studied in the diamond film formed by the.microwave plasma chemical vapor deposition(CVD).The higher concentration of.. hydrocarbon and lower substrate temperature is not suitable for the growth diamond films. When different deposition conditions were used in the two successive steps-the nucleation and the growth,the good-quality diamond films have been grown.

本文研究了微波等离子体化学气相沉积制备金刚石薄膜的宏观控制参量对成核和生 长过程的影响.过高的碳源浓度、低的衬底温度不利于金刚石膜的生长.在金刚石膜的 成核和生长期采用不同的条件,生长出晶形较好的金刚石薄膜。

 
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