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further optimal process
相关语句
  进一步优化工艺
     For further optimal process,a single GaInP etch stop layer with 30~50 nm thickness,which was inserted in the vertical structure of normal quantum well material,was verified.
     为了进一步优化工艺 ,在普通的单量子阱材料横向结构中嵌入了 30~ 5 0 nm的 Ga In P蚀刻阻挡层。
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  相似匹配句对
     Further Discuss on Optimal Solutions of Transportation Problem
     关于运输问题最优解的进一步讨论
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     Further Discussion of Optimal Criterion for Universal Ridge Estimates
     对泛岭估计的最优准则的进一步讨论
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     It is the optimal pattern.
     这个结果如同自然界生态平衡一样,是相对最优的格局。
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     Optimal temperature for D.
     各种光强下的暗呼吸速率均随温度升高而增大。
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     Further Discussion on C.R.
     对使用C.R衡量互反矩阵一致性的统计解释及探讨
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nm GaInP/AlGaInP compressively strained SQW ridge waveguide laser diode was reported here.For further optimal process,a single GaInP etch stop layer with 30~50 nm thickness,which was inserted in the vertical structure of normal quantum well material,was verified.And the threshold current density of laser diode with cavity length of 1 200 μm and oxide stripe width of 64 μm,which was made of above material,was measured as 340 A/cm 2.The selective wet etching of GaInP/AlGaInP was experimentally researched...

nm GaInP/AlGaInP compressively strained SQW ridge waveguide laser diode was reported here.For further optimal process,a single GaInP etch stop layer with 30~50 nm thickness,which was inserted in the vertical structure of normal quantum well material,was verified.And the threshold current density of laser diode with cavity length of 1 200 μm and oxide stripe width of 64 μm,which was made of above material,was measured as 340 A/cm 2.The selective wet etching of GaInP/AlGaInP was experimentally researched with solution of HCl,ratio of 1.0∶2.5,and good results were got.

本文制做了 6 70 nm Ga In P/ Al Ga In P应变层单量子阱脊形波导激光器。为了进一步优化工艺 ,在普通的单量子阱材料横向结构中嵌入了 30~ 5 0 nm的 Ga In P蚀刻阻挡层。用此种材料加工而成的腔长12 0 0 μm、宽 6 4μm的氧化条激光器的阈值电流密度为 340 A/ cm2。采用配比为 1.0∶ 2 .5的 HCl∶H2 O溶液对 Ga In P/ Al Ga In P进行湿蚀刻研究 ,得到了较好的选择蚀刻性结果

 
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