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a critical issue
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  一个重要问题
     It becomes a critical issue of how to build a set of SM system and use a series SM methods to assure high efficient and economic operation of enterprise.
     针对改革后的新形势,如何构建出一套切实有效的安全管理体制和采用合适的安全管理方法保证企业高效经济运行,是当前亟需解决的一个重要问题
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     A critical issue for designing Multi agent system lies in how autonomy of the agents corresponding to a specified application is embodied, current methods in this field pay less attention to this problem.
     设计多主体系统的一个重要问题是如何体现出 agent针对具体应用的自主性 ,现有设计方法对其讨论较少 .
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     How to effectively and easily use various data accumulated by oil production plants for a long time is a critical issue of hydrocabon reservoir study by data processing experts.
     如何有效方便地利用采油厂长期积累的各类数据资料,是石油数据处理专家们研究油气藏的一个重要问题
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     A critical issue for complex software architecture design is the modeling and analysis of connectors.
     连接器的建模与分析是复杂软件体系结构设计的一个重要问题.
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  “a critical issue”译为未确定词的双语例句
     Conclusion: The extent of tumor regression induced by neoadjuvant chemotherapy is a critical issue for successful therapeutic approach in patients with stage ⅢA NSCLC.
     结论由新辅助化疗诱导的肿瘤组织反应程度是ⅢA期NSCLC患者获成功治疗的关键因素。
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     The issue of talents is a critical issue to the development of the society.
     人才问题是关系社会发展的关键问题。
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     The thermal stability in SI-GaAs substrates is a critical issue in the fabrication of GaAs field effect transistors and integrated circuits by direct Ion implantation.
     SI-GaAs衬底材科的热稳定性对于用直接离子注入工艺制作GaAs场效应器件及集成电路是至关重要的.
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     Security is a critical issue for potential application of mobile ad hoc networks.
     安全性是Ad Hoc网络潜能是否能够充分发挥的关键所在。
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     The multiple hoist schedule problem is a critical issue in the design and control of many manufacturing processes.
     多 Hoist调度在许多制造过程的设计与控制中是一个关键问题 .
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  相似匹配句对
     a critical theorist;
     批判理论家 ;
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     (a, b, k)-Critical Graphs
     (a,b,k)-临界图(英)
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     The issue of talents is a critical issue to the development of the society.
     人才问题是关系社会发展的关键问题。
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     The security of a data warehouse is the most critical issue.
     数据仓库的安全性是一个非常重要的问题。
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     On X'-critical Graph
     边色数临界图
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  a critical issue
In wireless sensor networks, data fusion (in-network processing) is a critical issue because sensor networks are energy-constrained and bandwidth-constrained.
      
Energy saving is a critical issue for MANET since most mobile hosts will operate on battery powers.
      
How to reach consensus in setting payment standards among different specialties with different agendas has become a critical issue.
      
A critical issue is how to define parameter values for realistic and idealized simulation.
      
The silicon die (chip) and the copper leadframe in IC packaging are bonded by a die attach adhesive, and the quality of the interface is a critical issue in the reliability of IC packaging as well as during the manufacturing process.
      
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In this paper We present the simulation of the acceleration of a 1.5MV high-current electron beam in a diode and the following transport process using a electron trajectory progiam(SLAlC-226).The design of high brightness diodes is a critical issue in high efficiency FELs.The purporc of this work is to find an optimal diode configuration and to devdopan effective method of numerical simulstion .The program is specifically written to compute trajectories of electrons in an electrostatic and magnetostatic...

In this paper We present the simulation of the acceleration of a 1.5MV high-current electron beam in a diode and the following transport process using a electron trajectory progiam(SLAlC-226).The design of high brightness diodes is a critical issue in high efficiency FELs.The purporc of this work is to find an optimal diode configuration and to devdopan effective method of numerical simulstion .The program is specifically written to compute trajectories of electrons in an electrostatic and magnetostatic focussing system including the effects of space charge and self-magnetic fidds.Magnetic fields may be of arbitray configurations .We have discussed effects of the applied magnetic field on the beam guality. The Computed results are compared with those obtained using EBQ code and the experimental data at LLNL .It is shown that our simulation are reasonable and therefore ,the SLAC-226 code is very useful for designing of the induction Linacs.

本文采用SLAC-226程序计算了1.5MV强流电子束在二极管内的加速过程以及出阳极后的传输过程。高亮度二极管的设计是高效率自由电子激光的关键技术之一。本工作的目的就是通过1.5MV注入器的数值模拟,为寻找优化的二极管结构设计提供一种有效的数值方法。程序考虑了外加电磁场和电子束自身空间电荷和自生磁场效应。我们讨论了外加磁场的各种构形以及它们对束流品质的影响,计算结果与国外EBQ程序计算结果和实验结果进行了比较,证明本工作的结果是可靠的。SLAC-226程序可以为直线感应加速器的设计提供参考数据。

SAW-based real time chirp z transformation processor is widely accepted as one of new supporting techniques for spectrum analysis in radar, communication, electronic warfare and radio telescope. However, a critical issue for a practical system is a dependence of frequency determination, which is the fundamental function of the processer, upon the temperature at which SAW chirp dalay lines operate. A correct understanding of the temperature behaviour of the processor will pave the way for system design...

SAW-based real time chirp z transformation processor is widely accepted as one of new supporting techniques for spectrum analysis in radar, communication, electronic warfare and radio telescope. However, a critical issue for a practical system is a dependence of frequency determination, which is the fundamental function of the processer, upon the temperature at which SAW chirp dalay lines operate. A correct understanding of the temperature behaviour of the processor will pave the way for system design and temperature compensation. As we know, so far no satisfactory analysis theory has been established. In this paper, an analytic expression for analysing the variation of the determined frequency with the temperature is introduced to M-C configuration of the processor, which is deduced from a time scale principle. This expression indicates that the variation is not only dependent on time-delayed temperature coefficient of device substrate, but is also a function of device parameters and operation frequencies. Furthermore, by means of our theory, a reasonable explanation could be given to the discrepency which appeared between the experiments and the theory done by Claude Lardat of Thomson CSF.

基于线性调频变换算法的SAW富氏谱分析技术是现代雷达、通讯、电子对抗及射电天文等领域的新一代支持技术之一。其中测频是其最基本功能。由于所用SAW色散延迟线基底材料延时温度系数的影响,所测频率通常随工作温度变化。故实用中正确认识测频随温度变化规律,是系统正确设计与补偿的前提。迄今据作者所知尚无令人满意的定量分析理论。本文由时间比例关系出发,定量分析了此类技术中基础结构的M-C型功率谱仪测频温度特性。给出相对不同频率分量的延时随温度变化的解析表达式。指出这种变化不仅与器件参数及基片延时温度系数有关,且与工作频率有关。应用本文结果还可合理地解释法国Thomson CSF公司的Claude Lardat有关实验中理论与实验的偏差。

The thermal stability in SI-GaAs substrates is a critical issue in the fabrication of GaAs field effect transistors and integrated circuits by direct Ion implantation. In this paper, a thermally unstable undoped LEC SI-GaAs crystal has been investigated using tempsrature-dependent Hall measurement, OTCS and atomic absorption spectroscopy etct In the above sample, the impurity Fe of 6.7×1015cm-3 is found by atomic absorption spectroscopy. A deep level at -0.62eV is observed by using other analysis techniques...

The thermal stability in SI-GaAs substrates is a critical issue in the fabrication of GaAs field effect transistors and integrated circuits by direct Ion implantation. In this paper, a thermally unstable undoped LEC SI-GaAs crystal has been investigated using tempsrature-dependent Hall measurement, OTCS and atomic absorption spectroscopy etct In the above sample, the impurity Fe of 6.7×1015cm-3 is found by atomic absorption spectroscopy. A deep level at -0.62eV is observed by using other analysis techniques and is tentatively assigned to the deep acceptors related to the impurity Fe, which may have significant effect on the thermal stability of undoped LEC SI-GaAs Crystals.

SI-GaAs衬底材科的热稳定性对于用直接离子注入工艺制作GaAs场效应器件及集成电路是至关重要的.本文采用变温霍耳效应测量、光注入瞬态电流谱(OTCS)和原子吸收光谱等方法研究了热稳定性差的不掺杂LEC SI-GaAs单晶.结果表明,原子吸收光谱分析发现此晶体存在6.7×10~(15)cm~(-3)Fe杂质,其他两种方法观察到一个~0.62eV深能级.文中推测这是与杂质Fe有关的深受主,认为它对不掺杂LBC SI-GaAs单晶的热稳定性可能有重大影响.

 
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