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overall density
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  整体密度
     Based on petroleum fraction's distillation curve and overall density to characterize it,asimulation system of atmospheric-vacuum distillation unit for crude oil is developed using blocks combination method.
     用石油馏分的蒸馏曲线 (ASTM或TBP)和整体密度进行虚拟组分切割 ,以单元模块组合法严格求解常减压蒸馏塔 ,建立原油减压蒸馏装置的流程模拟系统。
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  “overall density”译为未确定词的双语例句
     The overall height is 0.028 m, the overall diameter is 0.074 m, and the total mass is 0.120 kg, the overall density is 990 kg/m~3. The sensitivity is -24 dB(0 dB=1 V/g), the capacitance is 2.4 nF, and the resonance frequency is 13 kHz, the frequency band 20~(5 000 Hz.)
     作者研制的加速度计高 0 .0 2 8m、直径 0 .0 74 m、总质量 0 .12 kg、密度 990 kg/ m3,其电压灵敏度为 - 2 4 d B(0 d B=1V / g) ,电容量为 2 .4 n F,谐振频率13k Hz,工作频带 2 0~ 5 0 0 0 Hz
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     Results Totally,(2 987) rodents were caught,including one species,three genera and eight families and(67.46%) of Rattus norvegicus and(14.30%) of Rattus flavipectus,respectively,with an overall density of rodents of(14.31%).
     结果共捕获鼠形动物2 987只,总密度为14.31%。 啮齿目动物2 792只,分1科3属8种,其中褐家鼠占67.46%,黄胸鼠占14.30%;
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     The green corridors are scarce and their overall density is 2.63 km/km~2.Among the green corridors,the green road corridors are the longest and they are 60.29 percent in the whole green corridors.
     绿色廊道极其缺乏,总密度仅为2.63 km/km2;
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     The results indicate that the overall density of the ra-diation-induced interface traps and oxide traps increase with proton energy and doses.
     结果表明,质子辐照所诱发的新生界面陷阱和氧化层陷阱随质子能量和剂量的增加而增加。
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     A characterization approach for petroleum fractions based on the ASTM distillation data and the overall density has been proposed.
     本文提出了一种从镏分恩氏蒸馏数据和总体密度对石油馏分进行假组分切割和物性估算的方法。
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  相似匹配句对
     THE OVERALL STRUCTURE OF VOLTERRA MODEL WITH DEFINED DENSITY
     具有密度制约的Volterra模型的全局结构
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     DENSITY OF THE EARTH
     地球的密度
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     Microvessel density was associated with overall survival by Kaplan Meier analysis.
     Kaplan-Meier分析 MVD高密度组的生存率明显低于低密度组 (P<0 .0 1)。
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     Density "Experiment
     密度的实验
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     On Overall Education
     关于素质教育的思考
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  overall density
The overall density of CRC in layer I did not differ significantly between controls and schizophrenics.
      
An overall density change occurs in composites due to the thermal mismatch between the metal matrix and the reinforcement.
      
Cyclic compaction improves overall density as well as density uniformity and reinforcement distribution uniformity.
      
A lower bound is derived for the density decay which indicates that the overall density follows the power law t-x with α = mm(d/4, 1).
      
Two-phase vapor-liquid equilibrium (VLE) isochores for binary mixtures are defined as the thermodynamic paths along which the overall density and composition are fixed.
      
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The proton radiation-induced interface traps in Al-gate MOS structure with HCl oxide are studied by means of the differential capacitance method. The gate oxides were thermally grown in dry O2+(0-10%) very dry HC1 gas at 1 160 The proton radiation energy ranged from 120 keV to 300 keV and total dose ranged from 8X1013 p/cm2 to 1 × 1016 p/cm2. Our results indicate that the overall density of the radiation-induced interface traps increases with proton energy and total dose. However, by introducing 6 % HC1...

The proton radiation-induced interface traps in Al-gate MOS structure with HCl oxide are studied by means of the differential capacitance method. The gate oxides were thermally grown in dry O2+(0-10%) very dry HC1 gas at 1 160 The proton radiation energy ranged from 120 keV to 300 keV and total dose ranged from 8X1013 p/cm2 to 1 × 1016 p/cm2. Our results indicate that the overall density of the radiation-induced interface traps increases with proton energy and total dose. However, by introducing 6 % HC1 during the oxidation process, the density of the radiation-induced interface traps are drastically re-duced. Thus, the radiation response of MOS device can be significantly changed. These ex-perimental results can be explained by of the two-stage H+ process.

用微分电容法研究质子辐照HCl氧化物铝栅MOS结构诱导的界面陷阱,栅氧化层在1 160℃很干燥的、含0~10%HCl的气氛中热生长而成,质子辐照能量为120~300keV,注入总剂量范围为8×10~(13)~1×10~(16)p/cm~2。结果表明,辐照诱导的界面陷阱能级密度随质子能量、剂量增加而增加。然而,氧化层中掺入6%HCl时,辐照诱导的界面陷阱明显减少。这样,已能有效地改变MOS器件的抗辐照性能。实验结果可用H~+二级过程解释。

Using the differential capacitance method and the midgape-votageshift lechnique to study the proton radiation induced interface traps and oxide trapsin the Al-gate MOS structure. The results indicate that the overall density of the ra-diation-induced interface traps and oxide traps increase with proton energy and doses.These experimental rcsults were explained in terms of the two-stage H~+ process andTRIAM-89 computer simulation.

利用微分电容法和禁带中央电压漂移技术,研究了铝栅MOS结构质子辐照诱发的新生界面陷阱和氧化层陷阱结构。结果表明,质子辐照所诱发的新生界面陷阱和氧化层陷阱随质子能量和剂量的增加而增加。用H~+二级过程模型和计算机模拟定性解释了实验结果。

A characterization approach for petroleum fractions based on the ASTM distillation data and the overall density has been proposed. The ASTM data was treated to produce the TBP data and the mean average boiling point by explicit correlations and then the pseudo-components were cut by using the integral method. The computational procedure and an example were given.

本文提出了一种从镏分恩氏蒸馏数据和总体密度对石油馏分进行假组分切割和物性估算的方法。该方法用显式关联直接将恩氏蒸馏数据转换成实沸点蒸馏数据和计算出馏分的中平均沸点,然后用积分法切割假组分。文中给出了数值计算步骤和例题。

 
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