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mo source
相关语句
  钼源
     Effect of Mo Source on Performance of Mo-Based Zeolite Catalysts for Methane Dehydroaromatization
     钼源对钼基催化剂芳构化性能的影响(英文)
短句来源
     Used Si O mesoporous materials as supporter and MoCl 4 as Mo source, molybdenum was assembled successfully on the mesoporous materials.
     用中孔硅氧材料 (HMS)做载体 ,Mo OXCl4作钼源 ,成功地实现了钼在中孔材料上的组装 ;
短句来源
  “mo source”译为未确定词的双语例句
     Study of Luminescence Dependence of ZnO Films on Growth Temperature by MOCVD Using Ethanol as MO Source
     以乙醇为氧源生长ZnO薄膜中温度对光谱影响的研究
短句来源
  相似匹配句对
     Mo;
     Mo ;
短句来源
     Mo.
     Mo、Co主要分布在籽粒中;
短句来源
     On the Source and Course of XU Zhi-mo Thought
     梦想与追求──徐志摩思想源流简论
短句来源
     information source.
     随着Intenet的快速发展,web已经成为跨全球的信息源。
短句来源
     innovation the source;
     创新乃企业可持续发展之源 ;
短句来源
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  mo source
A microbiological test was developed to detect Mo-deficiency in soils, based on the percentage increase of N2-ase (C2H2) activity ofAzotobacter paspali growing in a defined medium with small amounts of soil as the Mo source.
      
A microbiological test was developed to detect Mo-deficiency in soils, based on the percentage increase of N2-ase (C2H2) activity ofAzotobacter paspali growing in a defined medium with small amounts of soil as the Mo source.
      


A highly automatic MOCVD apparatus has been desingned and manufactured in our lab. There are 9 ways of flow-meter controls, including 6 ways for growth sources and 1 for HCL gas. A bypass of N2 gas is added. The system has such airtightness that under 8 kg/cm2 pressure there's no leakage detected using the Snoop Leakage Detector. The reaction chamber can reach a vacuity of 1.33 × 10-1 Pa when applying the vaccum pump system, and it is heated by a RF generator with temperature accuracy of ±0.2℃. The temperature...

A highly automatic MOCVD apparatus has been desingned and manufactured in our lab. There are 9 ways of flow-meter controls, including 6 ways for growth sources and 1 for HCL gas. A bypass of N2 gas is added. The system has such airtightness that under 8 kg/cm2 pressure there's no leakage detected using the Snoop Leakage Detector. The reaction chamber can reach a vacuity of 1.33 × 10-1 Pa when applying the vaccum pump system, and it is heated by a RF generator with temperature accuracy of ±0.2℃. The temperature accuracy of the cold traps of Mo-sources is ±0.5℃. The system can give alarms to over-pressure, leakage of H2 , AsH3, PH3 and can react accordingly through computer to ensut-re safty. The safeguard procedures of power failure and water shortage is also included. The system provides special softwares for mono/multi-layer growth of AlGaAs and GaAs with all the gas flows and temperatures controlled by computer and digitized on the panel of the system.Experiments have seen high stability, reproducibility and safty reliability of the system, which ensure no harm to both the operators and environment. The system can be controlled manually or automatically by a toggle switch to meet the need of eith experimental research or production.

本文介绍的是自行设计与制造的高度自动化MOCVD装置。该装置设有9路流量控制管路,6路源,1路HCl气源及氯气旁路,装置气密性好,8 kg/cm~2正压时,用Snoop溶液检测无泄露。配有真空机组,反应室可抽至10~(-5)乇。反应室为高频加热,控温精度±0.2℃,有机源冷井控温精度±0.1℃,设有压力,H_2、AsH_3、PH_3报警及自动处置系统,有断水,断电保护,全部控制量均为数字显示,温度及全部流量的设置与调整均实现微机自动控制,配有GaAs,AlGaAs单层及多层结构生长工艺的专用软件,实现完全自动化生长。该装置性能稳定,重复性好,安全可靠,对操作者及环境无危害,设有手动及自动转换开关,适合于科研和生产使用。

ZnO films were deposited on Si substrates by MOCVD.Two sets of MO sources were used here.One was Zn(C 2H 5) 2(DEZ) and CO 2,another was Zn(CH 3) 2(DMZ) and H 2O.The carrier gas was nitrogen instead of hydrogen,in order to avoid ZnO decomposed in hydrogen at high temperature.During growth process,the pressure in reactor chamber was 6000Pa and atmosphere,respectively.The growth temperature employed in the experiments were 500,550,600,650 and 700℃.Growth time was 1 hour for all samples.After growth,every...

ZnO films were deposited on Si substrates by MOCVD.Two sets of MO sources were used here.One was Zn(C 2H 5) 2(DEZ) and CO 2,another was Zn(CH 3) 2(DMZ) and H 2O.The carrier gas was nitrogen instead of hydrogen,in order to avoid ZnO decomposed in hydrogen at high temperature.During growth process,the pressure in reactor chamber was 6000Pa and atmosphere,respectively.The growth temperature employed in the experiments were 500,550,600,650 and 700℃.Growth time was 1 hour for all samples.After growth,every sample was cut to two parts.One of them was annealed in air at 900℃ for 1 hour.The structures and photoluminescence properties at room temperature of the as deposited and annealed samples were investigated.It was found that the structure and photoluminescence properties of the ZnO films markedly depends on the MO source,growth pressure and temperature.Only low growth pressure is useful for deposition of ZnO films.As using Zn(C 2H 5) 2 and CO 2,the films deposited at 500℃ are all c axis oriented .When the growth temperature increases,the ZnO(002)diffraction peak of the samples became low and low and other ZnO diffraction peaks increase.That means the orientation of crystal grains in the films tends bad,and the film becomes polycrystal.When the growth temperature was at 650℃,not only ZnO but also ZnO 2 peaks appeared in XRD patterns.These properties exhibit more remarkable after samples were annealed .As the growth temperature was at 700℃,ZnO films can't be deposited on Si substrates. The AT PL spectrum of the sample deposited at 500℃ includes two emission peaks,their wavelength are 380nm and 520nm,respectively.After annealing,only one stronger 380nm peak is observed.But the appearance of ZnO 2 in the samples grown at 650℃ changes the photoluminescence spectra.For the as prepared films,the PL spectrum has one peak,the wavelength is 374nm,and a new emission peak with 575nm appears after annealing. Using Zn(C 2H 5) 2 and H\-2O,the deposited ZnO films are composed by high pressure phase of ZnO.The PL spectrum of the sample grown at 550℃ exhibits green emission whose wavelength is 520nm.The emission peak of the sample grown at 450℃ shifts to 345nm.Its energy,about 3 6eV,is larger than the band gap of ZnO.The forming and effects of high pressure phase of ZnO needs to be researched in detail.

近年来 ,随着近紫外光发射氧化锌薄膜研究的进展 ,许多先进的薄膜生长手段被广泛采用。本文探索了用MOCVD方法在硅衬底上生长氧化锌薄膜的方法 ,试验了用几种不同的有机金属源生长ZnO薄膜 ;研究了源材料及生长压力和温度对薄膜生长的影响 ;观察了样品的室温光致发光光谱。通过与溅射方法生长的ZnO薄膜的比较 ,提出了影响材料结构和发光特性的可能原因。

Used Si O mesoporous materials as supporter and MoCl 4 as Mo source, molybdenum was assembled successfully on the mesoporous materials. By the aid of XRD and FT IR, structure of the catalyst was characterized. The factors influenced the epoxidation of styrene by TBHP, such as exchanging ratio of Mo/carrier, activating temperature, reacting temperature, and consumption of catalyst, were systemically researched. When activating temperature was 180℃,reacting temperature was between 45~55℃,consumption...

Used Si O mesoporous materials as supporter and MoCl 4 as Mo source, molybdenum was assembled successfully on the mesoporous materials. By the aid of XRD and FT IR, structure of the catalyst was characterized. The factors influenced the epoxidation of styrene by TBHP, such as exchanging ratio of Mo/carrier, activating temperature, reacting temperature, and consumption of catalyst, were systemically researched. When activating temperature was 180℃,reacting temperature was between 45~55℃,consumption of catalyst was 8% of materials, the conversion of styrene approach 90% and the yield of epoxy styrene was up to 85 %.

用中孔硅氧材料 (HMS)做载体 ,Mo OXCl4作钼源 ,成功地实现了钼在中孔材料上的组装 ;借助 XRD和 FT- IR对这种催化剂的结构进行了表征 ;通过改变条件 ,系统研究了催化剂制备的交换比 (质量 )、活化温度和反应温度对催化叔丁基过氧化氢环氧化烯烃的影响 ,结果表明 :活化温度为 180℃、反应温度 45~ 5 5℃、反应时间 6h,催化剂用量为原料质量的 8%时 ,苯乙烯转化率接近 90 % ,环氧化苯乙烯收率达 85 %

 
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