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the band
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  能带
    THEORY OF THE BAND NONPARABOLICITY EFFECTS ON FROHLICH POLARONS
    Frohlich极化子的能带非抛物性效应理论
短句来源
    The Investigation on the Band Structures of Nb_3X_4(X=S, Se, Te)
    Nb_3X_4(X=S,Se,Te)的能带结构研究
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    The Investigation on the Band Structures of NbX(X=C, N, O)
    NbX(X=C,N,O)的能带结构研究
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    STUDY ON THE BAND STRUCTURE OF SUPERLATTICES COMPOSED WITH FOUR MATERIALS
    四种材料构成的超晶格能带结构的研究
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    Studies on the Band Structure of CrC
    CrC的能带结构研究
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  “the band”译为未确定词的双语例句
    THE BAND 2 OF NUCLEI ~(156)Er AND ~(158)Er
    (156)~Er和(158)~Er的带二
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    THE BAND MODEL PARAMETERS CALCULATION FOR WATER
    水分子带模型参数的计算
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    The Band Model Calculation Method on Infrared Radiation For Inhomogeneous Gase System
    非均匀气体系统红外辐射谱带模型计算方法
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    THE BAND OFF-SET IN SiO2/SiO INTERFACE A PHOTOELECTRON EMISSION STUDY
    SiO_2/SiO界面能级位移光电发射的研究
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    THE CALCULATION FOR FRANCK-CONDON FACTORS OF THE BAND SYSTEM A 3Σ - u-X 3Σ - g OF B 2
    B_2分子A~3Σ_u~--X~3Σ_g~-带系的Franck-Condon因子计算
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  the band
UV-vis absorption spectrum and atomic force microscope (AFM) images indicated that the change of concentration and post-treatment temperature may adjust the band-gap of CdS to obtain stable, homogeneous and compact films.
      
In addition, the UWB printed antennas with the band-notched functions are also presented.
      
The band gap of KTN nanoparticles is determined to be 3.26 eV from the optical absorption spectra.
      
For this purpose the fsec and psec oscillations in the bands of stimulated emission of P* and in the band of reaction product BA- at 1020 nm were investigated.
      
The band shift from 740 to 720 nm in the low-temperature fluorescence spectrum (77 K) suggests a disturbance of energy transfer from LHC to the Chl a form at 710-712 nm.
      
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The energy bands of the zinc blende structure are treated by the simplified LCAO method of Slater and Koster. A model of the chemical bond is proposed for the purpose that the matrix elements involved may be expressed in terms of certain parameters of the chemical bonds. The energy levels of a number of points in the Brillouin zone are investigated. With this approach, we discuss the variation of the band gap as well as the position shift of the conduction band edge with the change of chemical compositions....

The energy bands of the zinc blende structure are treated by the simplified LCAO method of Slater and Koster. A model of the chemical bond is proposed for the purpose that the matrix elements involved may be expressed in terms of certain parameters of the chemical bonds. The energy levels of a number of points in the Brillouin zone are investigated. With this approach, we discuss the variation of the band gap as well as the position shift of the conduction band edge with the change of chemical compositions.

本文在Slater与Koster的简化原子轨道线性组合方法的基础上,引入了化学键的参量。将布里渊区的某些特殊点的能级表示为这些参量的函数。讨论了禁带宽度与导带最小点之位置随化学组成的变化而变化的情况。得到的结果与已有事实定性符合。

In accordance with the bond formation of impurity atoms in semiconductors, a wave function of the local molecular type was admixed into the band function. We obtained an effective mass-equation with an additional term of the S function type. In the case of simple band structure, the influence of atomic character on the ionization energy, and the relation between the shallow and the deep levels were discussed. Further more, we analyzed the valley-orbit splitting caused by the existance of several...

In accordance with the bond formation of impurity atoms in semiconductors, a wave function of the local molecular type was admixed into the band function. We obtained an effective mass-equation with an additional term of the S function type. In the case of simple band structure, the influence of atomic character on the ionization energy, and the relation between the shallow and the deep levels were discussed. Further more, we analyzed the valley-orbit splitting caused by the existance of several equivalent minima of conduction band in Ge and Si. Because of the interaction between bonds, the variation of wave function of a shallow level is small, but the correction on the ionization energy may be appreciable. This is in agreement with the hyper-fine structure data of the electron spin resonance.

分析了杂质原子在半导体中的成键情况,我们在一般能带波函数中混入部分分子型局域波函数,从而得到带有修正项的有效质量方程。在简单能带结构情况下,我们讨论了电离能与原子性质的关系,及由浅能级向深能级的转化。进而分析了由于Ge、Si中导带各极值所产生的谷轨道分裂。对浅能级,由于键间相互作用,电离能可以有相对较大的修正,但波函数却变化很小,这与电子自旋共振超精细结构的实验结果一致。

The carrier lifetimes of p-type and n-type InSb are measured by the stationary photo-conductive and photoelectromagnetic method in the temperature range 85-290°K. The carrier lifetimes of all intrinsic samples tend to the same value as the temperature increases toward the room temperature. It is 3×l0-8 sec at 290°K. From the absolute value and temperature dependence of the lifetime and the influence of the doping, it is concluded that the carrier lifetime in InSb around the room temperature is controlled by...

The carrier lifetimes of p-type and n-type InSb are measured by the stationary photo-conductive and photoelectromagnetic method in the temperature range 85-290°K. The carrier lifetimes of all intrinsic samples tend to the same value as the temperature increases toward the room temperature. It is 3×l0-8 sec at 290°K. From the absolute value and temperature dependence of the lifetime and the influence of the doping, it is concluded that the carrier lifetime in InSb around the room temperature is controlled by the band to band impact recombination.

用定态光电导及光磁电的方法测量了p型n型InSb在85—290°K之间的电子及空穴的寿命。在室温附近,所有样品的截流子寿命都趋于同一值,在290°K时为3×10~(-8)秒。从寿命的绝对值及温度依赖关系,以及掺杂对寿命的影响,可以肯定在室温附近起主要作用的复合过程是带间碰撞复合过程。 在200°K以下,p型样品中的电子寿命与空穴寿命有很大差别,表明有陷阱作用。用位于价带之上0.05eV的复合中心及位于导带之下0.11eV的电子陷阱能完满地解释200°K以下的寿命与温度的依赖关系。

 
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