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the band
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  能带
    Pseudopotential Calculation of the Band Edge Structures of the Type Ⅱ InAs/GaSb(001) Superlattices
    第二类InAs/GaSb(001)半导体超晶格能带边结构的赝势计算
短句来源
    In this paper,the band structures,density of states and charge density contours of Si-based superlattices Ⅵ(A)/Si6/SiO2/Si6/Ⅵ(A)(VI(A)=O,Se) had been investigated with the first-principles calculations.
    本文采用第一性原理对新的硅基材料Ⅵ(A)/Sim/SiO2/Sim/Ⅵ(A)(m=6,Ⅵ(A)=O,Se)的能带结构、态密度和电荷密度等进行了计算研究.
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    Study on the Band Structures of Defective and \=Irregular Surfaces on MgO
    MgO缺陷和不规则表面的能带结构研究
短句来源
    Effects of inhomogeneous strain of quantum well structures on the band structure and gain
    非均匀应变对量子阱结构的能带和增益的影响
短句来源
    Calculation of the Band Structures for the Quantum Well InfraredDetectors
    量子阱红外探测器能带结构的计算
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  “the band”译为未确定词的双语例句
    THE BAND OFF-SET IN SiO2/SiO INTERFACE A PHOTOELECTRON EMISSION STUDY
    SiO_2/SiO界面能级位移光电发射的研究
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    Study on the Band Discontinuities of HWE PbTe/Si Hetrojunction
    热壁外延PbTe/Si异质结带偏移的研究
短句来源
    The Absorption of Water Vapor in the Band of 3.2 μm in Real Atmosphere
    实际大气中水汽3.2μm带的吸收
短句来源
    The Method for Designing the Band reject Filiter with UAF42
    利用UAF42设计带阻滤波器的方法
短句来源
    Spectroscopic ellipsometry indicates that the quantum effect of ZnO quantum dot leads to the fact that the absorption energy of exciton(3.76 eV) is bigger than the band gap of bulk ZnO.
    SE表征发现ZnO量子点的量子效应导致了ZnO量子点的激子吸收能(3.76eV)比ZnO体晶的能带隙(3.37eV)大。
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  the band
UV-vis absorption spectrum and atomic force microscope (AFM) images indicated that the change of concentration and post-treatment temperature may adjust the band-gap of CdS to obtain stable, homogeneous and compact films.
      
In addition, the UWB printed antennas with the band-notched functions are also presented.
      
The band gap of KTN nanoparticles is determined to be 3.26 eV from the optical absorption spectra.
      
For this purpose the fsec and psec oscillations in the bands of stimulated emission of P* and in the band of reaction product BA- at 1020 nm were investigated.
      
The band shift from 740 to 720 nm in the low-temperature fluorescence spectrum (77 K) suggests a disturbance of energy transfer from LHC to the Chl a form at 710-712 nm.
      
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In spite of the fact that many technical properties of recently developed humidity-sensitive semiconducting ceramics have considerably been improved, theoretical studies are rather inadequate, impeding further progress to be made in the idealization of the humidity-sensitive materials and devices.This paper analyzes theoretically the electronic process within the semiconducting ceramics under the influence of humidity according to the band structure, surface state and boundary state of the oxide semiconducting...

In spite of the fact that many technical properties of recently developed humidity-sensitive semiconducting ceramics have considerably been improved, theoretical studies are rather inadequate, impeding further progress to be made in the idealization of the humidity-sensitive materials and devices.This paper analyzes theoretically the electronic process within the semiconducting ceramics under the influence of humidity according to the band structure, surface state and boundary state of the oxide semiconducting ceramics. The method for controlling the temperature coefficient of resistivity is suggested thereby with emphasis placed on the investigation of relevant mechanisms.

近几年发展起来的湿敏半导瓷,虽然在各种技术性能方面都有了较大的改进,但是在我国这方面的理论研究工作却仍做得很少,因而使湿敏材料及其器件的进一步发展受到了阻碍.本文从氧化物半导瓷的能带结构、表面态与界面态理论出发,分析了水份作用下在半导瓷中的电子过程,及电阻率温度系数的调整途径等问题.文中还着重对有关作用机理作了探讨.

In this paper, the coupling between discrete hole on the broad walls of two parallel rectangular waveguides is studied. Optimum characteristic limitation of single hole (or hole-pair) in the [u1, u2] band is obtained: the optimum coupling smoothness ismin the maximum limit of minimum directivity in the band is(dB)It was proved that: the circular holes cannot fulfill the two optimum limits simutaneously. The conditions of optimum single hole (or hole-pair) should beIn general, there exsists the following...

In this paper, the coupling between discrete hole on the broad walls of two parallel rectangular waveguides is studied. Optimum characteristic limitation of single hole (or hole-pair) in the [u1, u2] band is obtained: the optimum coupling smoothness ismin the maximum limit of minimum directivity in the band is(dB)It was proved that: the circular holes cannot fulfill the two optimum limits simutaneously. The conditions of optimum single hole (or hole-pair) should beIn general, there exsists the following inequalitywith optimum limit of the bandwidth

本文研究了两相互平行的矩形波导离散孔的宽壁耦合。得出了单孔(或孔对)在[u_1,u_2]频带间的性能极限,最佳耦合平稳度min(△C)和带内最小定向性的最大极限max(Dmin)的数学表述。证明了圆孔不能同时达到这两个极限。文中还给出了最佳单孔(或孔对)的条件式和带宽不等式。

Miniature narrow band filters with high performance can be formed by means of high Q and low temperature coefficient dielectric resonators, such as barium titanate, which are reasonably placed in a cut-off waveguide and properly excited. This paper describes a new type dielectric resonator band-pass filter which can be combined with MIC. At present, this kind of filter is the best one of the filters used in MIC. It has been shown, for example, that a 5 cm band-pass filter using three dielectric resonators with...

Miniature narrow band filters with high performance can be formed by means of high Q and low temperature coefficient dielectric resonators, such as barium titanate, which are reasonably placed in a cut-off waveguide and properly excited. This paper describes a new type dielectric resonator band-pass filter which can be combined with MIC. At present, this kind of filter is the best one of the filters used in MIC. It has been shown, for example, that a 5 cm band-pass filter using three dielectric resonators with relative bandwidth of 0.2% has an insertion loss of about 0.8 dB, the attenua-tion outside the band over 50 dB, and the ratio of 30 dB to 3 dB bandwidth approxi-mately 3.3. This filter has been theoretically analysed, and some interesting formulae are derived. The practical measured performances for 1-to 4-resonator band-pass filters are presented.

本文阐述一种能与微波集成电路结合使用的新型介质谐振器带通滤波器。这种滤波器是目前能用于微波集成电路的性能最佳的一种窄带滤波器。本文对这种滤波器作了理论分析;并导出了有关滤波器设计的主要公式;给出了一至四谐振器带通滤波器的实测性能。例如:一个相对带宽为 0.2%的 5cm三谐振器滤波器,其带内插损为 0.8dB左右,带外衰减大于50dB,30dB与 3dB的带宽比约为 3.3。

 
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