助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   piezoelectric scattering 的翻译结果: 查询用时:0.006秒
图标索引 在分类学科中查询
所有学科
更多类别查询

图标索引 历史查询
 

piezoelectric scattering
相关语句
  压电散射
     Drift electron mobility, the Hall factor and Hall mobility in GaN are calculated according to Mattiessen's rule as a function of temperature for carrier concentrations with the compensation ration as a parameter on the basis of taking into account the individual average scattering momentum relaxation time of four scattering mechanisms, namely, ionized impurity scattering, polar mode optical scattering, acoustic piezoelectric scattering and acoustic phonon deformation potential scattering which have an effect on electron mobility of GaN.
     考虑了对纤锌矿型氮化镓低场电子输运影响最为显著的4种散射机制———电离杂质散射,极化光学波散射,声学波压电散射和声学声子形变势散射的单个平均动量驰豫时间,采用Mattiessensrule计算了不同补偿率以及不同载流子浓度条件下,氮化镓电子漂移迁移率,霍耳因子以及霍耳迁移率随温度的变化.
短句来源
  相似匹配句对
     BRILLOUIN SCATTERING IN PIEZOELECTRIC SEMICONDUCTOR CRYSTAL ZnO
     压电半导体ZnO单晶的Brillouin散射
短句来源
     Scattering and its measurement
     光散射及其测量
短句来源
     Piezoelectric Immunosensors
     压电免疫传感器
短句来源
     Scattering of SH Wave by Arc-shaped Cracks in Piezoelectric Medium
     压电材料中弧形裂纹对入射SH波的散射
短句来源
     The Application of The Piezoelectric
     压电陀螺的应用
短句来源
查询“piezoelectric scattering”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  piezoelectric scattering
In the 2DEG in AIGaN/GaN heterostructures, the piezoelectric scattering also plays an important role.
      
These scattering processes contain the acoustic phonon scattering, the piezoelectric scattering, and the ionized-impurity scattering.
      


High-purity single crystals of ZnSxSe1-x (x = 0.15) were grown with sublimation method under a controlled partial pressure of selenium and sulphur corresponding to the minimum total pressure. The crystal wafers were taken from the grown ZnSxSe1-x single crystal on cleaving along the (110) cleavage plane. The cleaved crystals were heat-treated at 1024℃ for 64 hours in molten Zn, which is labelled sample A. The sample A was heat-treated again at 350℃ for 3 hours, this sample is labelled B. When the sample A was...

High-purity single crystals of ZnSxSe1-x (x = 0.15) were grown with sublimation method under a controlled partial pressure of selenium and sulphur corresponding to the minimum total pressure. The crystal wafers were taken from the grown ZnSxSe1-x single crystal on cleaving along the (110) cleavage plane. The cleaved crystals were heat-treated at 1024℃ for 64 hours in molten Zn, which is labelled sample A. The sample A was heat-treated again at 350℃ for 3 hours, this sample is labelled B. When the sample A was heat-treated at 1030℃ for 119 hours under 100 Torr of the zinc partial pressure, it is labelled C. Ohmic contacts of In dot were made with a supersonic soldering iron. The carrier concentration and Hall mobility of n-ZnSxSe1-x(x = 0.15) were measured at the range of from liquid nitrogen temperature to room temperature with Van der Pauw method.Figure 1 shows the carrier concentration as a function of temperature for three specimens.The carrier concentration was calculated with equation (l')on the base of the measured Hall coefficient Rh by assuming that the Hall factor r is close to unity. The donor ionization energy Ed was calculated with equation ( 5 ) and the slope of the linear port of the curve at low temperature region in Fig. 1. Values of Nd and Na were obtained by fitting eq. (2) to the experimental curves in Fig. 1, assuming a single set of donors, g=1/2. The values of Ed, Nd, Na, (Nd-Na) and the degree of compensation Na/Nd are listed in Table 1. It can be seen from the data in Fig. 1. and Table 1 that, the three samples have different carrier concentrations and acceptor concentrations over the whole temperature range covered. Both the donor and acceptor concentrations are in the magnitude of 1016cm-3. The carrier concentration of sample A is the biggest of the three samples. On the contrary, the acceptor concentration of sample C is the biggest of them. It is of interest that the donor ionization energies of the three samples are equal. This means that no shallow donor defects are generated, but the native defect concentrations of VZn(zinc vacancy) and Zni (interstitial Zn atom) are changed,under different heat-treatment conditions.) .We believe that the concentration of VZn are decreased and Zni are increased for the molten Zn heat-treated sample at high temperature. When, however, these samples are heat-treated again under a low Zn partial pressure at high temperature, there will be a decrease of Zni and an increase of VZn. So that, different Nd Na and Nd/Na for three samples are considered to be due to the changed concentration of VZn and Zni.The maximum mobilities of the three samples are listed in Table 1. The maximum mobility of sample A is 2150cm2/V·s, which is close to the mobility of ZnSe single crystals.This result express that grown ZnSxSe1-x (x=0.15) single crystal is of high-quality. Fig. 2 shows the relationship of the theoretical mobility μ with T, calculated from the above eqs. ( 6 ) -( 9 ) in comparison with the experimental data for samples A, B and C at 77-300K.μ.p,μi and μp are the mobility dominated by polar optical mode scattering, ionized impurity scattering and piezoelectric scattering, respectively. μt is the total mobility of μop and μi. It can be seen that over 120K temperature range the experimental data coincide very well with the theoretical mobility of polar optical mode scattering, which means that ZnSxSe1-x have the properties of a polar semiconcuctor as well as the binary Ⅱ-Ⅵ compounds. In lower temperature range, the experimental data for A and B samples agree with that of the combination of the polar optical scattering and the charged impurity scattering, while the experimental data of sample C agree with the mobility of the charged impurity mode scattering. This indicates that the concentration of charged impurity (or defect) for the sample C is larger than that for the samples A and B. This result is considered to be due to the increase of VZn with a single charge, which were responsible for a large fraction of the total charged defect scattering.

用Vah der Pauw法在77~300K温度范围内测试了n-ZnS_xSe_(1-x)(x=0.15)单晶的霍尔迁移率,共最大值为2150cm~2/V·s迁移率随温度变化的实验结果与载流子散射的几种理论模型曲线相比较,得出在120K附近为界,在高温区中极化的光学声子散射限定迁移率;在低温区中光学声子散射和离化本征受主散射的混合模型或离化本征受主散射限定迁移率。认为离化本征受主是一次电离的Zn空位。

Drift electron mobility, the Hall factor and Hall mobility in GaN are calculated according to Mattiessen's rule as a function of temperature for carrier concentrations with the compensation ration as a parameter on the basis of taking into account the individual average scattering momentum relaxation time of four scattering mechanisms, namely, ionized impurity scattering, polar mode optical scattering, acoustic piezoelectric scattering and acoustic phonon deformation potential scattering which have...

Drift electron mobility, the Hall factor and Hall mobility in GaN are calculated according to Mattiessen's rule as a function of temperature for carrier concentrations with the compensation ration as a parameter on the basis of taking into account the individual average scattering momentum relaxation time of four scattering mechanisms, namely, ionized impurity scattering, polar mode optical scattering, acoustic piezoelectric scattering and acoustic phonon deformation potential scattering which have an effect on electron mobility of GaN. The results show that the total hall factor increases with the temperature below (200K) and decreases above (200K). The maximum hall factor obtained is 1.22 at (200K). In addition, the polar mode optical scattering plays a dominant role in electron mobility for room temperature and above. The acoustic phonon deformation potential scattering is also important at lower temperatures.

考虑了对纤锌矿型氮化镓低场电子输运影响最为显著的4种散射机制———电离杂质散射,极化光学波散射,声学波压电散射和声学声子形变势散射的单个平均动量驰豫时间,采用Mattiessensrule计算了不同补偿率以及不同载流子浓度条件下,氮化镓电子漂移迁移率,霍耳因子以及霍耳迁移率随温度的变化.计算表明,温度小于200K时总霍耳因子随温度的增加而增加,200K时达到峰值1.22,温度大于200K后霍耳因子则随着温度的增大而减小.此外,在包括室温在内的较高温度下,极化光学波散射对电子迁移率的变化起决定作用.温度较低时,声学波压电散射对电子迁移率的影响较大.

 
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关piezoelectric scattering的内容
在知识搜索中查有关piezoelectric scattering的内容
在数字搜索中查有关piezoelectric scattering的内容
在概念知识元中查有关piezoelectric scattering的内容
在学术趋势中查有关piezoelectric scattering的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社