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   diffusion of 在 无线电电子学 分类中 的翻译结果: 查询用时:0.113秒
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diffusion of
相关语句
  扩散
    THE DIFFUSION OF Zn IN GaAs AT LOW TEMPERATURE
    GaAs中的低温Zn扩散
短句来源
    THE METHOD OF BOX DIFFUSION OF ZnP_2 IN GaP SURFACE LAYER WITH FIXED PRESSURE
    ZnP_2在GaP表面的定压箱法扩散
短句来源
    THEORETICAL AND EXPERIMENTAL INVESTIGATIONS OF DIFFUSION OF Zn INTO InP THROUGH InGaAsP
    通过InGaAsP外延层的InP深Zn扩散理论与实验研究
短句来源
    Diffusion of Zn. Cd in InSb
    Zn、Cd在InSb中的扩散
短句来源
    Diffusion of positrons to surface of semiconductors
    半导体中正电子向表面的扩散
短句来源
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  中扩散
    The film has a transmittance over 90% of visible light, and a carrier density up to 1.0×1021 cm-3. Diffusion of In in ITO to a-Si:H can be effectively suppressed with SnO2 layer of 200-300 A in thickness.
    实验表明,当膜层厚为200~300A时,就可有效阻挡ITO膜中的In向a-Si:H中扩散
短句来源
    Based on Dso2>>Dsi an ideal profile of Ga concentration in the baseregion has been achieved by using diffusion of Ga into SiO2/Si.
    利用元素Ga其Dsio2>>DS的特点,实现了SiO2/Si中扩散,使基区得到了理想的浓度分布;
短句来源
  “diffusion of”译为未确定词的双语例句
    Investigate and Fabricate Plana—rGlass Waveguides Formed by Thermal Diffusion of Ions
    离子热扩散平板玻璃光波导研制
短句来源
    STUDY OF THE DIFFUSION OF Cd AND Zn IN InP
    Cd和Zn在InP中扩散的研究
短句来源
    STUDY OF THE DIFFUSION OF Zn INTO Ge
    Zn在Ge中扩散的研究
短句来源
    Doping Mechanism of Gallium Aluminium Diffusion of Open Tube
    开管铝镓扩散的掺杂机制
短句来源
    Application of Even Design in Studing Thermal Diffusion of Coating Ion in SrTiO_3 MultiFunction Ceramics
    均匀设计法研究SrTiO_3多功能陶瓷的涂覆离子热扩散
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  diffusion of
One DR peak associated with the short-distance diffusion of oxygen vacancies was observed in both temperature and frequency spectra.
      
The method of NMR spin echo with the magnetic field pulse gradient was used for studying self-diffusion of water molecules in the radial root direction.
      
Diffusion of an Organic Cation into Root Cell Walls
      
Nonspecific pore-forming proteins (porins) are the major proteins of the outer membrane of Gram-negative bacteria responsible for diffusion of low-molecular-weight compounds.
      
Furthermore, these inhibitors not only reduce the local tissue damage but also retard the easy diffusion of systemic toxins and hence increase survival time.
      
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Detailed distributions of diffusion of phosphorus into silicon have been measured by the four-point probe method. During the measurement, each successive layer is removed by the anodic oxidation technique. These impurity distributions are found to deviate from the error function complement even with the surface concentration kept constant during diffusion. If it is assumed that this is due to a concentration denpendence of the diffusion coefficient, the experimental results would indicate that...

Detailed distributions of diffusion of phosphorus into silicon have been measured by the four-point probe method. During the measurement, each successive layer is removed by the anodic oxidation technique. These impurity distributions are found to deviate from the error function complement even with the surface concentration kept constant during diffusion. If it is assumed that this is due to a concentration denpendence of the diffusion coefficient, the experimental results would indicate that the diffusion coefficient rises very rapidly when the concentration exceeds 1019/cm3.

用四探针测量薄层电导方法及阳极氧化去层技术,测定了磷在硅中扩散的具体分布,在恒表面浓度下,它们偏离余误差函数分布。如认为这是由于扩散系数是杂质浓度的函数,实验得到了当杂质浓度大于10~(19)原子/厘米~3时,扩散系数随杂质浓度增加而增大的强烈依赖关系。 用同样方法测定了磷通过二氧化硅层后在硅中扩散的具体分布,研究了这些杂质分布的特性,实验表明,不同厚度的氧化层在1300℃高温下仍具有掩蔽效应,在完全掩蔽失效时间附近,杂质分布的共同特点是表面浓度较低(~10~(17)原子/厘米~3)、结较浅(~1微米)。对不同厚度的氧化层,经过足够的时间后,硅中表面浓度不受氧化层厚度的影响,而只由扩散源的蒸气压决定。磷通过氧化层后扩散的具体分布情况还与扩散源的性质、条件等密切相关。扩散过程中观察到的氧化层厚度增长有可能影响表面附近杂质的具体分布情况。

The diffusion of arsenic from the vapor phase into germanium has been

在恒定温度800℃之下进行了在砷的表面浓度范围为1.9×10~(18)-4.9×10~(19)原子/厘米~2,以及锗材料中含铟浓度范围为4×10~(14)-1×10~(17)原子/厘米~3的砷以气相散入锗的研究。扩散系数是利用测量扩散层的P-n 结方法来决定的,而杂质在扩散层中的浓度分布则用连续腐蚀法结合四探针电导测量来决定。发现扩散系数是随着P-型锗的纯度增加而逐渐增大,以及随着砷的表面浓度增大而增大(在N_s>2.3×10~8原子/厘米~3的区域),同时发现扩散层中砷的浓度分布显著地偏离于理论分布。对于体内杂质浓度以及砷的表面浓度对扩散系数所起的作用进行了一些讨论.

In this paper the characteristics of the concentration of donor atoms in ionic crystal with colloidal particles are discussed. It is shown that the concentration of donor atoms is independent of the concentration of impurity. At the late period of growth of colloidal particles, the concentration of donor atoms can be approximately represented by the critical concentration of impurity. At that period the "equilibrium" between donor atoms and colloidal particles does not imply that the free energy of the system...

In this paper the characteristics of the concentration of donor atoms in ionic crystal with colloidal particles are discussed. It is shown that the concentration of donor atoms is independent of the concentration of impurity. At the late period of growth of colloidal particles, the concentration of donor atoms can be approximately represented by the critical concentration of impurity. At that period the "equilibrium" between donor atoms and colloidal particles does not imply that the free energy of the system is located at its minimum point, and it implies that the free energy of the system decreases slowly. From the point of view of diffusion of impurity atoms the physical picture of the growth of colloidal particles is described, and the growth speed of colloidal particle is discussed.

本文在前文的基础上进一步讨论了固溶胶粒的生长和施主原子浓度等问题。本文先讨论施主原子浓度的特性,证明它与杂质浓度无关;在胶粒生长后期,施主原子浓度可以近似地用杂质临界浓度表示。施主原子与胶粒的“平衡”,并不意味着系统的自由能处于极小,而是继续缓慢下降,因而在“平衡”条件下测得的施主原子浓度具有一定的零散度。进而从原子扩散角度描述小胶粒缩小和大胶粒生长的物理图象,并讨论了粒子的线度生长速率;接着讨论胶粒有一定分布时的情况。 具体讨论了KCl,KBr,KI和NaCl的临界状态,及其有关参量E_β,β。再后就热凝聚和光凝聚等问题进行一些讨论。

 
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