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generation recombination
相关语句
  相似匹配句对
     On "Generation
     “代”论
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     The last generation
     最后这代人
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     Property Recombination
     物业管理企业资产重组浅析
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     recombination of signals.
     信号重组。
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     Recombination in Genetic Algorithms
     遗传算法中的重组操作
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The noise power spectrum of a few high purity p-type InSb has been measured at 77°K. In general, it consists of the generation-recombination noise and the modulation noise. The magnitude of the former is proportional to p_0~(-2), while the latter is proportional to p)0~(-1), where p0 is the equilibrium concentration of the majority carriers. The purer the sample is, the more important is the generation-recombination noise. The magnitude and the power spectrum of the G-R noise are in accord...

The noise power spectrum of a few high purity p-type InSb has been measured at 77°K. In general, it consists of the generation-recombination noise and the modulation noise. The magnitude of the former is proportional to p_0~(-2), while the latter is proportional to p)0~(-1), where p0 is the equilibrium concentration of the majority carriers. The purer the sample is, the more important is the generation-recombination noise. The magnitude and the power spectrum of the G-R noise are in accord with the present theory. The lifetime r of the majority carriers can be obtained from the G-R noise power spectrum; it is found that τp0 = 1.1 X 109 sec/cm3.

测量了几个高纯的p型InSb样品在液氮温度下的噪声频谱,一般由产生复合噪声及调制噪声组成,前者与热平衡载流子浓度p_0的二次方成反比,后者与p_0成反比。因此,材料愈纯,产生复合噪声所占的比重就愈大。产生复合噪声的数值与频谱与已有的理论符合。由此频谱可确定多数载流子寿命τ,得到τp_0≈1.1×1O~9秒/厘米~3,并给予理论解释。

The main purpose of this paper is to demonstrate the current-voltage characteristics of the crystalline and the amorphous junctions can be written mathematically similar in form. The differences between them can be represented by various "saturatlon currents" and "ideality factors" . As indicated in physics these differences arise from the effect of bias on gap-state charge occupation. Namely, bias changes the height of the intrinsic barrier and generationrecombination rate.The results obtained...

The main purpose of this paper is to demonstrate the current-voltage characteristics of the crystalline and the amorphous junctions can be written mathematically similar in form. The differences between them can be represented by various "saturatlon currents" and "ideality factors" . As indicated in physics these differences arise from the effect of bias on gap-state charge occupation. Namely, bias changes the height of the intrinsic barrier and generationrecombination rate.The results obtained are substantially in agreement with experimental evidences.

本文的主要目的是证明:晶体结与非晶结的电流—电压特性可以在数学上写成相似的形式.它们之间的差别,可以用不同的"饱和电流"与不同的"理想因子"来表示.并且指出,这些差别在物理上是由于偏压对隙态电荷占领的影响,亦即偏压改变了本征势垒的高度和产生—复合率,所得的结果基本上是与实验一致的.

Semiconductor device simulation has manifested its ever-increasing importance for the design of miniature devices in VLSI end new discrete devices. This paper describes systematically this technique and its recent progress. First, the basic semiconductor equations with their boundary conditions are presented. Followed by a description of empirical models for the physical device mechanisms, including mobility, band-gap narrowing, generation-recombination of carriers, and some experimental results...

Semiconductor device simulation has manifested its ever-increasing importance for the design of miniature devices in VLSI end new discrete devices. This paper describes systematically this technique and its recent progress. First, the basic semiconductor equations with their boundary conditions are presented. Followed by a description of empirical models for the physical device mechanisms, including mobility, band-gap narrowing, generation-recombination of carriers, and some experimental results obtainedr ecently. Subsequently, the normalization and discretization methods are discussed, and the numerical solutions of equations prevailing nowadays are outlined too. Finally, a typical example of device modeling to demonstrate the power of semiconductor device simulation is given.

半导体器件模拟,对于设计VLSI中的微小尺寸器件或者是新型的半导体分立器件,都已越来越显得重要。本文系统地综述了这门技术及其新近的进展。文中首先系统地介绍了半导体基本方程及其边界条件。接着综述了有关器件物理参数的各种经验模型及其最近的某些实验结果,包括有关迁移率、禁带变窄效应和载流子的产生和复合等。然后讨论了方程的归一化和离散化,并概述了现今流行的数值解法。最后,举实例说明半导体器件模拟的重大意义。

 
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