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in the bonding
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  键合工艺条件
     Vacuum conditions of atmosphere to 200~1 000 Pa, contact forces of 2~5 kN and temperature of RT to 80 ℃ were used in the bonding study.
     键合工艺条件为:真空条件为从大气到200~1000Pa、接触压力为2~5kN、温度从室温到80℃。 RR
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  “in the bonding”译为未确定词的双语例句
     Interfacial structure and element diffusion in the bonding Si_3N_4 to Ni with Ti foil
     用Ti箔连接Si_3N_4/Ni的界面结构与元素扩散
短句来源
     On the other hand,3114AA and 3144C were superior to AB adhesive in the bonding strength for metal lead,resistance to corrosion caused by sulfuric acid,and compared with 3114C,3114A had shorter curing time,higher bonding strength to ABS,stronger resistance to corrosion caused by sulfuric acid and it could cure under normal temperature,so we chose 3114A to seal the battery poles.
     而3114AA、3114C在对金属铅的粘接强度、耐硫酸腐蚀方面都优于AB胶,同时3114AA较3114C具有固化时间更短、对ABS的粘接强度更高、耐硫酸腐蚀能力更强、可以常温固化等优点,因此,我们就用3114AA作电池极柱密封的胶黏剂。
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     The optimum parameters for the diffusion bonding are: T=1050℃, P=20MPa, t=45min. Nickel foil with 25μm thick as interlayer was applied in the bonding joints.
     确定了获得优质接头的最佳工艺参数区间,即扩散连接温度T=1050℃,连接压力P=20MPa,连接时间t=45min,选用Ni箔作为中间层,厚度为25μm.
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     However, the electrons of CO 4σ and 1π orbitals move from O to C. Corresponding to such kind of movement of electrons, 4σ contributes more than 5σ in the bonding between Ni and CO.
     而4σ、1π的电子云则由O向C移,结果在Ni-CO键中,4σ的成键作用较5σ强。
短句来源
     No cracks were observed in the bonding interface,and the bonding joints also showed good mechanical characteristics with pull stress of 3.0 to 12.0g.
     结果表明Au—Al键合界面无裂纹产生,且机械性能良好,键合拉力在3.0~12.0g之间;
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  in the bonding
On the other hand, when the specimen was kept at 1373 K for 3.6 ks, residual liquid remained in the bonding region.
      
The failure mode was affected mainly by the variation in the bonding force.
      
The results are interpreted by invoking the difference in the bonding configurations of these mesas as well as the growth facility in a direction leading to the largest reduction of dangling bonds under the growth conditions.
      
With an increase in the bonding temperature to 900 °C and above, the bond strength drops due to the formation of brittle Fe-Ti base intermetallics in the diffusion zone.
      
Air voids in the bonding materials will degrade the mechanical strength of the glass epoxy reinforced collars.
      
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This paper was aimed at investigatiing the influence of post-weld heat treatmenton the mechanical properties of stainless steel overlaid joint and discussing the relaiionbetween the change in impact toughness and micro structure in the overlaid cladding.The base metal was Q-T treated Ni Cr-Mo-V high strength steel.In the inner surfaceof vessel two layers of clad metal were deposited by submerged arc weldingwith chromium-nickel stainless steel strip as the consumable electrode.The first layerwas 0Cr20Ni10 and...

This paper was aimed at investigatiing the influence of post-weld heat treatmenton the mechanical properties of stainless steel overlaid joint and discussing the relaiionbetween the change in impact toughness and micro structure in the overlaid cladding.The base metal was Q-T treated Ni Cr-Mo-V high strength steel.In the inner surfaceof vessel two layers of clad metal were deposited by submerged arc weldingwith chromium-nickel stainless steel strip as the consumable electrode.The first layerwas 0Cr20Ni10 and the second layer was 00Cr20Ni10 stainless steel.A seriesof test specimens were taken from the overlaid cladding,bonding line and heataffected zone of welded pieces,which had been heat treated at 600,625,650and 680℃ for 15,30,50 and 100 hours.The results obtained are as follows:(1)The post-weld heat treatment temperature shouldnt be over 650℃ for Q-Ttreated Ni-Cr-Mo-V high strength steel.(2)All side bending specimens are freeof cracks after bending,but the ductility in the bonding area decreases with increasedtime of post-weld heat treatment and its temperature.Ductility loss is associatedwith the width of diffusion of carbon from base metal to the overlaid cladding.(3)The toughness of the overlaid cladding decreases with increased time of post-weld heat treatment and its temperature.The decrease of toughness also depends onferrite content and carbon content.(4)0Cr20Ni10 low carbon stainless steelcladding is less susceptible to embrittlement than 0Cr20Ni10Nb cladding.(5)The embrittlement of 00Cr20Ni10 extra low carbon overlaid cladding after post-weldheat treatment is due to the Cr23C6 precipited along the ferrite boundries as wellas the formation of a very small amount of (?) phase.

本文研究了焊后热处理对不锈钢堆焊接头机械性能的影响,并探讨了堆焊层韧性和显微组织变化之间的关系。母材是调质处理的Ni-Cr-Mo-V 高强钢。容器内壁采用双层带极埋弧堆焊工艺,过渡层和不锈层分别为0 Cr20Ni10和00 Cr20Ni10不锈钢。试件取自堆焊层、接合区和热影响区,其焊后热处理工艺是600、625、650和680℃并均分别保温15、30、sO和100小时。试验结果如下:(1)对调质处理的Ni-Cr-Mo-V 高强钢,焊后热处理温度不得高于650℃。(2)冷弯后所有侧弯试件都未出现裂纹,但接合区的延性却随加热温度的提高和保温时间的延长而减少。延性减少与接合区中碳扩散层宽度有关.(3)堆焊层韧性随加热温度的提高和保温时间的延长而减少。它也与堆焊层的焊态铁素体含量和含碳量有关.(4)0Cr20Ni10不锈钢堆焊层的抗脆化性能高于0 Cr20Ni10Nb 堆焊层.(5)对00Cr20Ni10超低碳堆焊层热处理后产生脆化的原因是沿铁素体相析出Cr23C6和形成极少量的σ相.

A new scheme is proposed to correlate the bond energies of molecular complexes. It is formulated in the form of the following equation:-⊿H=96.487 αβ/(I-E)where⊿H is the heat of formation of the complex with the donor and the acceptor molecules at infinite separation as the reference state; α, E and β, I are two pairs of parameters characterizing respectively the acceptor and the donor in the bonding strength of the complex formation. Of the four parameters, only I has the definite meaning and is set equal...

A new scheme is proposed to correlate the bond energies of molecular complexes. It is formulated in the form of the following equation:-⊿H=96.487 αβ/(I-E)where⊿H is the heat of formation of the complex with the donor and the acceptor molecules at infinite separation as the reference state; α, E and β, I are two pairs of parameters characterizing respectively the acceptor and the donor in the bonding strength of the complex formation. Of the four parameters, only I has the definite meaning and is set equal to the ionization potential of the donor. The numerical factor 96.487 appears because it is found convenient to express ⊿H in kJ and the quantities on the right side of the equation in eV. The calculated values are in good agreement with the experimental results for over 350 complexes which involve a variety of bonding types such as σ~*-n, σ~*-π, π-π, π-n as well as many typical hydrogen bondings (cf. Tables 2,3 and 4 in the Chinese Text). On the basis of the new scheme discussion on ionization potential, strain energy and coordination center are tentatively given.

本文提出一个定量表达分子络合物中给体和受体作用能的计算模式.根据此模式对约350种分子络合物的生成热进行计算,计算值和实验值吻合良好.在此键能计算模式的基础上,还对给体电离势、配位中心和位阻效应等问题展开讨论.

The energy bands of GaAs, GaP and GaAstP_(1-x) are calculated using the zone-variational method. Since there are different atoms in a cell, different radii are selected for various atomic spheres according to the actual size for corresponding atoms. The crystal potential is calculated by superposing various atomic potentials. Since the atomic potentials are distorted in the bonding sphere under the interaction with other atoms in crystal, a few adjusting parameters are selected to adjust the corresponding...

The energy bands of GaAs, GaP and GaAstP_(1-x) are calculated using the zone-variational method. Since there are different atoms in a cell, different radii are selected for various atomic spheres according to the actual size for corresponding atoms. The crystal potential is calculated by superposing various atomic potentials. Since the atomic potentials are distorted in the bonding sphere under the interaction with other atoms in crystal, a few adjusting parameters are selected to adjust the corresponding atomic potential and an analytical expression is used to approach the resulted potential. The potential adjusting parameters are selected to make the calculated energy band close to experimental results. The band structures which agree with experimental results are obtained for GaAs and GaP. Furthermore, these poteatials are used to calculate the energy band of GaAs_xP_(1-x).

使用分区变分法计算了GaAs,GaP和GaAs_xP_(1-x)合金的能带。鉴于原胞内包含不同的原子,依据实际原子的大小,对不同原子球选用了不同的半径。晶体势用相应原子势的迭加势来计算。考虑到组成晶体时原子势场由于电子成键而产生畸变,因而在球外成键区选用了一些调整参数来调整势场,然后再用解析表式来逼近这种调整原子势。适当地选择调整参数使算得的能带同已知的实验值接近。对GaAs和GaP已算得了同实验结果符合的能带结构。使用所得的调整原子势进一步计算了GaAs_xP_(1-x)合金的能带。

 
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