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energy-band
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  能带
     ENERGY-BAND STRUCTURES OF HIGH-Tc SUPERCONDUCTORS Tl_2Ba_2Ca_(n-1)Cu_nO_(2n+4)
     Tl_2Ba_2Ca_(n-1)Cu_nO_(2n+4)超导体的能带结构
短句来源
     The Electronic Energy-band Structures of (HgS/CdS)_nHgS Linear Superlattice
     (HgS/CdS)_nHgS线状超晶格电子能带结构
短句来源
     THE CALCULATION OF THE ENERGY-BAND STRUCTURE OF SOME SEMICONDUCTORS WITH THE PSEUDOPOTENTIAL PERTURBATION METHOD (APPLICATION TO GaAs, GaP AND Ga[As_(l-x)P_x]ALLOY)
     用赝势微扰法计算某些半导体的能带结构(用于GaAs,GaP和Ga[As_(1-x)P_x]合金)
短句来源
     Strained Si has the advantages of high-mobility and adjustable energy-band structure, and its processing technology can also be compatible with traditional silicon technology.
     应变Si具有迁移率高、能带结构可调的优点,且能与传统的体Si工艺兼容,在目前的集成电路产业中,应变Si/SiGe异质结构的器件和电路已经得到运用。
短句来源
     A Study of Field-Enhanced Non-Equilibrium Transient in MIS Structure by Using Quasi-Equilibrium Energy-Band Model
     用准平衡能带模型研究MIS结构场增强非平衡瞬态
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  “energy-band”译为未确定词的双语例句
     The structure of this self-assembled film was characterized by adopting electrochemical method, fluoressence spectrum and electronic energy-band spectrum. The performance of this fluorescent self-assembled film was studied by adopting electrochemical impedance spectroscopy and cyclic voltammetry.
     文中采用电化学、荧光光谱、电子能谱等方法表征自组装膜的结构,采用电化学阻抗谱技术和循环伏安法研究该荧光性自组装膜的性能.
短句来源
     Based on the doped energy-band diagram,the effect of the relative energy level of the deep trap center and its microcosmic optical parameter on holographic recording properties of doubly doped LiNbO_3 is analyzed theoretically.
     结合掺杂能级图,理论分析了LiNbO3双掺杂晶体深陷阱中心能级的相对位置及其微观光学参量对全息记录性能的影响。
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  energy-band
The oxidized heterostructures were analyzed by electrochemical impedance spectroscopy and by modeling the characteristics of the electrolyte-gate FETs and the energy-band diagram of the heterostructures.
      
Energy-Band offsets and electroluminescence in n-InAs1-xSb1-x/N-GaSb heterojunctions grown by liquid phase epitaxy
      
Explicit incorporation of the energy-band structure into an analysis of the defect chemistry of PbTe and SnTe
      
Energy-band diagrams and reduction of the barrier height are calculated for p-Si-PtSi structures with highly-doped surface layers produced by molecular-beam epitaxy and recoil implantation.
      
Energy-band spectra are calculated for various modifications of coarse arsenic inclusions in gallium arsenide.
      
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On the basis of the three premises of Stoner's collective electron theory of ferromagnetism, appropriate energy band diagrams are constructed. These diagrams vividly show the physical situation involved in Stoner's theory. With the help of diagrams, Stoner's criterion for occurrence of ferromagnetism, kθ/ε0=ξ>2/3, and for complete magnetization, ξ≥2~(-1/3), can be deduced in a rather simple and straightforward way. With the help of diagrams, the transfer of electrons from d-band to s-band due to splitting of...

On the basis of the three premises of Stoner's collective electron theory of ferromagnetism, appropriate energy band diagrams are constructed. These diagrams vividly show the physical situation involved in Stoner's theory. With the help of diagrams, Stoner's criterion for occurrence of ferromagnetism, kθ/ε0=ξ>2/3, and for complete magnetization, ξ≥2~(-1/3), can be deduced in a rather simple and straightforward way. With the help of diagrams, the transfer of electrons from d-band to s-band due to splitting of d-band in the ferromagnetic state is considered, and is estimated for nickel at 0°K to be about 1%.

在stoner集体电子铁磁理论的三个前提假设的基础上,一系列的能带图示被提供出来。这些图示鲜明地描绘了Stoner理论的物理情况。Stoner的铁磁判据,即在kθ′/ε_0==ξ>2/3时始能发生铁磁性及在ξ≥2~(-1/3)时磁化始完全,可利用图示简捷地得到。在铁磁状态下由d-带分裂引致的自d-带至S-带的电子边移,可利用图示加以考虑,并对0°K时的镍作了估算,结果约为1%。

The energy bands of the zinc blende structure are treated by the simplified LCAO method of Slater and Koster. A model of the chemical bond is proposed for the purpose that the matrix elements involved may be expressed in terms of certain parameters of the chemical bonds. The energy levels of a number of points in the Brillouin zone are investigated. With this approach, we discuss the variation of the band gap as well as the position shift of the conduction band edge with the change of chemical compositions.

本文在Slater与Koster的简化原子轨道线性组合方法的基础上,引入了化学键的参量。将布里渊区的某些特殊点的能级表示为这些参量的函数。讨论了禁带宽度与导带最小点之位置随化学组成的变化而变化的情况。得到的结果与已有事实定性符合。

The energy-band structures of the GaAs, GaP, and Ga [As1-x Px] alloys have been calculated on the "empty lattice" assumption by taking the pseudopotential as perturbations.

用赝势微扰法计算了GaAs,GaP和Ga[As_(1-x)P_x]合金的能带。赝势选择的原则是使计算所得直接能隙和间接能隙与实验值相符合。计算结果表明,不但能带次序准确,而且与室温下的实验值符合得很好。基于由GaAs到GaP晶格常数和赝势是线性变化的假设,计算了GaP含量为20%,50%和80%时Ga[As_(1-x)P_x]合金的能带。当GaP含量为41%时,直接能隙和间接能隙相等,这一数值刚好是Spitzer和Fenner的实验值的平均值。此时,由于很好满足光激射器p-n结所要求的条件,因此可望在光激射器中得到应用,它们的能带也就有一定的参考价值。

 
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