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   light extraction 的翻译结果: 查询用时:0.148秒
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light extraction
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  出光
     The simulated and experimental results both indicate that the coupled DBR can remarkably increase the light extraction efficiency of an AlGaInP LED. The non-encapsulated LED with the coupled DBR performs well,with 2.3mW output optical power,12 lm/W luminous efficiency,and 5.6% external quantum efficiency,with an improvement of 35% over that with a normal DBR.
     制备了采用Al0·6Ga0·4As/AlAs复合DBR的LED器件,未封装输出光功率为2·3mW,外量子效率为5·6%,发光效率可达12lm/W,比常规DBR器件提高了35%. 验证了复合DBR与常规DBR相比,可以大幅度提高AlGaInP红光LED的出光效率.
短句来源
     When the diameter of holes and air filling factor of 2D-8PQC are 600nm and 30% respectively, the enhancement factor of the surface light extraction efficiency of the 2D-8PQC was achieved as high as 2.5 under current injection.
     并将二维八重准晶光子晶体应用于电注入器件,当刻蚀孔径为600nm,空气填充因子为30%时,得到了表面出光效率高达2.5倍的增强。
短句来源
     The light extraction efficiency can be improved by 2 65 times when a thin Ni layer is used as an adhesive layer and Ag layer as a reflective layer.
     以 Ni为粘附层 ,Ag为反射层的 Ni/ Ag/ Au薄膜体系可以使立方 Ga N的出光效率从理论上提高 2 .6 5倍左右 .
短句来源
     Enhancement of Light Extraction of LED by Photonic Crystal Structures
     利用光子晶体提高InP基LED出光效率
短句来源
     The light extraction efficiency of the LED with the photonic crystal structure is twice as high as that of the unprocessed sample under the same testing conditions.
     成功实现了利用光子晶体结构增强LED的出光效率,与未制作光子晶体结构的LED相比,光子晶体结构LED的出光效率可在原来基础上提高1倍以上.
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  “light extraction”译为未确定词的双语例句
     Study on Light Extraction Efficiency of GaN-based Light-emitting Diode Chips
     GaN基发光二极管芯片光提取效率的研究
短句来源
     By using finite difference time domain(FDTD) method,the structures with square and triangular photonic-crystal-slab(PCS) on the ITO structure in OLED are simulated,and the improvement of these structures in the light extraction efficiency of the OLED is analyzed,and the optimized geometric parameters are given.
     通过使用时域有限差分(FDTD)方法,对在OLED中的氧化铟与氧化锡复合透明阳极ITO结构上覆盖二维正方以及三角排列SiNx圆柱光子晶体厚膜(PCS)的结构进行了数值模拟,并对这种全新结构对于提高束缚于高折射率材料中的光的抽取效率的效果进行了分析,并给出了最优化的几何参数。
短句来源
     The factors that limit light extraction efficiency of GaN-based light-emitting diodes(LEDs) chips were investigated by using Monte Carlo method.
     基于蒙特卡罗方法模拟分析了限制GaN基发光二极管(LEDs)芯片光提取效率的主要因素。
短句来源
     DETERMINANTS OF LIGHT EXTRACTION EFFICIENCY FOR AlGaInP HIGH BRIGHTNESS LIGHT EMITTING DIODES
     决定AlGaInP高亮度发光二极管光提取效率的主要因素
短句来源
     Based on the distribution of electrodes for power GaN blue LED chip,Au bumps on Si were fabricated by electroplating,and then the LED chips were welded to Si carrier by thermosonic FCB.The results indicate that the optic and electric characteristics as well as the light extraction uniformity of power LED after thermosonic FCB are fine as long as the heat and ultrasonic parameters are within a suitable range.
     结合功率型GaN基蓝光LED芯片的电极分布,在硅载体上电镀制作了金凸点,然后通过热超声倒装焊接技术将LED芯片焊接到载体硅片上。
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  相似匹配句对
     The Structured Light Image's Outline Extraction
     结构光图象的轮廓提取
短句来源
     The mechanism of extraction is discussed in the light of these results.
     根据这些结果讨论了萃取机理。
短句来源
     Is the light right?
     配种区和产房的光照
短句来源
     Liquid Light
     液体光阀
短句来源
     THE EXTRACTION OF MONASCOURUARIN
     红曲霉色素的提取
短句来源
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  light extraction
Furthermore we found that the higher light extraction efficiency is at the expense of reduced internal quantum efficiency (IQE) as injection current is increased.
      
We present a three-dimensional model based on rigorous coupled wave analysis (RCWA) which allows us to study the influence of periodic structures on light extraction in light-emitting diodes.
      
Modelling gratings on either side of the substrate for light extraction in light-emitting diodes
      
To improve light extraction from organic electroluminescent (EL) devices, we introduced a diffusive substrate with 25 μm thickness consisting of high refractive index resin and scattering particles.
      
Light extraction ability and polarization selectivity were changed by thickness of the electron transporting layer (ETL) of the organic EL device.
      
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The effect of stripe geometry on the performances of high speed GaAlAs/GaAs edge-emitting LED with asymmetrical waveguide is described.By calculating the efficiency ε_4 ofthe light extraction and of the light output power from the LED, we have discussed the rcla-tionships concerning the structure parameters of"5-layer-structure" LED with asymmetrical wa-veguide.We have also calculated lateral current spreading and optical field distribution ofthe LED under different stripe widths.The results calculated...

The effect of stripe geometry on the performances of high speed GaAlAs/GaAs edge-emitting LED with asymmetrical waveguide is described.By calculating the efficiency ε_4 ofthe light extraction and of the light output power from the LED, we have discussed the rcla-tionships concerning the structure parameters of"5-layer-structure" LED with asymmetrical wa-veguide.We have also calculated lateral current spreading and optical field distribution ofthe LED under different stripe widths.The results calculated are in good agreement withthose of our experiments. By reasonable option, edge-emitting LEDs with good performancesare obtained at a driving current of 100mA.The output power at the end of a fiber pigtail(core diameter of fiber=50 μm and mumerical aperture N_A=0.2) is 60-200μW (max 220μW) and the cut-frequency greater than 60 MHz (3dB) (max. 100 MHz). The LED's aregood source devices for optical fiber communication system with data rate of 34Mb/s and forhigh speed analog transmitting system.

本文阐述了条形几何结构对非对称波导GaAlAs/GaAs快速边发光管性能的影响,计算了五层非对称波导边发光管的输出功率和光抽取效率及它们与结构参数之间的关系,还计算了不同条宽的侧向电流分布和光场分布情况.计算与实验结果很好相符.通过合理的选择,在100mA的注入电流下获得了性能良好的发光二极管,其标准尾纤的输出功率≥60μW(最高达 220 μW),3 dB的截止频率fc≥60 MHz(最高 100 MHz).是三次群光通信和其他快速模拟传输系统较为理想的光源器件.

s The determinants of light extraction efficiency for light emitting diodes include:the status of light output surface,light absorption of anode and diode bulk.For AlGaInP highbrightness light emitting diodes the bulk absorption mainly caused by the GaAs substrate and active layer.Surface roughness,window layer and DBR reflector were usually employed to raise the light extraction efficiency,Effects of these measurements were discussed theoretically based on the model of...

s The determinants of light extraction efficiency for light emitting diodes include:the status of light output surface,light absorption of anode and diode bulk.For AlGaInP highbrightness light emitting diodes the bulk absorption mainly caused by the GaAs substrate and active layer.Surface roughness,window layer and DBR reflector were usually employed to raise the light extraction efficiency,Effects of these measurements were discussed theoretically based on the model of random distribution of spontaneous emission and typical structure of AlGaInP highbrightness light emitting diodes.

影响发光二极管光提取效率的主要因素有:出光表面状态、上电极和体内吸收.对于AlGaInP高亮度发光二极管体内吸收主要是衬底和发光区的吸收.一般采用出光表面粗化、窗口层、DBR反射器等措施来提高光提取效率.本文以自发辐射随机分布模型为基础,以AlGaInP高亮度发光二极管典型结构的各种参数为依据,从理论上分析了这几种主要措施对光提取效率的影响.

Properties of AlGaInP material and determinants of luminescence efficiency of AlGaInP LED were analyzed, some typical structure were comprehensively reported The determinants of luminescence efficiency of AlGaInP LED are light extraction efficiency at yellow orange color and internal quantum efficiency at yellow green color High bightness AlGaInP LEDs were fabricated by LP MOCVD, under 20mA operation current the LEDs emitting wavelength was 605nm with 18 3nm FWHM, brightness of the LED chips and...

Properties of AlGaInP material and determinants of luminescence efficiency of AlGaInP LED were analyzed, some typical structure were comprehensively reported The determinants of luminescence efficiency of AlGaInP LED are light extraction efficiency at yellow orange color and internal quantum efficiency at yellow green color High bightness AlGaInP LEDs were fabricated by LP MOCVD, under 20mA operation current the LEDs emitting wavelength was 605nm with 18 3nm FWHM, brightness of the LED chips and LED lamps with 15° viewing angle (2 θ 1/2 ) reached 30mcd and 1000mcd respectively

分析了AlGaInP材料的特点和AlGaInP高亮度发光二极管发光效率的决定因素,对目前国际上研究比较成熟的一些典型结构进行了综合分析,从理论上指出AlGaInP发光二极管在橙黄波段的发光效率的最终决定因素是光的提取效率,而在黄绿波段是发光二极管的内量子效率。并利用LP-MOCVD技术制备了cd级橙黄高亮度发光二极管,发光波长峰值在605nm,FWHM为18.3nm,20mA工作电流下,5.08cm(2英寸)外延片管芯平均轴向发光强度为20mcd,最大30mcd,平均工作电压1.9V,透明峰值角度2θ1/2=15°时轴向发光强度达到1000mcd。

 
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