gan growth gan生长(10)   gan生长      GaN Growth on Si and Si-SiO_2-Si Compliant Substrates      Si衬底和Si-SiO_2-Si柔性衬底上的GaN生长 短句来源      Simulation of gas flow in horizontal HVPE reactor and GaN growth      水平HVPE反应器中气流动力学模拟与GaN生长 短句来源      Study of the Nitration Processing in GaN Growth and the Growth of GaMnN Film      GaN生长中氮化工艺及GaMnN薄膜生长研究 短句来源      The reflection high-energy electron diffraction (RHEED) mounted in the electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system designed by us was used to monitor the GaN growth process in-situ.      通过在自制的电子回旋共振等离子体增强金属有机物化学气相沉积 (ECR -PEMOCVD)系统上装配反射高能电子衍射仪 (RHEED) ,对外延GaN生长过程进行原位监测。 短句来源      GaN Growth on Si Substrate Using Anodic Alumina as Buffer Layer      阳极氧化铝作缓冲层的Si基GaN生长 短句来源 更多          “gan growth”译为未确定词的双语例句      GaN Growth on LiGaO_2(001) with MOCVD      用MOCVD法在LiGaO_2(001)上生长GaN的研究 短句来源      GaN Growth on Si(111) by MOCVD      Si(111)衬底上GaN的MOCVD生长 短句来源      Design of MOCVD control system on GaN growth      GaN系半导体材料生长的MOCVD控制系统设计与实现 短句来源      Two kinds of reaction mechanism for GaN growth by MOCVD      MOCVD生长GaN的两种反应机制 短句来源      Investigation of GaN Growth Directly on Si (001) by ECR Plasma Enhanced MOCVD      GaN在Si(001)上的ECR等离子体增强MOCVD直接生长研究(英文) 短句来源 更多          相似匹配句对      Growth of GaN by MOCVD      GaN的MOCVD生长 短句来源      Growth of GaN by GSMBE      GaN材料的GSMBE生长 短句来源      The growth of E.      重组HBD 2对E. 短句来源      Growth in the Adventure      历险中的成长 短句来源 查询“gan growth”译词为用户自定义的双语例句     我想查看译文中含有：的双语例句 为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法，我们为您准备了出自英文原文的大量英语例句，供您参考。   gan growth The AlxGa1-xN:Si (x = ~0.1) nucleation layer is calibrated to be capable of acting as a good buffer layer for subsequent GaN growth as well as to provide excellent electrical properties. 例句来源       The first minimum reflectance during the initial high-temperature GaN growth was found to be a good indicator of the resistivity of the GaN buffer. 例句来源       Correlation between material properties of bulk p-GaN layers grown on undoped GaN and device performance of InGaN/GaN blue light-emitting diodes (LEDs) as a function of p-GaN growth temperature were investigated. 例句来源       Mg fluctuation in p-GaN layers and its effects on InGaN/GaN blue light-emitting diodes dependent on p-GaN growth temperature 例句来源       For the case of GaN growth on porous GaN, the overgrown layer replicates the underlying dislocation structure (although considerable dislocation reduction can occur as this overgrowth proceeds, independent of the presence of the porous layer). 例句来源       更多                    Epitaxial growth of GaN has been investigated by a large number of people. However, few publications relate to the pattern of the formation of pits and hills on the surface of GaN epitaxial layers during the growth process. Some authors have given an explanation based on the growth mechanism of GaAsP. They believe that the formation of pits or hills on the surface of GaN epitaxial layers probably depends on the amount of GaCl in the growing zone. If GaCl in the growing zo...             在Ga-HCl-NH_3-Ar系统中,做了多种生长参量变化对GaN晶体形貌影响的规律实验。结果表明,在其它生长条件固定的情况下,HCl的流量在15.8～21ml/min的范围内时,GaN晶体表面的生长坑大小与深度随HCl流量的增加而增大,反之则减小。而当HCl流量小于15.8ml/min时,生长的GaN膜逐渐成为多坑与多晶状。当大于21ml/min时,GaN膜的表面则逐渐出现丘锥体及多晶。经霍耳测量,样片的电子迁移率平均在116cm~2/V·s左右,最高的可达462cm~2/V·s。在HCl流量15.8～21ml/min的范围内,能重复生长出理想的n-GaN。 文摘来源          Due to the difference in chemical property between NH 3 and TMG,and growth temperature of over 1 000 ℃,the process of GaN grwoth is more complex and exists various reactions.In this letter,two groups of independent reactions representing different reaction mechanism are obtained by calculating the atomic coefficient matrix.The characteristics of two groups of the reactions are described.The parameters of thermodynamic equilibrium are calculated during the process of GaN growth by MO...             用ＭＯＣＶＤ生长ＧａＮ的过程中，由于ＮＨ３与ＴＭＧ化学性质的巨大差异，以及通常１０００℃以上的生长温度，使得其中反应过程比较复杂，且多种反应并存。文章首先对这样一个多元体系运用原子系数矩阵，计算出反应体系中存在的独立反应方程，得到两组代表不同反应机制的独立反应。描述了两组反应的主要特征。计算了以ＮＨ３为氮源，以ＴＭＧ为镓源，ＭＯＣＶＤ生长ＧａＮ过程中各种热力学平衡参数。由计算结果知，ＮＨ３的不彻底分解的反应是ＭＯＣＶＤ中正常生长ＧａＮ的化学反应。 文摘来源          The surface morphology of a buffer layer of the GaN material grownby MOVPE is observed with AFM. The change reason of the buffer layer structurebefore and after nitriding and annealing,and its effect on quality of epitaxial crystal, are emphatically studied. The change of the GaN growth mode under differentconditions and the mechanism of prime nucleate of the GaN growth are analyzed.After optimizing the growth conditions, a high quality GaN epitaxial layer with Xray...             报道了原子力显微镜对MOVPE生长GaN材料过渡层表面结构的观察，重点分析了氯化、退火前后过渡层结构变化的原因及其对外延生长晶体质量的影响，探讨了不同条件下GaN成核模式的变化，对GaN材料的生长初期成核机理有了进一步的了解，通过优化生长条件，最终获得了X射线双晶衍射半峰宽为5arcmin，表面明亮的高质量GaN外延层。 文摘来源   << 更多相关文摘         相关查询: growth of gan gan growth) growth growth growth growth-associated protein (gan-43) wet growth growth phenotype grape growth fostering growth grade growth sound growth  对查询结果不满意

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