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gan growth
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  gan生长
     GaN Growth on Si and Si-SiO_2-Si Compliant Substrates
     Si衬底和Si-SiO_2-Si柔性衬底上的GaN生长
短句来源
     Simulation of gas flow in horizontal HVPE reactor and GaN growth
     水平HVPE反应器中气流动力学模拟与GaN生长
短句来源
     Study of the Nitration Processing in GaN Growth and the Growth of GaMnN Film
     GaN生长中氮化工艺及GaMnN薄膜生长研究
短句来源
     The reflection high-energy electron diffraction (RHEED) mounted in the electron-cyclotron-resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) system designed by us was used to monitor the GaN growth process in-situ.
     通过在自制的电子回旋共振等离子体增强金属有机物化学气相沉积 (ECR -PEMOCVD)系统上装配反射高能电子衍射仪 (RHEED) ,对外延GaN生长过程进行原位监测。
短句来源
     GaN Growth on Si Substrate Using Anodic Alumina as Buffer Layer
     阳极氧化铝作缓冲层的Si基GaN生长
短句来源
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  “gan growth”译为未确定词的双语例句
     GaN Growth on LiGaO_2(001) with MOCVD
     用MOCVD法在LiGaO_2(001)上生长GaN的研究
短句来源
     GaN Growth on Si(111) by MOCVD
     Si(111)衬底上GaN的MOCVD生长
短句来源
     Design of MOCVD control system on GaN growth
     GaN系半导体材料生长的MOCVD控制系统设计与实现
短句来源
     Two kinds of reaction mechanism for GaN growth by MOCVD
     MOCVD生长GaN的两种反应机制
短句来源
     Investigation of GaN Growth Directly on Si (001) by ECR Plasma Enhanced MOCVD
     GaN在Si(001)上的ECR等离子体增强MOCVD直接生长研究(英文)
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  相似匹配句对
     Growth of GaN by MOCVD
     GaN的MOCVD生长
短句来源
     Growth of GaN by GSMBE
     GaN材料的GSMBE生长
短句来源
     The growth of E.
     重组HBD 2对E.
短句来源
     Growth in the Adventure
     历险中的成长
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  gan growth
The AlxGa1-xN:Si (x = ~0.1) nucleation layer is calibrated to be capable of acting as a good buffer layer for subsequent GaN growth as well as to provide excellent electrical properties.
      
The first minimum reflectance during the initial high-temperature GaN growth was found to be a good indicator of the resistivity of the GaN buffer.
      
Correlation between material properties of bulk p-GaN layers grown on undoped GaN and device performance of InGaN/GaN blue light-emitting diodes (LEDs) as a function of p-GaN growth temperature were investigated.
      
Mg fluctuation in p-GaN layers and its effects on InGaN/GaN blue light-emitting diodes dependent on p-GaN growth temperature
      
For the case of GaN growth on porous GaN, the overgrown layer replicates the underlying dislocation structure (although considerable dislocation reduction can occur as this overgrowth proceeds, independent of the presence of the porous layer).
      
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Epitaxial growth of GaN has been investigated by a large number of people. However, few publications relate to the pattern of the formation of pits and hills on the surface of GaN epitaxial layers during the growth process. Some authors have given an explanation based on the growth mechanism of GaAsP. They believe that the formation of pits or hills on the surface of GaN epitaxial layers probably depends on the amount of GaCl in the growing zone. If GaCl in the growing zone...

Epitaxial growth of GaN has been investigated by a large number of people. However, few publications relate to the pattern of the formation of pits and hills on the surface of GaN epitaxial layers during the growth process. Some authors have given an explanation based on the growth mechanism of GaAsP. They believe that the formation of pits or hills on the surface of GaN epitaxial layers probably depends on the amount of GaCl in the growing zone. If GaCl in the growing zone is not enough, pits will occur. On the contrary, hills will be caused. We have investigated the effect of conversion rate of HC1 and Ga on the morphology of GaN. Our experimental results are contradictory to the reference as mentioned above. A tentative explanation is given in this paper.The system of vapor phase epitaxy used in our laboratory is Ga-HCl-NH3-Ar. n-GaN samples were grown on (0001) oriented sappire substrates. A transparent epitaxy furnace was used. It was built with three different temperature zones. They were zinc, gallium and deposition zone respectively. The effect of substrate oriention on the quality of crystal growth was investigated by laue photograph. The morphology image of the GaN crystal were given by SEM analysis. The main factors which affect GaN growth rate are the HC1 flow and the effective surface area of Ga source at a fixed growth temperature and the growth rate is concerned with the quality of GaN crystal directly. We have investigated the relationship between the HC1 flow and the morphology of GaN epitaxial layers at a constant surface area of Ga source. The results are as follows:1 ) When the HC1 flow is in the range of 15.8mL/min -21mL/min, the pits area and their depth on the GaN surface increase with the HC1 flow.2 ) When the HC1 flow is higher than 21mL/min, the face morphology of GaN crystals does not have obvious difference.3 ) When the HCl flow reachs 26.3mL/min, the crystal face presents polycrystal with the definite orientation.4 ) When the HC1 flow is more than 26.3mL/min, hills occur on the surface of GaN epitaxial layer and the epilayer becomes polycrystal.5 ) When the HC1 flow is less than 12.3mL/min, a lot of pits occur on the surface of GaN crystal and the surface of epilayers becomes polycrystal, too.The Hall measurement shows that the electron mobilities of samples are in the range of 100cm2/V·s-116cm2/V·s. The best one is about 462cm2/V·s, which is the highest value so far.The experments have been made on GaN epitaxial layer grown by VPE in a Ga-HCl-NH3-Ar system. In order to study the regularity between the morphology and the HC1 flow at different temperature, high quality n-GaN epitaxial layer has been obtained under proper growth conditions.

在Ga-HCl-NH_3-Ar系统中,做了多种生长参量变化对GaN晶体形貌影响的规律实验。结果表明,在其它生长条件固定的情况下,HCl的流量在15.8~21ml/min的范围内时,GaN晶体表面的生长坑大小与深度随HCl流量的增加而增大,反之则减小。而当HCl流量小于15.8ml/min时,生长的GaN膜逐渐成为多坑与多晶状。当大于21ml/min时,GaN膜的表面则逐渐出现丘锥体及多晶。经霍耳测量,样片的电子迁移率平均在116cm~2/V·s左右,最高的可达462cm~2/V·s。在HCl流量15.8~21ml/min的范围内,能重复生长出理想的n-GaN。

Due to the difference in chemical property between NH 3 and TMG,and growth temperature of over 1 000 ℃,the process of GaN grwoth is more complex and exists various reactions.In this letter,two groups of independent reactions representing different reaction mechanism are obtained by calculating the atomic coefficient matrix.The characteristics of two groups of the reactions are described.The parameters of thermodynamic equilibrium are calculated during the process of GaN growth by MOCVD using...

Due to the difference in chemical property between NH 3 and TMG,and growth temperature of over 1 000 ℃,the process of GaN grwoth is more complex and exists various reactions.In this letter,two groups of independent reactions representing different reaction mechanism are obtained by calculating the atomic coefficient matrix.The characteristics of two groups of the reactions are described.The parameters of thermodynamic equilibrium are calculated during the process of GaN growth by MOCVD using NH 3 as N source and TMG as Ga source.The result shows that the incomplete decomposition for NH 3 will lead to regular growth of GaN.

用MOCVD生长GaN的过程中,由于NH3与TMG化学性质的巨大差异,以及通常1000℃以上的生长温度,使得其中反应过程比较复杂,且多种反应并存。文章首先对这样一个多元体系运用原子系数矩阵,计算出反应体系中存在的独立反应方程,得到两组代表不同反应机制的独立反应。描述了两组反应的主要特征。计算了以NH3为氮源,以TMG为镓源,MOCVD生长GaN过程中各种热力学平衡参数。由计算结果知,NH3的不彻底分解的反应是MOCVD中正常生长GaN的化学反应。

The surface morphology of a buffer layer of the GaN material grownby MOVPE is observed with AFM. The change reason of the buffer layer structurebefore and after nitriding and annealing,and its effect on quality of epitaxial crystal, are emphatically studied. The change of the GaN growth mode under differentconditions and the mechanism of prime nucleate of the GaN growth are analyzed.After optimizing the growth conditions, a high quality GaN epitaxial layer with Xray rocking curve...

The surface morphology of a buffer layer of the GaN material grownby MOVPE is observed with AFM. The change reason of the buffer layer structurebefore and after nitriding and annealing,and its effect on quality of epitaxial crystal, are emphatically studied. The change of the GaN growth mode under differentconditions and the mechanism of prime nucleate of the GaN growth are analyzed.After optimizing the growth conditions, a high quality GaN epitaxial layer with Xray rocking curve line width of 5' and bright surface is obtained.

报道了原子力显微镜对MOVPE生长GaN材料过渡层表面结构的观察,重点分析了氯化、退火前后过渡层结构变化的原因及其对外延生长晶体质量的影响,探讨了不同条件下GaN成核模式的变化,对GaN材料的生长初期成核机理有了进一步的了解,通过优化生长条件,最终获得了X射线双晶衍射半峰宽为5arcmin,表面明亮的高质量GaN外延层。

 
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