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ulsi circuit
相关语句
  ulsi电路
     The results indicate that such single electron circuit has good D/A converter function. Together with the intrinsic character of single electron(very low power dissipation,utmost integrated density,high speed,etc),this kind of circuit will have great competition ability in the design of future ULSI circuit.
     结果表明 ,这种单电子电路有很好的数 /模转换功能 ,加上单电子电路固有的极低功耗 ,可极限密度集成 ,高速度 ,使得这种功能性单电子电路在未来的 ULSI电路设计中具有独特的竞争能力
短句来源
  “ulsi circuit”译为未确定词的双语例句
     Study on Ultra Thin Gate Dielectric Film Used in ULSI Circuit
     用于ULSI电路的超薄栅介质膜研究
短句来源
  相似匹配句对
     Circuit Classical
     电路经典
短句来源
     In-Circuit Testing
     在线测试技术
短句来源
     Study on Ultra Thin Gate Dielectric Film Used in ULSI Circuit
     用于ULSI电路的超薄栅介质膜研究
短句来源
     With the high speed development of computer , the integrated circuit as the basis of computer have been developed from VLSI to ULSI .
     随着科学技术的飞速发展,计算机不断更新换代,存储容量在不断的增长,作为其基础元件的集成电路已由超大规模(VLSI)向甚大规模(ULSI)阶段发展。
短句来源
     Planarization Technology for ULSI
     超大规模集成电路的平坦化技术
短句来源
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The metal-oxide-semiconductor field-effect transistor (MOSFET) is the dominant device used in ul- tra-large-scale integrated (ULSI) circuits. We present major milestones in the development of MOSFET from inception to ULSI, and discuss future trends of MOSFET performance.

金属氧化物半导体场效应晶体管(MOSFET)是用于ULSI中的重要器件。现在,我们评述从MOSFET的起始,直到在ULSI中应用时期的主要里程碑,并且讨论MOSFET功能的未来趋势。

This paper presents a general algorithm for multi-way digital circuit partitioning.It can be applied to different optimizatiom functions. Based on the general net cut model. a well designed discrete penalty function is incorporated into the original cost functions to take consideration of the potential interaction between free cell's exchange. Experimental results show that not only the proposed algorithm outperforms the multi-way version of F-M's slgorithm,but also the erratic defect of F-M's algorithm...

This paper presents a general algorithm for multi-way digital circuit partitioning.It can be applied to different optimizatiom functions. Based on the general net cut model. a well designed discrete penalty function is incorporated into the original cost functions to take consideration of the potential interaction between free cell's exchange. Experimental results show that not only the proposed algorithm outperforms the multi-way version of F-M's slgorithm,but also the erratic defect of F-M's algorithm is reduced in part. Since we adopt the improved bucket sorting techniques,the algorithm remains the linear time complexity that F-M's algorithm had achieved and thus can be applied to partition VLSI and ULSI circuits.

本文提出了一个通用的数字电路的多块划分的算法.该算法能适用于不同的优化目标函数.我们在基于组迁移算法线网割(netcutmodel)模型基础上,在费用函数中引进一个有效的离散罚函数以考虑单元移动的潜在增益.使新算法较原来的F-M算法有较大的提高,同时还一定程度上减少了组迁移算法所固有的漂移性.由于采用了改进的桶排序技术,新算法还保持了F-M算法原有的线性时间复杂性.因而能适用于VLSI以及ULSI电路线网的划分.

The thermal performance for a multi-objective electrica l optimized five-layer metallization interconnect structure of 0 15μm generatio n ULSI circuits is simulated by using the finite element method based on softwar e ANSYS.The thermal distribution and temperature increase of this interconnect s ystem are obtained for Al and Cu metallization with different dielectric materia ls (SiO 2 or low k dielectric xerogel).The simulation results are compared with the results from Stanford University for...

The thermal performance for a multi-objective electrica l optimized five-layer metallization interconnect structure of 0 15μm generatio n ULSI circuits is simulated by using the finite element method based on softwar e ANSYS.The thermal distribution and temperature increase of this interconnect s ystem are obtained for Al and Cu metallization with different dielectric materia ls (SiO 2 or low k dielectric xerogel).The simulation results are compared with the results from Stanford University for another five-layer metallization interconnect.The influences of the employment of low k dielectric on the hea t dissipation of the metallization interconnect system are discussed.The feature s of ANSYS are briefly introduced,especially its advantages on thermal simulatio n.

应用基于有限元算法的软件 ANSYS对 0 .15 μm工艺条件下的一个 U L SI电路的五层金属互连结构进行了热特性模拟和分析 .模拟了这个经多目标电特性优化了的互连结构在采用不同金属 (Cu或 Al)互连线及不同电介质 (Si O2 或低介电常数材料 xerogel)填充条件下的热分布情况 ,计算了这些条件下此互连结构的温度分布 .并将结果与 Stanford大学模拟的另一种五层金属布线结构的热特性结果进行了比较 .讨论了低介电常数材料的采用对于互连结构散热情况的影响 .此外 ,还简要地介绍了 ANSYS的性能和用于热模拟的原理和特色

 
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