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burnout energy
相关语句
  抗烧毁能量
     This paper analyses the principal parameters of this diode: The height of barrier, conversion loss, and burnout energy. The fabrication technique is described.
     本文分析了UHF混频二极管的势垒高度、变频损耗和抗烧毁能量等主要参数,概述了制造技术.
短句来源
  “burnout energy”译为未确定词的双语例句
     0.92-3.5erg ranges of the device burnout energy are obtained from the experimental results, showing fairly anti-burnout performance of the Al-gate GaAs MESFET.
     实验结果表明,脉冲峰值电压约为30伏时,器件的烧毁能量值集中在0.92至3.6尔格范围内,这表明铝栅GaAs MESFET有较好的抗烧毁性能.
短句来源
     RELATIONSHIPS OF DIODE FAILURE AND BURNOUT ENERGY THRESHOLDS WITH RF PARAMETERS
     二极管失效和烧毁阈值与电磁波参数关系
短句来源
     By means of the program mPND1D (one dimensional modeling for PN junction devices), the diode failure and burnout energy absorbed have been calculated for different EMP pulsed voltage sources, and the results are analyzed preliminarily.
     利用半导体 PN结器件一维模拟程序 m PND1 D,计算了二极管在不同电磁脉冲电压源条件下的失效和烧毁时器件吸收的能量 ,并对结果作了初步分析。
短句来源
     Methods:Deep interviews were conducted with 47 middle school teachers to explore the indigenous concept,which included three aspects:passion burnout,energy burnout and professional self-effectiveness burnout.
     方法首先采用自下而上的思路对47名中学教师进行深入访谈,探索该职业领域工作倦怠的本土化定义;
短句来源
  相似匹配句对
     The energy of D.
     根部能量的积累随放牧强度的提高而逐渐减少。
短句来源
     The energy of the N-
     N粒子的散射态和束缚态的能量分别为
短句来源
     RELATIONSHIPS OF DIODE FAILURE AND BURNOUT ENERGY THRESHOLDS WITH RF PARAMETERS
     二极管失效和烧毁阈值与电磁波参数关系
短句来源
     Experimental Analysis of the Energy Burnout Property for the Low Noise AI-Gate MESFET
     低噪声铝栅MESFET能量烧毁性质的实验分析
短句来源
     Job Burnout of Nurses
     MBI量表在护士工作倦怠研究中的测试
短句来源
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Si UHF mixer diodes are used in all-channel TV sets. This paper analyses the principal parameters of this diode: The height of barrier, conversion loss, and burnout energy. The fabrication technique is described. Finally, the research and application results are given and compared with analogical products made in Japan.

硅UHF混频二极管用于全频道电视机.本文分析了UHF混频二极管的势垒高度、变频损耗和抗烧毁能量等主要参数,概述了制造技术.最后,给出研究和使用结果,并与日本同类产品作了比较.

The experimental analysts of the energy burnout property for Al-gate MESFET has been made in this paper. The device damage has been investigated in the case of positive and negative pulse and other operating conditions. 0.92-3.5erg ranges of the device burnout energy are obtained from the experimental results, showing fairly anti-burnout performance of the Al-gate GaAs MESFET.

本文对铝栅GaAs MESFET的能量烧毁性质作了实验分析.研究了在正脉冲、负脉冲以及各种工作状态下器件的损害情况.实验结果表明,脉冲峰值电压约为30伏时,器件的烧毁能量值集中在0.92至3.6尔格范围内,这表明铝栅GaAs MESFET有较好的抗烧毁性能.

By means of the program mPND1D (one dimensional modeling for PN junction devices), the diode failure and burnout energy absorbed have been calculated for different EMP pulsed voltage sources, and the results are analyzed preliminarily.

利用半导体 PN结器件一维模拟程序 m PND1 D,计算了二极管在不同电磁脉冲电压源条件下的失效和烧毁时器件吸收的能量 ,并对结果作了初步分析。

 
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