A Pb0.97Cd0.03S0.9Se0.1diode laser with pulsed operation at up to a temperature of 162 K and a PbS0.53Se0.47 diode laser with CW operation at 28 K have been fabricated by a horizontal unseeded vapor growth technique, self diffusion and mesa stripe-geometry.
The relationship between thermal properties and crystal structure was discussed. 4.3W output power at 1040nm can be obtained when pumped by 11W fibre-coupled laser diode at 977nm, and the slope efficiency is 48%;
In addition, it can be easily applied in optic-communications. So it draws more and more attentions. The thesis details the experiment of the Yb3+-doped double-clad fiber laser, which is pumped by Laser Diodes and works in a F-P cavity.
In addition, it can be easily applied in optic-communications. So it draws more and more attentions. The thesis details the research of the Yb~(3+) doped double clad fiber laser used in master-oscillator power amplifier(MOPA) system which pumped by Laser Diodes.
The main technology for high power fiber lasers, including laser diode beam shaping, fiber laser pumping techniques, and amplification systems, are discussed in detail.
Lasing in Cr:ZnSe single crystals is implemented with an efficiency of 31% and an output power of 186 mW using laser diode pumping at a wavelength of 1.77 μm.
It is concluded that NYF:Er3+ crystals are promising as active media for tunable lasers with laser diode pumping.
Indium arsenide/gallium arsenide structures with vertically coupled quantum dots imbedded in the active zone of a laser diode are investigated by deep-level transient spectroscopy (DLTS), and the capacitance-voltage characteristics are analyzed.
A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described.
A continuous-wave lasing at 1 μm was excited by the radiation of semiconductor laser diodes at room temperature in nanocrystalline ceramics Y2O3 doped with Nd3+ and Yb3+ ions.
The heterostructures obtained are used to fabricate laser diodes.
It is shown that the absorption spectrum of NYF:Er crystals contains wide bands (790-801 and 965-980 nm) corresponding to the emission range of laser diodes.
The proposed model is shown to faithfully describe experimental data obtained for laser diodes based on InGaAs quantum dots in an AlGaAs/GaAs matrix, as well as InAs quantum dots in an InGaAs/InP matrix.
Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution