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二极管激光器     
相关语句
  diode laser
     1.3 μm Distributed Feedback Diode Laser Module
     1.3μm分布反馈二极管激光器组件
短句来源
     A Pb0.97Cd0.03S0.9Se0.1diode laser with pulsed operation at up to a temperature of 162 K and a PbS0.53Se0.47 diode laser with CW operation at 28 K have been fabricated by a horizontal unseeded vapor growth technique, self diffusion and mesa stripe-geometry.
     用水平无籽晶气相生长技术、自扩散和台面条形结构制成了直到162K脉冲运转的Pb_(0.97)Cd_(0.03)S_(0.9)Se_(0.1)二极管激光器和28K下CW运转的PbS_(0.53)Se_(0.47)二极管激光器
短句来源
     Lead-salt diode laser at 3~5μm wavelength region
     3~5μm波段铅盐二极管激光器
短句来源
     Horizontal unseeded vapor growth (HUVG) of a Pb_(1-x)Sn_xTe diode laser
     水平无籽晶气相生长的Pb_(1-x)Sn_xTe二极管激光器
短句来源
     Hair removal using an 800-nm diode laser: Comparison at different treatment intervals of 45,60,and 90 days
     用800nm二极管激光器脱毛:比较不同治疗间隔45d,60d和90d的疗效
短句来源
更多       
  laser diode
     The characteristic of a continuous-wave(CW) laser diode(LD) end-pumped Nd:YVO4 crstal electro-optic Q-swtiching with pulse repetition rate from 20 to 5000 Hz laser is presented in this paper.
     文章介绍了连续二极管激光器(LD)端面泵浦Nd:YVO4晶体,在200-5000Hz电光调 Q的情况下的激光输出特性。
短句来源
     The characteristic of a continuous-wave (CW) laser diode (LD) end-pumped Nd:YVO crstal electro-optic Q-swtiching with pulse repetition rate from 20 to 5000 Hz laser is presented in this paper.
     本文描述了连续二极管激光器(LD)端面泵浦Nd:YVO4晶体,在200-5000 Hz电光调Q的情况下,激光输出特性的研究。
短句来源
     The relationship between thermal properties and crystal structure was discussed. 4.3W output power at 1040nm can be obtained when pumped by 11W fibre-coupled laser diode at 977nm, and the slope efficiency is 48%;
     在10%的Yb:YAB晶体中,以入射功率为11W,波长为977nm的光纤耦合二极管激光器泵浦得到4.3W的基频光波输出,斜效率为48%;
短句来源
     Quasi-CW laser output at the low temperature was obtained from Yb 3+∶phosphate glass pumped by 940 nm laser diode.
     在低温下采用 940nm的二极管激光器抽运Yb3 + ∶磷酸盐玻璃获得了准连续激光输出。
短句来源
     Thermal analysis of high average power laser diode arrays
     高平均功率面阵二极管激光器散热分析
短句来源
更多       
  diode lasers
     We report the tuning characteristics of 16 μm OW PbSnSe diode lasers.
     本文报道了16μm连续波PbSnSe二极管激光器的调谐特性.
短句来源
     CO 2 laser,flash pumped Nd:YAG lasers,diode pumped Nd:YAG lasers and diode lasers used in foreign laser cladding.
     国外激光熔覆使用的激光器类型有CO2 激光器、灯泵浦Nd :YAG激光器、二级管泵浦Nd:YAG激光器和二极管激光器
短句来源
     With three diode lasers emitting in the near infrared (780 nm, 823 nm, and 825 nm) synthetic wavelengths of approximately. 15 μm and 290 μm could be achieved.
     3个二极管激光器分别发射780nm、823nm和825nm3种近红外光波,可以得到2个近似15μm和29μm的合成波长.
短句来源
     We discuss the probability of reaIization ofTm:YAG tunable lasers with Iow threshold, high efficiency, and high output, which willbe pumped by 680 nm diode lasers in the near future as well.
     本文还讨论用680nm二极管激光器泵浦,实现低阈值、高效率、高输出Tm:YAG可调谐激光器的可能性。
短句来源
     The four-pass pumped coupling system of the high power diode lasers stack
     高功率二极管激光器面阵四通抽运耦合系统
短句来源
更多       
  laser diodes
     In addition, it can be easily applied in optic-communications. So it draws more and more attentions. The thesis details the experiment of the Yb3+-doped double-clad fiber laser, which is pumped by Laser Diodes and works in a F-P cavity.
     本文研究以二极管激光器做泵浦源,以掺Yb3+的双包层光纤为增益介质,采用F-P腔型的光纤激光器。
短句来源
     In addition, it can be easily applied in optic-communications. So it draws more and more attentions. The thesis details the research of the Yb~(3+) doped double clad fiber laser used in master-oscillator power amplifier(MOPA) system which pumped by Laser Diodes.
     本文研究以二极管激光器做泵浦源,以掺Yb3+的双包层光纤为增益介质,种子源放大技术实现的脉冲光纤激光器。
短句来源

 

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  diode laser
Determination of Individual Species by Liquid Chromatography Combined with an Element-Selective Detector Based on Diode Laser At
      
A new principle of the diode laser frequency tuning has been developed and implemented.
      
Visible luminescence of the fluoride glass ZBLAN with thulium and ytterbium under IR diode laser pumping
      
Visible luminescence of thulium in the fluorozirconate glass ZBLAN sensitized with ytterbium is studied experimentally under IR diode laser pumping.
      
The absorption line profiles of water vapor in binary mixtures with diatomic molecules H2, N2, and O2 have been recorded on a diode laser spectrometer.
      
更多          
  laser diode
The main technology for high power fiber lasers, including laser diode beam shaping, fiber laser pumping techniques, and amplification systems, are discussed in detail.
      
Lasing in Cr:ZnSe single crystals is implemented with an efficiency of 31% and an output power of 186 mW using laser diode pumping at a wavelength of 1.77 μm.
      
It is concluded that NYF:Er3+ crystals are promising as active media for tunable lasers with laser diode pumping.
      
Indium arsenide/gallium arsenide structures with vertically coupled quantum dots imbedded in the active zone of a laser diode are investigated by deep-level transient spectroscopy (DLTS), and the capacitance-voltage characteristics are analyzed.
      
A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described.
      
更多          
  diode lasers
The principles of stabilization of the operating modes of diode lasers and the circuit designs for joint temperature and current stabilization and radiation power control are described.
      
The factors responsible for the short service life of diode lasers are discussed, and recommendations for their application are given.
      
A temperature stabilization system for diode lasers
      
A system is described that measures the temperature of diode lasers and stabilizes it with an accuracy within ±0.005°C and ±0.02°C, respectively.
      
Spectrum-tunable liquid-crystal polarization isolator for diode lasers
      
更多          
  laser diodes
A continuous-wave lasing at 1 μm was excited by the radiation of semiconductor laser diodes at room temperature in nanocrystalline ceramics Y2O3 doped with Nd3+ and Yb3+ ions.
      
The heterostructures obtained are used to fabricate laser diodes.
      
It is shown that the absorption spectrum of NYF:Er crystals contains wide bands (790-801 and 965-980 nm) corresponding to the emission range of laser diodes.
      
The proposed model is shown to faithfully describe experimental data obtained for laser diodes based on InGaAs quantum dots in an AlGaAs/GaAs matrix, as well as InAs quantum dots in an InGaAs/InP matrix.
      
Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution
      
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