The synthesize method of Li-Ni-Co-Mn-O compound and the effect of Li:Me(Me= Ni+Co+Mn)and Me on its character, the function of Ni and Co, Mn in the Li-Ni-Co-Mn-O compound were explained. At last, the surface modification and doping of Li-Ni-Co-Mn-O compound and its application prospect were discussed in the thesis.
Ti6Al4V alloy was treated by helium/oxygen plasma based ion implantation (He/O_2-PBII), surface treating– annealing, sputtering by argon ions and corrading, for Helium/oxygen implantation alloy samples.
By using NH_4F/H_2O_2 as the surface passivant for p-CZT crystals,the C-V characteristics of pCZT wafers before and after passivation surface treatments are investigated comparatively.
The results of measurements of the rates of oxygen uptake and the formation of gaseous products at the initial stage of the oxygen and air plasma surface treatment of a poly(ethylene terephthalate) (PETP) fabric are reported.
The results of measurements on the composition and the formation rates of gaseous products in the surface treatment action of polypropylene with a low-temperature dc discharge plasma in a nitrogen-oxygen mixture are reported.
Inverse gas chromatography (IGC) was used to investigate the surface free energy of CaCO3 after surface modification and to optimize the monolayer content of coupling agents.
These experiments show that surface functionalization of polyethylene films by blending SMA and then surface grafting of PEG is feasible, which suggest an effective and simple route for PE surface modification via blending and grafting.
On the other hand, as results of surface treating, in the surface layer the toughness declines and the expanding coefficient ascendes; the latter change caused the strengthening of the tensile and compressive stress during the cycling.
The effect of surface treatments on the main characteristics of excitons in the subsurface region of semiconductors (for GaAs), as well as the spatial distribution of main characteristics of excitons (for CdS), was studied.
The effect of different surface treatments of GaAs/In(Ga)As/GaAs quantum-confined heterostructures on the electroluminescence efficiency of Schottky diodes based on these structures is investigated.
It is believed that finding new methods of deposition surface treatments is worth further considering if we hope to deposit and increase one of desired percentage ofbond structure in the films.