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highly doped
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  高掺杂
    Using highly doped Yb3+ fiber for the first time in China, passively mode-locked by NPE, we generated pulses with bandwidth of 6nm, repetition rate of 20MHz. The center wavelength was 1045.58nm, and the maximum output power was 25mW.
    在国内首次采用高掺杂Yb“+光纤,实现了掺Yb3+光纤环形激光器的NPE被动锁模,锁模中心波长1045.58nln,光谱宽度6nln,重复频率20MHz,输出最大功率为25mw。
短句来源
    ρC_1 occurs between the contact metal and its underlying highly doped semiconductor layer (NDc) after alloying.
    ρ_(c_1)是合金与其下在合金化后形成的高掺杂层间的比接触电阻。
短句来源
    The results show that in highly doped substrate case, the carrier density and subthreshold current are lowered and threshold voltage is raised considerably due to QME, but the subthreshold swing factor (S) is entirely not influenced.
    计算结果表明:在高掺杂浓度衬底时,量子化效应导致载流子浓度和亚阈区电流的显著降低和开启电压的升高,而对亚阈区斜率因子(S)没有明显的影响。
短句来源
    Based on thorough analysis on various factors affecting a metal-semiconductor Schottky barrier,several approaches are discussed in this paper with the aim of reduction of the height of the Schottky barrier. Specifically,by using laser induced chemistry adulteration technique in the gas environment to incorporate a thin highly doped layer at the interface of a metal-semiconductor,the height of the Schottky barrier can be markedly reduced.
    通过深入地分析影响金属 -半导体肖特基势垒的各种因素 ,探讨了几种降低肖特基势垒高度的途径 ,其中 ,特别是通过汽相激光诱导化学掺杂技术在金属 -半导体界面上制作一足够薄的高掺杂层 ,可以使肖特基势垒高度得到显著降低。
短句来源
  “highly doped”译为未确定词的双语例句
    A NEW METHOD FOR DETERMINATION OF ENERGY GAP AND MINORITY-CARRIER RECOMBINATION LIFETIME IN HIGHLY DOPED EMITTER
    重掺杂发射区中禁带宽度和少子复合寿命的确定方法
短句来源
    The Influence of Stress on Mechanical Performance of Highly Doped Square-Shaped Silicon Diaphragm
    应力对硅悬空薄膜的机械灵敏度的影响
短句来源
    Properties and productions highly doped with boron based on updated PCVD process
    改进的PCVD工艺制造高掺硼材料的性能研究
短句来源
    In Charter 3 three key sections of fabrication process are discussed including the etching of pyrex7740, the selection and making of infrared absorbing film, the auto-stop etching for forming a thin silicon membrane highly doped by boron diffusion.
    论文的第三章主要探讨了关键的分步工艺:pyrex7740刻蚀、红外吸收层选择与制作、浓硼自停止制作薄硅膜; 并且叙述了器件制作的工艺流程。
短句来源
    Taking account of the up-conversion and cross-relaxation effects of cooperation, the spectrum analysis of highly doped EDWA can be carried out over a wider frequency band.
    由于考虑了协同上转换和交叉弛豫效应,该算法能够对高掺杂的EDWA进行较宽频谱的分析.
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  highly doped
Absorption spectra have been measured in highly doped YAlO3∶Er (50 %) in the wavelength range from 300 nm up to 2μm.
      
Novel Cu/Cr/Ge/Pd Ohmic Contacts on Highly Doped n-GaAs
      
A subsequent experiment was performed to determine the effect of p-type epi-regrowth on the highly doped p-well surface.
      
The experimental results also show that the transition reaction to low resistivity phase NiSi is retarded on highly doped Si substrates regardless of the initial Ni film thickness.
      
Reaction characteristics of ultra-thin Ni films (5 nm and 10 nm) on undoped and highly doped (As-doped and B-doped) Si (100) substrates are investigated in this work.
      
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An inverse proportionality between the specific contact resistance ρ_c of n-type GaAs and its carrier concentration ND has been shown by a lot of experimental facts. In this paper, a comment is made on the various viewpoints about this phenomenon in the literatures and their shortages are pointed out as well. According to the band structure of ohmic contact, a new model, assuming that ?_c consists of two parts (ρ_c_2 and ρ_C_2), is put forward. ρC_1 occurs between the contact metal and its underlying highly...

An inverse proportionality between the specific contact resistance ρ_c of n-type GaAs and its carrier concentration ND has been shown by a lot of experimental facts. In this paper, a comment is made on the various viewpoints about this phenomenon in the literatures and their shortages are pointed out as well. According to the band structure of ohmic contact, a new model, assuming that ?_c consists of two parts (ρ_c_2 and ρ_C_2), is put forward. ρC_1 occurs between the contact metal and its underlying highly doped semiconductor layer (NDc) after alloying. ρ_c_2 is brought about by a barrier appeared due to the concentration difference between the NDc and the active layer ND. If the alloying process is optimized and thus the NDc is very high, then ρC_1 is very small and ρC_2 gives the main contribution to ρc. In this case an inverse proportionality between ρc and N_Dcan be found, if N_D < Nc (Nc is the effective state density). When ND > Nc, ρC_2 can be neglected due to the disappearance of the barrier. In this case, ρc is determined by ρ_c_1, which should depend only on N_Dc. Based on the above description, a theoretical deduction was carried out and the result not only can explain the experimental data of n-type GaAs ohmic contact very well, but also the experimental facts of p-type Si ohmic contact presented in the literatures. We believe that this model can also be extended to the case of other III-V compound semiconductors, such as p-type GaAs and P-type InP etc.

n型GaAs欧姆接触的比接触电阻ρ_c与有源层浓度N_D有反比关系,这已为很多实验事实所证明。文献中对这一现象有各种解释。本文对文献中的各种解释模型进行了分析,指出不足之处。提出ρ_c应由两部分ρ_(c_1)和ρ_(c_2)组成。ρ_(c_1)是合金与其下在合金化后形成的高掺杂层间的比接触电阻。此外,在这高掺杂层与原来有源层间有载流子浓度差,因而形成一个势垒φ_2,它带入ρ_(c_2)。当合金化良好,高掺杂层浓度N_(Dc)很高,因而ρ_(c_1)很小。这时ρ_(c_2)是ρ_c的主要组成部分。只是在这种情况下,即当N_D小于有效态密度N_c时,ρ_c与N_D才有反比关系。如N_D>N_c,由于φ_2的消失而ρ_(c_2)可忽略,ρ_c由ρ_(c_1)决定。这时ρ_c将决定于N_(Dc),而与N_D无关。所得ρ_(c_1)与ρ_(c_2)的计算式不但能很好解释n型GaAs欧姆接触的实验结果,而且也解释了文献中p-Si的欧姆接触实验结果。认为所述模型也对p型GaAs,p型InP和其他Ⅲ-V族化合物等适用,并结合文献中的实验数据进行了讨论。

Both normally-on and aormally-off TEGFET have been fabricated from the modulation-doped Ga1-xAlxAs/GaAs heterostructure grown by MBE. For normally-on transistors with single and dual gate, transcoaductances (gm) of 90mS/mm with 1μm gate length and of 75 mS/mm with 2 μgate length are achieved at 300K, respectively; the later is superior to that of ioa-implaated MESFET or MISSBFET with the same pattern and size using highly-doped channel. Upon cooling to 77 K, the transconiuctance of the dual...

Both normally-on and aormally-off TEGFET have been fabricated from the modulation-doped Ga1-xAlxAs/GaAs heterostructure grown by MBE. For normally-on transistors with single and dual gate, transcoaductances (gm) of 90mS/mm with 1μm gate length and of 75 mS/mm with 2 μgate length are achieved at 300K, respectively; the later is superior to that of ioa-implaated MESFET or MISSBFET with the same pattern and size using highly-doped channel. Upon cooling to 77 K, the transconiuctance of the dual gate D-TEGFET increases by a factor of 1.7. The gm of E-TEGFET with dual gate is 63mS/mm at the gate bias of V s= 0.6V and increases to 88 mS/mm at 77 K. It has also been observed that the characteristics of the device were degenerated and changed dramatically with gate bias when parallel conductance occured.

制备了耗尽型和增强型TEGFET,耗尽TEGFE单栅长1μm,其室温跨导g_m=90mS/mm;双栅栅长均为2μm。g_m=75mS/mm。双栅的结果优于本实验室相同结构与尺寸的离子注入型常规双栅MESFET与高掺杂沟道MIS结构肖特基势垒FET的实验结果。双栅耗尽型器件在77K下跨导增加到1.7倍。双栅增强型的TEGFET在室温0.6V栅偏压下,g_m=63mS/mm,在77K下增加到1.4倍。如器件中出现平行电导时,则器件性能退化,它不但使跨导降低,且随栅编压变化很大。文中讨论了这一现象。

Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor. Using temperature characteristics obtained from the reverse diffusion current of p-n junction and by means of linear extrapolation, a new method for determination of the energy gap at OK is presented. Based on the carrier Fermi-Dirac statistic distribution, a method for determination of minority-carrier recombination lifetime in highly doped emitter is presented. This test method...

Energy gap and minority-carrier recombination lifetime are important physical parameters in the emitter of silicon transistor. Using temperature characteristics obtained from the reverse diffusion current of p-n junction and by means of linear extrapolation, a new method for determination of the energy gap at OK is presented. Based on the carrier Fermi-Dirac statistic distribution, a method for determination of minority-carrier recombination lifetime in highly doped emitter is presented. This test method is simple and can be used in practice.

禁带宽度和少子复合寿命是硅晶体管发射区中重要的物理参数。本文利用p-n结反向扩散电流的温度特性和借助于线性外推法,提出了一种确定绝对零度时禁带宽度的新方法。由于发射区重掺杂,本文考虑了载流子的费米-狄拉克统计分布。提出了确定发射区中少子复合寿命的方法。该方法简便实用。

 
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