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limit of diffusion
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  “limit of diffusion”译为未确定词的双语例句
     The results of research show that the key problem of sintering the series of material is how to reduce the effect of mutual limit of diffusion between elements and immiscible element so as to ensure that immiscible element can be solid-solubilized into main element rapidly, effectively and uniformly.
     研究结果表明,该系列材料的烧结关键问题是如何降低非互溶组元之间的相互抑制扩散的影响,保证需要溶入主组元中的非互溶性组元能快速有效地均匀固溶入主组元中。
短句来源
     Immobilized SOD were obtained by absorption, entrapment and covalent cross-linking, and all the immobilized enzyme activities were low. It appears that reaction rate of the copper and zinc containing superoxide dismutase with superoxide anion is near the limit of diffusion control.
     采用吸附、包埋、共价交联等方法固定化超氧化物歧化酶(SOD)所得固定化酶活力回收都不高,表明酶的催化反应速率受超氧阴离子自由基(O_2~-)扩散速率的控制。
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  相似匹配句对
     On Limit
     极限概念的辩证法探讨
短句来源
     Scientization and the Limit
     科学化及其限度
短句来源
     Limit of Rights
     权利的限度
短句来源
     On the Proving of the Limit
     关于极限"非汉字符号"(1+x)~(1/x)=e的证明
短句来源
     Nonlinear Diffusion
     非线性扩散
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  limit of diffusion
The high-rigidity limit of diffusion theory is used and nonlinear interactions between particles and interplanetary magnetic fields are considered according to nonlinear-closure approximation theory.
      
The edge pattern is then set by the limit of diffusion from the source.
      
Fibrinogen, fibrin, and PAR-1 bind rapidly to thrombin with rates approaching the theoretical limit of diffusion control.
      


Immobilized SOD were obtained by absorption, entrapment and covalent cross-linking, and all the immobilized enzyme activities were low.It appears that reaction rate of the copper and zinc containing superoxide dismutase with superoxide anion is near the limit of diffusion control.Using the sodium aiginate entrapping method, the immobilized Cu***********..Zn-SOD does not show any activity, after dissolving the immobilized enzyme in phophate buffer, the enzyme regains its activity.

采用吸附、包埋、共价交联等方法固定化超氧化物歧化酶(SOD)所得固定化酶活力回收都不高,表明酶的催化反应速率受超氧阴离子自由基(O_2~-)扩散速率的控制。用海藻酸钠包埋SOD,固定化酶不表现活力,破固定化后所得的糊状物却有很高的活力。用戊二醛交联所得的固定化酶活力回收率也很低,表明ε-NH_3~+的正电荷是酶活力所必需。

The Integrated Emission Standard of Air Pollutants stipulates the requirements of emission of 33 air pollutants,as well as its implementation.Each stationary pollution source must comply with all of three indexes.Among them,the maximum allowable concentration limits are set up based on the emission data from different sources and Best Practical Technology(BPT),the emission rate limits are formulated according to the requirement of environmental quality and the medium meterollogical condition in most...

The Integrated Emission Standard of Air Pollutants stipulates the requirements of emission of 33 air pollutants,as well as its implementation.Each stationary pollution source must comply with all of three indexes.Among them,the maximum allowable concentration limits are set up based on the emission data from different sources and Best Practical Technology(BPT),the emission rate limits are formulated according to the requirement of environmental quality and the medium meterollogical condition in most areas of Chian,and the control limits of diffusion source are determined by the requirement of ambient air concentration around pollution source,the concentration is based on the requirement of the environmental quality standard.After a careful investigation and observation in certain area,it proves that standard is practical and feasible.

我国《大气污染综合排放标准》规定了33种大气污染物的排放限值和执行要求。标准提出了一个污染源必须同时遵守最高允许排放浓度;最高允许排放速率和无组织排放监控浓度限值三项限制指标。以众多企业的排放数据和“最佳实用治理技术”为依据制定排放浓度限值;以环境质量要求和全国大部分地区的中性气象条件为依据,经计算后确定排放速率限值;以污染源周界环境空气浓度达到质量标准要求确定无组织排放限值。经过一定范围的调查检验后,表明该标准具有基本适宜的宽严程度。

The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100)...

The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N 2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si(111) surface in both air-saturated and N 2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6~34.1℃. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2℃, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

定义了硅表面上硅和二氧化硅的横向腐蚀速率 ,系统地测量了硅 (10 0 )晶面上的硅和二氧化硅在 4 0 %(质量分数 )氟化铵水溶液中的横向与纵向腐蚀速率 ,并和硅 (111)晶面上的测量结果进行了对比 .对比结果表明 ,尽管两种晶面上的硅和二氧化硅的腐蚀速率有明显的差别 ,其相应的表观活化能在误差范围内相同 .实验中还发现 ,溶液的温度为 38.2℃时 ,硅腐蚀过程中形成的气泡对硅的腐蚀速率有显著的影响 :开始时加速硅的腐蚀 ;但随着气泡在硅 /溶液界面的聚集 ,阻碍硅的腐蚀 .

 
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