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junction device
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  连接装置
     In the structure measures, it proposes the overlap sheet steel rubber abutment as support installment, the spring as junction device. They forms an absorption of shock control system by the roof garden TMD supporting on the main structure.
     在构造措施上,提出用叠层钢板橡胶支座作为支承装置,用弹簧作为连接装置,将屋顶花园TMD支承在主结构上形成一个减震控制体系。
短句来源
  结器件
     THERMAL STABILITY OF SIMULTANEOUSLY FORMED TiN_xO_y/TiSi_2 FOR SHALLOW JUNCTION DEVICE APPLICATIONS
     同时形成用于浅结器件的TiN_xO_y/TiSi_2的热稳定性
短句来源
     Determination of Parameters for P-N Junction Device Modeling
     P-N结器件模拟参数的确定
短句来源
     This article mainly introduce the composing part of the Quasi-Optical SIS receiver for millimeter wave, which is working on 4K temperature and designed by ourselves, and according to the characteristic index of our prepared SIS junction device, we calculate and design the integrated chip for 300GHz wave range, fabricated with planar antenna and junction.
     本文主要讨论了我们自行研究设计工作在4K温度,准光学系统的毫米波超导SIS接收机的组成部件,根据我们制备的超导SIS隧道结器件的特性指标,计算设计了300GHz波段的超导接收机天线和结的集成芯片.
短句来源
     Using this method,Al-Si interdiffusion phenomenon which causes the failure for shallow junction device can be restricted effectively.
     该法能有效地抑制导致浅结器件失效的 Al-Si 互扩散现象,从而具有良好的结特性。
短句来源
     AES, SEM, specific contact resistance and PN junction reverse currem investigations showthat Al-Si interdiffusion phenomenon which causes the failure for shallow junction device canbe restricted effectively,therefore ohmic contact with good junction property can be achieved.
     通过俄歇电子能谱、扫描电子显微镜、接触电阻率和PN结反向电流的研究证实该法能有效地抑制导致浅结器件失效的Al-Si互扩散现象,从而达到保持良好结特性的欧姆接触.
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  “junction device”译为未确定词的双语例句
     Enhancement of Photoelectric Conversion by Tilting a Polycrystalline Silicon p-n Junction Device
     通过倾斜多晶硅p-n结光电器件提高光电转换性能
短句来源
     Comparing of the existed junction device, this paper has added skirt, converted the position of encapsulation, defined the carrelation parameter of internal gearing by caculating, determined the sizes of butt joint referencing the existedjunction device and adopted finite element analysis software to check the strength of structure component.
     在新的连接形式中,增设了裙边,改变了密封位置,通过计算确定了内啮合传动齿轮装置的相关参数,并采用大型有限元分析软件ANSYS对裙边和锁紧环的强度进行了校核。
短句来源
     Three-point sphere brace is the junction device of the converter furnace shell and loop. It plays an important role during the process of converter.
     三点支承是连接炼钢转炉炉壳和托圈的支承装置,在转炉的倾动过程中起着重要的作用。
短句来源
     Based on the idea of tilting a photoelectric conversion device [1] , a po lycrystallin e silicon p-n junction device was tilted to make the incident light upon the de vice with an angle of 75° to the normal of the device surface, resulting in the enhancement of infrared absorpti on through infrared internal reflection inside the device.
     本研究针对多晶硅 p- n结光伏器件开展工作。 基于倾斜光电转换器件的思想 [1 ] ,倾斜本研究采用的光电转换器件使入射光线与器件表面法线成 75度的夹角 ,从而使红外光在器件内形成多次全反射。
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  junction device
A ten-junction device exhibited linear voltage building with an opencircuit voltage of 1.8 V.
      
For a general case, the admittance of a junction device can then be obtained via a numerical integration of the differential equation.
      
This Y-junction device, unlike other adiabatic Y-junctions, has the advantage that it may be directly written into a planar medium with homogeneous saturable nonlinearity by a strong light beam.
      
The best junction device is the one which reproduces the construction of the coaxial capacitor.
      
Quantum-state control of an artificial two-level system wasdemonstrated in a small-Josephson-junction device: a single-Cooper-pair box.
      
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Al-Si ohmic contact made by CW CO_2 laser irradiation instead of sintering is report-ed.Laser annealing having the feature of transient annealing,Al-Si interdiffusion phe-nomenon which causes the failure for shallow junction device can be avoided or decreas-ed significantly,therefore ohmic contact with good junction property can be achieved.This method offers a way for improving the integrated density of LSI.

本文报道了用连续CO_2激光辐照代替热合金化做Al-Si欧姆接触.由于激光退火具有瞬时退火的特点,避免或是明显地减少导致残结器件失效的Al-Si互扩散现象,从而达到保持良好结特性的欧姆接触.为提高大规模集成电路的集成度提供了一条途径.

A Simple and direct method,Al-Si ohmic contact achieved by utilizing capacitance dischar- ging instead of conventional sintering,is introduced.Using this method,Al-Si interdiffusion phenomenon which causes the failure for shallow junction device can be restricted effectively.

本文报导了一种用电容放电代替常规热合金化实现 Al-Si 欧姆接触的简捷方法。该法能有效地抑制导致浅结器件失效的 Al-Si 互扩散现象,从而具有良好的结特性。

Measurement of Metal-Glass-Semiconductor (MGS) capacitances as a function of bias voltage is developed. Thinner glass film is manufactured by elec trophoretic method. The film properties are investigated by IMA (ion microprobe analyzer) and the curve-fitted resultz are given by computer. The result shows that the density of negative charge in ZnO glass film is dependent on the fused conditions of atmosphere and temperature treatment. Na~+ mobile cations are piled up near surface with the quantity lowered in...

Measurement of Metal-Glass-Semiconductor (MGS) capacitances as a function of bias voltage is developed. Thinner glass film is manufactured by elec trophoretic method. The film properties are investigated by IMA (ion microprobe analyzer) and the curve-fitted resultz are given by computer. The result shows that the density of negative charge in ZnO glass film is dependent on the fused conditions of atmosphere and temperature treatment. Na~+ mobile cations are piled up near surface with the quantity lowered in a minus exponential function of depth in the film. A fused glass passivated planar type PN junction device with a simple etched contour was manufactured and tested resulting in high avalanche breakdown voltage.

本文介绍了以电泳涂敷法制成的较薄玻璃膜为介质膜的金属—玻璃—半导体(MGs)结构的C—V特性测量,介绍了离子探针(IMA)测量玻璃膜的性质以及运用计算机进行曲线拟合。结果表明,Zn系玻璃膜的负电荷密度和其热成型过程的气氛和温度处理有关。Na~+离子主要聚集在玻璃膜内靠表面一侧,其随深度分布趋势接近指数函数。作者研制了内层玻璃钝化高压PN结器件,测量得到了良好的电特性。

 
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