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peak inverse voltage
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  反峰电压
     The push-pull output circuit made up of a pair of MOSFETs was used in the driver circuit. The Pspice simulation results indicated that the peak inverse voltage on MOSFET switch could be clamped by RCD.
     利用Pspice软件对开关上有无剩余电流电路(RCD)两种情况进行仿真,结果表明,加装RCD电路可以有效吸收MOSFET在关断瞬间产生的反峰电压
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  相似匹配句对
     The elution of peak I .
     经生物学鉴定,第Ⅰ峰具有生物活性。
短句来源
     The Peak of the World
     世界之峰
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     Inverse Scattering
     电磁逆散射
短句来源
     On Solutions of Inverse Matrixs
     逆矩阵的若干求法
短句来源
     The both methods obtain registration information by determining maximum peak in inverse Fourier Transforms domain.
     这两种方法都是通过确定逆傅立叶变换域最大峰值位置来获得配准信息。
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  peak inverse voltage
The peak inverse voltage from a DC mine hoist motor will be approximately twice the supply voltage so the thyristor bank is designed accordingly.
      
The peak inverse voltage across the secondary diode PIVS is calculated in Step 24.
      
RMS voltage, capacitor value and rating, diode peak inverse voltage; ignore transformer load regulation and pulse nature of current in calculations.
      
Peak inverse voltage rating of each rectifier to be tested.
      


In the electron circuit,the electromagnetic relay is often used to control the working of signal.The peak inverse voltage will be produced from the relay's switching-on to its switching-off.This article shows and analyses some circuits which can remove or restrain the peak inverse voltage and speed up the relay switch's changing speed.

在电子电路中,经常使用继电器来控制信号的工作状态,继电器从接通到断开会产生反峰电压,本文提出并分析了几个消除或箝制反峰电压并能提高继电器开关转换速度的电路,以供参考。

The design of the trigger based on complex programmable logic device(CPLD),the driver circuit and the residual current device(RCD) circuit of MOSFET pulse modulator were introduced,and the parallel-switch and inductive-adder MOSFET modulators were experimentally studied.The push-pull output circuit made up of a pair of MOSFETs was used in the driver circuit.The Pspice simulation results indicated that the peak inverse voltage on MOSFET switch could be clamped by RCD.A pulse current with an amplitude of...

The design of the trigger based on complex programmable logic device(CPLD),the driver circuit and the residual current device(RCD) circuit of MOSFET pulse modulator were introduced,and the parallel-switch and inductive-adder MOSFET modulators were experimentally studied.The push-pull output circuit made up of a pair of MOSFETs was used in the driver circuit.The Pspice simulation results indicated that the peak inverse voltage on MOSFET switch could be clamped by RCD.A pulse current with an amplitude of 13 A,a rise time of 20 ns and a flat top time of 80 ns was obtained on the load of 30 Ω when 3 parallel MOSFET modulator was adopted as the switch and the charge voltage was 450 V,while the amplitude of the obtained pulse was 40 A,the rise time 25 ns and flat top time 70 ns on the load of 30 Ω when the inductive adder modulator was adopted.

介绍了MOSFET调制器的基本原理,并对其并联分流和感应叠加两种开关结构进行了实验研究。基于可编辑逻辑器件设计了其触发电路,驱动电路采用高速MOSFET对管组成的推挽输出形式,加快了MOSFET的开关速度。利用Pspice软件对开关上有无剩余电流电路(RCD)两种情况进行仿真,结果表明,加装RCD电路可以有效吸收MOSFET在关断瞬间产生的反峰电压。实验中,电流波形用Pearson线圈测量,用3个MOSFET并联作开关,当电容充电电压为450 V,负载为30Ω时,脉冲电流13 A,前沿20 ns,平顶约80ns;用3个单元调制器感应叠加,当电容充电电压为450 A,负载为30Ω时,脉冲电流强度为40 A,前沿25 ns,平顶约70 ns。

 
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