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液相外延
相关语句
  liquid phase epitaxy
     Growth of 1.3μm Double Heterostructure GaInAsP/InP by Liquid Phase Epitaxy
     液相外延生长1.3μm GaInAsP/InP双异质结
短句来源
     A Review on Physical and Chemical Studies of REBa_2Cu_3O_(7-δ)/MgO Liquid Phase Epitaxy Growth in Initial Stage
     REBa_2Cu_3O_(7-δ)/MgO液相外延生长初始阶段的物理化学研究
短句来源
     LIQUID PHASE EPITAXY OF InSb_(1-x)Bi_x
     InSb_(1-x)Bi_x的液相外延
短句来源
     Growth of Cr,Ca∶YAG by Liquid Phase Epitaxy
     Cr,Ca∶YAG的液相外延生长
短句来源
     Liquid phase Epitaxy of LiNbO_3 thin film on the LiTaO_3 Substrates
     在LiTaO_3基片上液相外延法生长LiNbO_3单晶薄膜
短句来源
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  liquid phase epitaxial
     Liquid Phase Epitaxial Growth of In_(0.53)Ga_(0.47) As
     In_(0.53)Ga_(0.47)As的液相外延生长
短句来源
     Liquid phase epitaxial growth of large area Hg_(1-x)Cd_xTe epitaxial layers
     液相外延生长大面积Hg_(1-x)Cd_xTe外延层
短句来源
     The growth of liquid phase epitaxial (LPE) films on the [111] direction of the Gd_3Ga_5O_(12) substrates with nominal film compositions in the (YSmLuCa)_3 (FeGe)_5O_(l2) system is studied.
     本文简要地讨论了3微米泡径CaGe系石榴石膜的配方选择和技术指标的制定。 应用液相外延生长技术,在Gd_(3)Ga_(5)O_(12)的[111]方向上生长了(YSmLuCa)_3(FeGe)_(5)O_(12)系石榴石膜。
短句来源
     Characterization of Liquid Phase Epitaxial Modulation-doped GaAs-AL_xGa_(1-x)As Heterostructures
     液相外延调制掺杂GaAs-Al_xGa_(1-x)As异质结特性
短句来源
     Influence of Substrate and Growth Conditions on Hg 1-x Cd xTe Liquid Phase Epitaxial Films
     衬底及生长工艺对Hg_1-_xCd_xTe液相外延薄膜的影响
短句来源
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  “液相外延”译为未确定词的双语例句
     LPE Growth of Ga_xIn_(1-x) P-GaAs
     Ga_xIn_(1-x)P-GaAs的液相外延生长
短句来源
     LPE Growth and Growth Mechanism of Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3 Films
     液相外延生长Pb(Zn_(1/3)Nb_(2/3))O_3-PbTiO_3膜及生长机理研究
短句来源
     The Composition Analysis of In_(1-x)Ga_xAs_yP_(1-y)Inp/np LPE Materials
     In_(1-x)Ga_xAs_yP_(1-y)/InP液相外延材料的组分分析
短句来源
     Infrared Plasma Reflection Spectra of p/p~+ Pb_(0.8) Sn_(0.2) Te LPE Layer
     p/p~+Pb_(0.8)Sn_(0.2)Te液相外延层等离子体的红外反射光谱
短句来源
     This paper describes the LPE growth of Ga0.47In0.53As/InP on(100) and (111) InP.
     本文叙述在(100)和(111)InP衬底上Ga_(0.47)In_(0.53)As/InP液相外延生长方法.
短句来源
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  liquid phase epitaxy
Isothermal liquid phase epitaxy of A3B5 compounds under excessive vapor pressure of the B5 component
      
Forsterite layers are grown by the method of liquid phase epitaxy from supercooled PbO-B2O3-based fluxes.
      
Morphological effects in liquid phase epitaxy (The C8H5O4K-C8H5O4Rb-H2O system)
      
The results obtained are used to create a theoretical model of formation of characteristic morphological textures in liquid phase epitaxy, including their formation from the aqueous solutions of the respective salts.
      
Epitaxial films grown by low-temperature liquid phase epitaxy on p-type 4H-SiC were used as strongly doped subcontact layers for making low-resistance contacts to the p-type material.
      
更多          
  liquid phase epitaxial
Characteristics of etched (100) surfaces ofn- andp-type liquid phase epitaxial GaAs have been found to be governed by negative surface charges.
      
The compositional dependence of lattice parameters and strains induced by lattice mismatch of liquid phase epitaxial (LPE) In1-xGaxASyP1-y/InP with smallx andy are studied.
      
The nature of both traps is the same as of the DX center in liquid phase epitaxial material reported by Lang et al.
      
We describe the first MOS transistors fabricated in silicon-on-insulator layers, obtained by liquid phase epitaxial lateral overgrowth of Si over SiO2.
      
In the crystal growth, it was found that the liquidus and solidus isotherms are affected by the orientation of InP source and substrate crystals in the liquid phase epitaxial growth of GaInAsP alloys.
      
更多          


Our apparatus for multilayer liquid phase epitaxy is described. Factors relating to the thin layer LPE growth are discussed. The epitaxy experiments are arranged to take advantage of the mathe- matical method of orthogonal process design. The regime of continuous and uniform growth has been found for the purpose of improving the threshold current density of GaAs-Ga1-xAlx As DH lasers up to 1000-2000A/cm2.

介绍我们采用的多次液相外延实验装置,讨论影响薄层液相外延生长的因素。采用 “正交设计”的数学方法安排外延试验,找到多层连续均匀生长的条件.使GaAs- Ga1-xAlxAs双异质结激光器阈值电流密度达到 1000—2000安培/平方厘米。

Our apparatus for multilayer liquid phase epitaxy is described. Factors relating to the thin layer LPE growth are discussed.The epitaxy experiments are arranged to take advantage of the mathematical method of orthogonal process design. The regime of continuous and uniform growth has been found for the purpose of improving the threshold current density of GaAs-Ga1-xAlx As DH lasers up to 1000-2000A/cm2.

介绍我们采用的多次液相外延实验装置,讨论影响薄层液相外延生长的因素。采用“正交设计”的数学方法安排外延试验,找到多层连续均匀生长的条件,使GaAs—Ga_(1-x)A1_xAs双异质结激光器阈值电流密度达到1000—2000安培/平方厘米。

Measurements on transient capacitance and thermally stimulated capacitance of N-type GaAs epitaxial materials have been carried out. Electron traps could not be detected in LPE materials. However, two electron traps 0.82 and 0.43 eV below the conduction band have been discovered in VPE materials, the electron capture sections are found to be about 2.0 ×10-18 and 1.5 × 10-15cm2 respectively.

对N型砷化镓外延材料进行了瞬态电容和热激电容测量。在液相外延材料中一般检测不到电子陷阱的存在,但是在气相外延材料中,通常都能找到导带下0.82和0.43eV两个电子陷阱,它们的电子俘获截面分别为2.0×10~(-13)和1.5× 10~(-13)cm~2。

 
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