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thin film semiconductor
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  “thin film semiconductor”译为未确定词的双语例句
     INTERFACE ENERGY BETWEEN THIN FILM SEMICONDUCTOR(ZnO) AND SEMI-INFINITE METAL(Ni)
     半导体ZnO薄层和金属Ni构成界面时的界面能
短句来源
     The interface energy between thin film semiconductor(Zno) and metal(Ni)is calculated via a Green function formalism.
     本文利用格林函数(GF)方法计算了ZnO半导体薄层和金属Ni构成界面时的界面能△E。
短句来源
  相似匹配句对
     Physcis of the Thin Film
     《薄膜物理学》
短句来源
     THIN FILM ELECTROLUMINESCENCE
     薄膜的场致发光
短句来源
     THIN
     薄
短句来源
     Diamond Semiconductor Thin-Film and Its Applications
     金刚石半导体薄膜及其应用
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  thin film semiconductor
The importance of the determination of electrochemical properties of dyes and flat band potentials of a few thin film semiconductor electrodes by cyclic voltammetry is discussed.
      
Within each thin-film semiconductor technology category, various deposition methods have been devised, and many are represented in the above table.
      
The substrate or superstrate is the material upon which a thin-film semiconductor is deposited, and provides structural support.
      
It shows estimated capital costs for various thin film semiconductor deposition processes.
      
As a function of the applied bias, the capacitance of the thin film semiconductor electrode in contact with the electrolyte is measured.
      
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The interface energy between thin film semiconductor(Zno) and metal(Ni)is calculated via a Green function formalism. It is discussed in detial that the variation of the interface energy with interaction potential and the thickness of N-Iayers Zno thin film.

本文利用格林函数(GF)方法计算了ZnO半导体薄层和金属Ni构成界面时的界面能△E。讨论了界面能△E随NnO和Ni之间的相互作用势γ的变化.以及△E随半导体ZnO薄层的层数N(或厚度)的变化。

We have studied the I-U characteristic of the metal - polyethylene thin film - semiconductor. The experimental results show that it has smaller adverse current and higher barrier than that of the metal -semiconductors. We consider that the polyethylene thin film is ,in fact,a metal ultra- fine particle- polyethylene. This thin film has the electric bistable state characteristics at low temperature.

金属和半导体之间蒸上聚乙烯(PE)薄膜后的伏安特性的实验结果表明,存在PE薄膜时具有较高的势垒和较小的反向电流。PE薄膜实际上是金属超微粒子与PE薄膜组成。这种薄膜在低温下具有电学双稳态效应。

Another kind of differential reflectometry is proposed. The expeimental method is presented and the spectra modulation mechanism is discussed. It is pointed out that the energy gap of the pure bulk material can be directly obtained without any inhomogeneity processing of the material. The result of GaAs supports this view. The paper provides also a view to understand the results of thin film semiconductor materials in this measurement. The results of InGaAs/GaAs SQW and AlGaAs/GaAs HBT are shown and interpreted....

Another kind of differential reflectometry is proposed. The expeimental method is presented and the spectra modulation mechanism is discussed. It is pointed out that the energy gap of the pure bulk material can be directly obtained without any inhomogeneity processing of the material. The result of GaAs supports this view. The paper provides also a view to understand the results of thin film semiconductor materials in this measurement. The results of InGaAs/GaAs SQW and AlGaAs/GaAs HBT are shown and interpreted. For comparesion, the PR spectra of the samples are also presented.

本文提出了另一种新的对样品实行空间调制的微分反射光谱技术.文中给出了实验方法,讨论了调制机理,指出即使纯的体材料表面未经不均匀性处理,该方法也可直接给出其能隙大小,对GaAs的实验结果说明了这一观点.本文还分析了微分反射方法研究量子阱超晶格等薄膜半导体材料时的物理机理,给出并解释了InGaAs/GaAs单量子阱,AlGaAs/GaAsHBT等材料的微分反射谱.为了比较起见,文中还对照给出了每一样品的光调制反射谱.

 
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