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the flat band potential
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  平带电位
     The spectra of γ MnO 2 film varying with electrode potentials has also been obtained ,by which the flat band potential φ fb of γ MnO 2 can be located .
     并根据γ- Mn O2 膜电极的 EMRS随直流偏置电位的变化 ,确定出其在 1mol·L- 1 NH4Cl溶液中的平带电位值 .
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     The spectra of CdSe film electrodes varying with potential have also been obtained, by which the flat band potential of CdSe film electrode in Na 2SO 3 solutions can be located.
     结合 EMRS随直流偏置电位的变化 ,快速、准确地确定出 Cd Se电极在 Na2 SO3溶液体系中的平带电位值 .
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     The result reveals that the films behave as n-type and p-type semiconductors in the potential range above and below the flat band potential, respectively. This behavior is assumed to be the consequence of the semiconducting properties of the iron oxide and chromium oxide regions which compose the passive film.
     结果表明,不锈钢钝化膜在负于平带电位范围表现为p型半导体,在高于平带电位范围表现为n型半导体,这主要与组成钝化膜的Fe和Cr氧化物半导体性质有关.
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  “the flat band potential”译为未确定词的双语例句
     The difference is thought to result from the position of the metal deposition potential with respect to the flat band potential of n-TiO2. Composition profile of different elements in thin film Ti/TiO2-(Pt/Ir) anodes was carried out by SIMS, and the TiO2 film thickness is obtained, ca. 750 nm.
     使用SIMS分析了在Ti/TiO2-(Pt/Ir)修饰电极中Ti,Pt,Ir的浓度分布,大致算出TiO2薄膜厚度为750nm左右.
短句来源
     The flat band potential Efb of the α-Fe2O3 electrodes produced both by the ferrocene CVD technique and by the thermal oxidation of Fe foil are determined from the Mott-Schottky plots. The two set of Efb values are nearly identical. Thus the dopping effect on Efb has not been revealed as a consequence of the uneven dopping distribution.
     以二茂铁CVD和热氧化两种光电极对比,两者同具α-Fe_2O_3外表面而应有接近的平带电势E_(fb),其中前者底层附近的钛掺杂能扩大光响应,应能在E_(fb)值所要求的偏压下得到显著的光助电解水效应。
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  相似匹配句对
     Birefraction of W Flat
     W片的双折射
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     ON P-FLAT MODULES
     关于P-平坦模
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     The World is Flat
     世界是平的
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     THE MUSIC WORLD IS FLAT
     音乐的世界是平的
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     the energy bands tend to become flat;
     能带趋于平坦化;
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  the flat band potential
It is accounted for by removal of highly defective surface layers, which also leads to an increase in the barrier height, as judged from a positive shift of the flat band potential (on the electrochemical scale).
      
The flat band potential is found to be -0.18 V (SCE).
      
The photoelectrochemical measurements for the coatings were done in lithium perclorate and were used to determine the flat band potential, Vbp, and the electron diffusion length, L.
      
The potential dependence of the impedance indicated that the barrier layer consisted of a depletion layer within the PTCR ceramic, when the flat band potential of LaNiO3 on the PTCR ceramic at about -250 mV was exceeded.
      
From Mott-Schottky plots the donor concentration (ND) and the flat band potential (Efb) were obtained.
      
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A n-type α-Fe2O3 semiconductor photoelectrode was prepared by chemical vapor deposition (CVD) of ferrocene onto Ti foil.An outstanding feather of this electrode is that the action spectrum extends to 670nm which is far beyond 550nm as estimated from the energy gap of α-Fe2O3 semiconductor (2.2eV),and therefore,enhances the photore-sponse.This effect may be attributed to Ti dopping as a result of diffusion of the substrate during prolonged heat treatment under Ar atmosphere.This is evidenced by Auger electron...

A n-type α-Fe2O3 semiconductor photoelectrode was prepared by chemical vapor deposition (CVD) of ferrocene onto Ti foil.An outstanding feather of this electrode is that the action spectrum extends to 670nm which is far beyond 550nm as estimated from the energy gap of α-Fe2O3 semiconductor (2.2eV),and therefore,enhances the photore-sponse.This effect may be attributed to Ti dopping as a result of diffusion of the substrate during prolonged heat treatment under Ar atmosphere.This is evidenced by Auger electron spectroscopy and composition in-depth profile obtained by continous ion sputtering technique.To-gether with X-ray powder analysis and scanning electron microscope the structure of the α-Fe2O3 film was thus determined.This viewpoint is further evidenced by the effect of changing substrate Ti to Pt or Fe foil,by the direct TiO2 dopping effect of sintered α-Fe2O3 electrodes as compared with that of s thermal oxidized pure Fe foil photoelectrode.The flat band potential Efb of the α-Fe2O3 electrodes produced both by the ferrocene CVD technique and by the thermal oxidation of Fe foil are determined from the Mott-Schottky plots.The two set of Efb values are nearly identical.Thus the dopping effect on Efb has not been revealed as a consequence of the uneven dopping distribution.However,owing to Ti dopping the electrode obtained from ferrocene gives profound effect of photoassisted electrolysis of water when a small bias as required by such Efb value is applied.

在钛片上用二茂铁化学沉积(CVD)制备了多晶α-Fe_2O_3光电极。这种电极的工作光谱延伸到670nm,大大超过了与其能带间隙相对应的550nm。这种光响应的增强归因于氩氛热处理时由底层扩散而导致的钛的掺杂。离子溅射逐层剥离术和俄歇电子能谱给出这种掺杂下各组分的表层深度分布,结合X-射线粉末结构分析和扫描电子显微术得到了α-Fe_2O_3薄膜结构。借助于与热氧化法结果的对比,改变CVD底层材料效果对比,以及粉末α-Fe_2O_3的TiO_2掺杂效应,都给上述钛掺杂影响光响应的观点提供了佐证。 以二茂铁CVD和热氧化两种光电极对比,两者同具α-Fe_2O_3外表面而应有接近的平带电势E_(fb),其中前者底层附近的钛掺杂能扩大光响应,应能在E_(fb)值所要求的偏压下得到显著的光助电解水效应。实验结果与此一致。

In this paper the flat-band potential of (111) plane, of n-InP, is determinated by two methods, the first is to determine the differential capacitance and the second is to detormine the open-circuit potential when the electrode is illuminated with a light of enough intensity. The results obtained from these two methods differ less than 0.14V. Many factors, such as pH, redox couples, frequency, crystalline plane and surface treatment are investigated. The influence of pH on the flat-band...

In this paper the flat-band potential of (111) plane, of n-InP, is determinated by two methods, the first is to determine the differential capacitance and the second is to detormine the open-circuit potential when the electrode is illuminated with a light of enough intensity. The results obtained from these two methods differ less than 0.14V. Many factors, such as pH, redox couples, frequency, crystalline plane and surface treatment are investigated. The influence of pH on the flat-band potential is-56V/pH, and four redox couples, i. e. Fe~(2+)/Fe~(3+), I~-/I_3~-, Fe(CN)_6~(4-)/Fe(CN)_6~(3-), S~(2-)S_n~(2-) as well as the frequencies do not influence the flat-band potential, the relexation phenomena of the capacitance and the resistance can be explained by the existence of surfaoe states. The crystalline plane and the surface treatment influence the flat-band potential obviously. Finally, the donor concentration and the position of the energy band edge are calculated.

用微分电容法及强光照开路电位法研究了电解质溶液的pH、氧化还原对、交流电频率、n-InP晶面及表面处理对其液结界面平带电位的影响,并测定了n-InP半导体电极的一些参数.

In this the Paper effects of Ru~(3+) and other cations on the PEC properties of n-InP electrode are investigated The adsorption of Ru~(3+) doesn't influence the photoanodic polarization curves of n-InP in Fe.~(2+)/Fe~(3+) and Fe(CN)_6~(4-)/Fe(CN)_6~(3-) solutions but effects it in S~(2-)/S_x~(2-) solution significantly. A current peak is observed at -0.9V vs. SCE. and the peak current varies linearly with the square root of the potential sweep rate but the peak potential is unchanged. The spectral...

In this the Paper effects of Ru~(3+) and other cations on the PEC properties of n-InP electrode are investigated The adsorption of Ru~(3+) doesn't influence the photoanodic polarization curves of n-InP in Fe.~(2+)/Fe~(3+) and Fe(CN)_6~(4-)/Fe(CN)_6~(3-) solutions but effects it in S~(2-)/S_x~(2-) solution significantly. A current peak is observed at -0.9V vs. SCE. and the peak current varies linearly with the square root of the potential sweep rate but the peak potential is unchanged. The spectral response curves show that the adsorption of Ru~(3+) increases the response but doesn't change the band gap. The adsorption of Ru~(3+) shifts the flat-band potential towards the cathodic direction. It can be explained by the reduction of electron affinity. When the light intensity is below 40 mWcm~(-2), the oxidation of S~(2-) proceeds stepwisely and the electrochemical reaction is the controlling step, so the current-light intensity curve deviates from straight line. When the light intensity is over 40 mWcm~(-2), the reaction proceeds in one step and the electrochemical reaction is no longer the controlling step, so the current-light intensity curve is linear. The adsorption of Ru~(3+) increases photo-current but doesn't change the shape of the curves The relative increase of current against the logarithm of adsorption time is a straight line The effects of adsorption of Ru~(3+) may be explained by its influence on surface states.

应用光阳极极化曲线,电流-光强曲线、光谱响应曲线、平带电位以及电流相对增加与吸附时间之间的关系曲线研究了Ru~(3+)表面吸附对n-InP光电化学性能的影响,还研究了其它一些阳离子吸附的影响。

 
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