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hot filament chemical vapor deposition
相关语句
  热丝化学气相沉积
     Nanocrystalline SiC films have been synthesized on Si(111) substrate by hot filament chemical vapor deposition(HFCVD) technique with CH4 and SiH4 as reaction gases.
     采用热丝化学气相沉积(HFCVD)技术以甲烷(CH4)和硅烷(SiH4)作为源反应气体在Si(111)衬底上合成了纳米晶态SiC薄膜。
短句来源
     (110)&(100) Texture diamond films were deposited on cemented carbide(WC-6%Co)substrate by Hot filament chemical vapor deposition (HFCVD), using the gas mixture of methane and hydrogen.
     以CH4和H2为反应气体,用热丝化学气相沉积(HFCVD)法在YG6(WC-6%Co)硬质合金基体上沉积了具有(110)和(100)织构的金刚石薄膜。
短句来源
     Nanocrystalline SiC films have been deposited on Si(111)substrate by hot filament chemical vapor deposition(HFCVD)technique with CH_4 and SiH4 as reaction gases at lower temperature(400℃-500℃).
     采用热丝化学气相沉积(HFCVD)技术,以甲烷(CH4)和硅烷(SiH4)作为源反应气体在Si(111)衬底上生长了晶态SiC薄膜。
短句来源
     Carbon nanotips were prepared from a carbon film deposited on silicon by plasma-enhanced hot filament chemical vapor deposition using CH_4,NH_3 and H_2 as the reaction gases.
     用CH4、NH3和H2为反应气体,利用等离子体增强热丝化学气相沉积系统在沉积有碳膜的Si上制备了碳纳米尖端.
短句来源
     Carbon nanotips were prepared by plasma-enhanced hot filament chemical vapor deposition under different bias current using CH_4, NH_3 and H_2 as the reaction gases, and investigated by scanning electron microscopy and micro-Raman spectrometer.
     用CH_4,NH_3和H_2为反应气体,利用等离子体增强热丝化学气相沉积系统在不同偏压电流的条件下制备了碳纳米尖端,并用扫描电子显微镜和显微Raman光谱仪对碳纳米尖端进行了研究.
短句来源
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  热丝化学气相沉积法
     The silicon carbide films were grown on the silicon substrate by hot filament chemical vapor deposition (HFCVD) technique with CH_4 and SiH_4 as reaction gases.
     利用热丝化学气相沉积法(HFCVD)以CH4和SiH4作为反应气体在Si衬底上制备了SiC薄膜。
短句来源
     The influence of N2 and O2 on the facet appearance of diamond has been studiedwith hot filament chemical vapor deposition (HFCVD).
     采用热丝化学气相沉积法(HPCV),研究了N2、O2对金刚石晶形显露的影响。
短句来源
     In this paper,the situation of the diamond film nucle at ion was introuced,the nucleation on different substrates in HFCVD(Hot Filament Chemical Vapor Deposition) system were deposited.
     本文介绍了当前金刚石薄膜形核的现状及用热丝化学气相沉积法在不同的衬底上沉积金刚石膜 ,对Si、Ni、Cu三种衬底生长的金刚石膜进行研究如何增大形核密度、提高形核质量。
短句来源
     Oriented diamond films were synthesized on Si(111) substrates via plasma enhanced hot filament chemical vapor deposition (PE-HFCVD),and the diamond films were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD).
     采用等离子体增强热丝化学气相沉积法在Si(111)衬底上生长金刚石薄膜 ,扫描电子显微镜 (SEM )和X射线衍射 (XRD)分析结果表明金刚石晶体颗粒在〈111〉方向实现了取向生长。
短句来源
     The diamond films were deposited on boronized surface of WC-13%Co via hot filament chemical vapor deposition(HFCVD).
     采用热丝化学气相沉积法(HFCVD)以甲烷和氢气为反应气体,在经950℃×5h硼化处理的 YG13(WC-13%Co)硬质合金上沉积了金刚石薄膜。
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  热丝化学汽相沉积
     Discussed is the influence of pretreatment technology in the course of SiC/Si films of hetero-structure growing on on-axis Si(111) substrate by the method of hot filament chemical vapor deposition (HFCVD).
     讨论了在热丝化学汽相沉积(HFCVD)法沿Si(111)晶面异质生长SiC薄膜的过程中,预处理工艺对SiC成膜的影响。
短句来源
     Discussed is the effect of the carbonization of the substrates on the growing of SiC/Si film on on-axis Si(111) substrates by hot filament chemical vapor deposition (HFCVD).
     讨论了在用热丝化学汽相沉积(HFCVD)法沿Si(111)晶面异质生长SiC薄膜的过程中衬底碳化工艺对SiC成膜的影响。
短句来源
     CHARACTERIZATION STUDY OF TEXTURED DIAMOND FILMS GROWN ON SILICON (100) SUBSTRATE BY HOT FILAMENT CHEMICAL VAPOR DEPOSITION
     电子助进热丝化学汽相沉积金刚石薄膜
短句来源
     Aligned carbon nanotubes were prepared by plas ma_enhanced hot filament chemical vapor deposition using CH 4 , H 2 , an d NH 3 as reaction gases. It was investigated how different negative b ias affects the growth of aligned carbon nanotubes.
     用CH4 ,H2 和NH3 作为反应气体 ,利用等离子体增强热丝化学汽相沉积制备出准直碳纳米管 ,并用扫描电子显微镜研究了不同负偏压对准直碳纳米管生长的影响 .
短句来源
  “hot filament chemical vapor deposition”译为未确定词的双语例句
     Diamond film was deposited on the ceramic substrates of Si_3N_4, AIN, and sialon by hot filament chemical vapor deposition (HFCVD).
     用热丝法在Si_3N_4,AlN,sialon陶瓷基材上沉积了金刚石薄膜。
短句来源
     In this paper,the microstructure and film-substrate interface of diamond film deposited on Si_3N_4-SiC_w,AlN ceramics by hot filament chemical vapor deposition(HFCVD)were investigated by using transition electron microscopy.
     用透射电子显微镜研究了用热丝法在Si_3N_4-SiC_w,AlN陶瓷基材上生长的金刚石薄膜的显微结构和金刚石膜-基片界面。
短句来源
     β C 3N 4 research is one of the hottest topics in condensed matter physics and materials sciences. By using bias hot filament chemical vapor deposition,for the first time,we have synthesized β C 3N 4 single crystasl 1 3μm in length and 300 500nm in cross section. Its lattice parameters are a =6 24 and c= 2 36 with N∶C=1 30 1 40.
     βC3N4的研究是近年来凝聚态物理和材料科学研究的热门课题之一.我们利用偏压辅助热解化学气相沉积方法,首次获得长1—3μm,横截面尺寸在300—500nm的βC3N4六棱体.其晶格常数a=624和c=236.N∶C=130—140.
短句来源
     In the present work, diamond thin films were deposited on the cobalt-cemented tungsten carbide (WC-6%Co and WC-3%Co) by Hot Filament Chemical Vapor Deposition (HFCVD).
     本研究采用热丝CVD法在YG3硬质合金(WC-3%Co)和YG6硬质合金(WC-6%Co)基体上沉积了金刚石薄膜。
短句来源
     Intrinsic stress in diamond films growth by hot filament chemical vapor deposition was studied as a function of CH 4 concentration (0 4%~1 2%) and growth temperature (800~1000 ℃).
     研究了热丝CVD法金刚石薄膜本征内应力随甲烷的体积分数(04%~12%)、生长温度(800℃~1000℃)等生长工艺参数的变化关系。
短句来源
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  hot filament chemical vapor deposition
We studied the use of carbon nanotubes as a seeding layer for the nucleation of diamond on Si (100) substrate by using a hot filament chemical vapor deposition (HFCVD) system.
      
Nucleation of diamond over nanotube coated Si substrate using hot filament chemical vapor deposition (CVD) system
      
A study of diamond synthesis by hot filament chemical vapor deposition on Nc coatings
      
For biomedical applications, it is highly desirable to be able to deposit smooth adherent diamond films on various complex-shaped substrates using the hot filament chemical vapor deposition technique (HFCVD).
      
Hot filament chemical vapor deposition (HFCVD), with a modified vertical filament arrangement, has been used for the deposition of diamond films.
      
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In this paper,diamond film had been synthesized on Si_3N_4+SiC composite ce-ramics and sialon ceramics by HFCVD(hot filament chemical vapor deposition).The obtaindfilms were analysized by X-ray diffraction,Raman spectrometer,scanning electron microscopy,profilograph and scratch tester.The adhesion of the film was measured and the effective actor ofthe adhesion between the film and substrate was tentativly studied.

本文用热丝 CVD 法在氮化硅复合陶瓷及 Sialon 陶瓷上沉积了金刚石薄膜,用 X 射线衍射、拉曼光谱、扫描电子显微镜、表面形貌仪、划痕实验仪对所形成的膜及基体进行了分析。初步探讨了膜与基材的附着性影响因素。

Diamond film was deposited on the ceramic substrates of Si_3N_4, AIN, and sialon by hot filament chemical vapor deposition (HFCVD). The process parameters were similar to those in the deposition of diamond film on single crystalline silicon wafer and the growth rate of diamond was 1 μm/h, which is slightly lower than that for silicon wafer. Formation of diamond was identified by using Raman spectroscopy and X-ray diffraction analysis and scanning electron microscopy. To evaluate the adhesion between...

Diamond film was deposited on the ceramic substrates of Si_3N_4, AIN, and sialon by hot filament chemical vapor deposition (HFCVD). The process parameters were similar to those in the deposition of diamond film on single crystalline silicon wafer and the growth rate of diamond was 1 μm/h, which is slightly lower than that for silicon wafer. Formation of diamond was identified by using Raman spectroscopy and X-ray diffraction analysis and scanning electron microscopy. To evaluate the adhesion between the diamond film and the substrate, scratch testing has been used to measure the critical loading. The highest adhesion was obtained for Si_3N_4 and sialon substrates. It is shown also experimentally that the adhesion between the diamond film and the substrate decreases with the increase of thickness of the diamond film.

用热丝法在Si_3N_4,AlN,sialon陶瓷基材上沉积了金刚石薄膜。沉积参数与在单晶硅上沉积金刚石基本一致.沉积速率为1μm/h。用X射线衍射和Raman光谱检测了所形成的膜。用划痕实验估测膜基附着力。结果表明:在Si_3N_4和sialon陶瓷基材上附着力较好;随金刚石膜厚增长,膜基附着力下降。

Diamond film synthesized by hot-filament chemical vapor deposition was depositedonto planer interdgital microelectrode arrays forming a thermal-sensitive device of diamondfilm. The measurement was performed on the device when the temperature changed from 0~700℃. Results show that the device exhibited a high sensitivity, good stability and was con-venient to be integrated as a temperature sensor.

本文采用热丝CVD方法和在以石英为衬底的金属钛梳状微电极上制备出的均匀致密、结晶完整的金刚石薄膜,制成了金刚石薄膜热敏器件.对其热敏特性的测试结果表明,该热敏元件具有检测温度范围宽、响应快、灵敏度高、性能稳定等优点.

 
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