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radiation lifetime
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  辐射寿命
     Grasp calculation of fine-structure energy levels and radiation lifetime in Cr~(20+)、Cu~(25+)andLr~(99+) ions
     Cr~(20+)、Cu~(25+)和Lr~(99+)离子精细结构能级和辐射寿命的计算
短句来源
     Fine-structure energy levels and radiation lifetime in Mg-like ions Mn XIV and Zn XIX
     类镁离子Mn XIV和Zn XIX的精细结构能级和辐射寿命
短句来源
     The absorption cross-section of 1.21at.%Nd~(3+)-doped Ca0.05Y0.95VO4 crystal was calculated as 14.11×10-20cm2 at 808nm, so the crystal was fit to be pumped by 808nm LD, and its emission cross-section and radiation lifetime were calculated as 2.771×10-18cm2 and 106.5μs respectively.
     1.21at.%的Nd:Ca0.05Y0.95VO4晶体在808nm的吸收截面为14.11×10-20cm2,适合808nm的激光二极管泵浦。 其发射截面和辐射寿命分别为2.771×10-18cm2和106.5μs。
短句来源
     The absorption cross-section σ, radiation lifetime ττ and fluorescence quantum efficiency η are determined from the measured absorption-and fluorescence spactra. On the basis of these parameters the mode-locking properties and the laser action of these dyes are discussed.
     通过测定的吸收和荧光光谱,确定了染料的吸收截面σ、辐射寿命τ_γ和荧光量子效率η_ο基于这些参数讨论了染料的锁模特性和激光作用的可能性。
短句来源
     The results indicate that, with the increase in B 2O 3 content, the radiation lifetime increases, while the spontaneous emission probability, the absorption cross-section, the corresponding integral absorption cross-section and emission cross-section all decrease, that the refraction index reaches its minimum when the mole fraction of B 2O 3 is 15%, and also that the absorption cross-section and the emission cross-section increase with the electric field intensity of the modifier cation.
     研究结果表明,随着B2O3 含量的提高,玻璃的自发辐射跃迁几率降低,辐射寿命增长,但吸收截面、相应的积分吸收截面和发射截面减小,玻璃的折射率在B2O3 含量为15% (摩尔分数)时达到极小值. 随着修饰体阳离子场强的升高,吸收截面和发射截面有增大趋势.
短句来源
  相似匹配句对
     Radiation synovectomy
     放射性滑膜切除术
短句来源
     ray radiation.
     因而可能是一种潜在的辐射防护剂。
短句来源
     Lifetime Measurement of Spontaneous Radiation of A_2Σ state of No
     NO分子A~2Σ态自发辐射寿命测量
短句来源
     Study on positron annihilation lifetime spectrum of polysilicone rubber after proton radiation
     质子辐照空间级硅橡胶的正电子淹没寿命谱研究
短句来源
     The lifetime of the micromotor was improved.
     使得电动机的寿命大为提高。
短句来源
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  radiation lifetime
Experiments on several polymers have shown that the dependence of the radiation lifetime under load on the intensity of the ultraviolet radiation and test temperature is governed by general empirical laws.
      
The effectiveness of the integral method of reciprocity was demonstrated in determining the stimulated emission cross sections and radiation lifetime of an ytterbium ion in the laser crystals Yb3+:KYW and Yb3+:KGW.
      
Based on this method, formulas for calculating the radiation lifetime of impurity centers in crystals have been derived.
      
This will consider the cascading of second-order nonlinearities of KTP crystal, the third-order nonlinearity of the laser medium, influences of the continuous pump rate, and the stimulated radiation lifetime of the active medium.
      
The maximum experimental error is 0.3 cm-1 for the energy and 20% for the radiation lifetime measurements.
      
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For molecular gas lasers with two combined levels (including flowing type gas lasers), it is pointed out that if the short-range diffusion time is much shorter than the radiation lifetime spatial holes burned will be eliminated, and when the gas is rarefied, this condition becomes that the short-range free motion time should be much less than the radiation lifetime and more convenient criterions are given.

本文指出联合二能级气体激光器(包括流动的)空间烧孔被消除的条件是短程扩散时间远小于辐射寿命;当气体极其稀薄时,空间烧孔被消除的条件是短程自由运动时间远小于辐射寿命。并给出具体的判别公式。

In this paper we discuss the spectral properties of two organic dyes: pentame-thylidyne and undecamethylidyne. The absorption cross-section σ, radiation lifetime ττ and fluorescence quantum efficiency η are determined from the measured absorption-and fluorescence spactra. On the basis of these parameters the mode-locking properties and the laser action of these dyes are discussed.

本文着重讨论了五甲川和十一甲川染料的光谱性质。通过测定的吸收和荧光光谱,确定了染料的吸收截面σ、辐射寿命τ_γ和荧光量子效率η_ο基于这些参数讨论了染料的锁模特性和激光作用的可能性。

In stationary state the output power of LED can be written aswhere η is the external quantum efficiency, ηi the internal quantum efficiency, ηq, the carrier efficiency, J the injection current density, A, the radiation cross -section and e the electron charge.Using the standard power pB as normalizing treatment, we can obtain the normalized equationwhere I is the injection current, ηi,B and IB is the standard internal quantum efficiency and injection current, respectively. Owing toso we must consider simultanously...

In stationary state the output power of LED can be written aswhere η is the external quantum efficiency, ηi the internal quantum efficiency, ηq, the carrier efficiency, J the injection current density, A, the radiation cross -section and e the electron charge.Using the standard power pB as normalizing treatment, we can obtain the normalized equationwhere I is the injection current, ηi,B and IB is the standard internal quantum efficiency and injection current, respectively. Owing toso we must consider simultanously the influence of the carrier lifetime τ and the radiation lifetime τr.According to the literature [12], large trapping cross-section and high deep level impurity concentration exist in InGaAsP, so the effect of mul-tiphonon recombination relating to the deep level impurity (or trap) must be considered. From this, the T may not only be influenced by the Auger recombination lifetime τA, the surface recombination lifetime τ,the radiation recombination lifetime τr, but also by the multiphonon recombination lifetime τp. Thus T can be written aswhere s is the recombination rate at the interface, d is the active layer thickness.Hence, the total recombination rate is expressed aswherewhere A, Bp and Br are the Auger, multiphonon and radiation recombination coefficient, respectively; n, is the injection carrier density, pb, the acceptor concentration in equilibrium, and N, the concentration of the deep level impurity.Based on the above mentioned expressions, we can obtain the following equationFrom above, the effect of the deep level impurity on the output power saturation in InGaAsP/InP LED can be obtained. This influence has been verified both experimentally and theoretically (Fig.6) , hence, it is not sufficient to consider only the effect of the Auger recombination.In this paper, the dependences of the deep level impurity (or trap) on the injection current, the carrier lifetime and the output power are discussed (see the Fig.1,2 and 4 ).The effect of temerature T on η; is also shown as in Fig.3.From Fig.l, we can see the deviation degree from the I-P linear dependence △pD sharply increases with increasing Nt and as the Nt decreases,the T increases at the same I in Fig. 2 . At N, = 1.5×1014cm -3,the calculated τ value well agrees with the experimental one[14] .Thus it can be seen that it is necessary to reduce the deep level impurity concentration in InGaAsP.Fig. 3 shows that η; is inversely proportional to T at the same I, and when the I is greater than 200mA, the ηi; hardly changes with I at the same T, therefore, the influence of temperature must be considered in range of I = 10-200mA. From Fig. 5, it may be shown that multiphonon recombination coefficient B, sharply increases with εT at the same T, but when the εT is greater than 0.5eV the B, hardly changes with T, when εT is less than 0.35eV the multiphonon trapping cross-section is much less than 10~20cm2, where the multiphonon recombination can't be considered by calculation. In general, because εT is no larger than 0.3eV in GaAlAs LED, its property is better than InGaAsP LED.Hence, these phenomenon further illustrate that reducing the N, or removing the deep centre is very important for improving the characteristics of InGaAsP LED and laser.

本文从文献测得InGaAsP材料中存在着较大的俘获截面、较高的深能级杂质(或缺陷)浓度的事实出发,应用了文献(13)所提出的深能级引起的多声子非辐射复合模型,在此模型基础上,使用了一系列与多声子复合有关的关系式,从理论和实验上证实了考虑多声子复合对LED输出功率饱和性影响的必要性。讨论了深能缀杂质(或缺陷)的能级及其浓度对注入电流Ⅰ与载流子寿命τ、内量子效率qηi,输出功率间关系的影响。也讨论了温度的影响。研究了各参数闯相互关系,并找出了影晌饱和性的原因所在。

 
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