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alloying
相关语句
  合金化
    Formation of ohmic contacts on n-type GaAs by laser beam alloying
    用激光合金化在n型GaAs上制作欧姆接触
短句来源
    LASER ANNEALING OF Zn-IMPLANTED GaAs AND LASER ALLOYING OF OHMIC CONTACTS ON GaAs
    注Z_n~+-GaAs的激光退火及GaAs欧姆接触的激光合金化
短句来源
    CW CO_2-LASER ANNEALING AND ALLOYING OF SEMICONDUCTORS
    半导体的CO_2激光退火和合金化
短句来源
    CW CO_2 Laser Alloying of Au-Ge-Ni Ohmic Contacts on n-GaAs
    用连续CO_2激光合金化制备Au-Ge-Ni-n GaAs欧姆接触
短句来源
    Nd-YAG Laser Alloying of Ohmic Contacts on P-InP
    P-InP欧姆接触的Nd-YAG激光合金化
短句来源
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  “alloying”译为未确定词的双语例句
    Study on laser gas alloying for titanium alloy
    钛合金的激光气体氮化研究
短句来源
    Effects of laser coatings on high temperature properties of low alloying steel
    激光涂敷对低合金钢高温性能的影响
短句来源
    Study on Laser Alloying of HS320 Aluminium alloy Piston Groove
    HS320铝活塞环槽两岸激光表面强化的研究
短句来源
    The InGaAs/InP detectors ,with responsivity of 0.2 1A / W were fabricated using laser induced diffusion and laser assisted alloying. To our knowledge.
    用激光诱导扩散和激光辅助合金的方法,制成InGaAs/InP探测器,响应度达到0.21A/W。
短句来源
    The lower specific contact resistance, ρc=2.4-2.7 × 10-4 cm2, is obtained when alloying at 450℃ for 2 min or at 350℃ for 30 min. These results indicate that the specific contact resistance strongly depends on the interface " interdiffusion degree".
    在 450℃热处理1—2 min或在 350℃热处理30 min,均可得到较低的比接触电阻,这表明界面处的互扩散“程度”是决定比接触电阻的重要因素。
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  alloying
Synthesis of Fe-substituted CoSb3-based skutterudite Co4-xFexSb12 by mechanical alloying-hot pressing-annealing
      
Mechanical alloying and preparation of Fesubstituted CoSb3-based skutterudite Co4-xFexSb12 (x?1) were studied.
      
All the compositions showed similar kinetics in mechanical alloying, where the skutterudite phase was kinetically more favorable than CoSb2 phase initially.
      
A single phase skutterudite structure could not be obtained via mechanical alloying.
      
Kinetics of the Initial Stage of Mechanical Alloying in the Fe(80)Zr(20) System
      
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We have produced ohmic contact on the surface of n-GaAs using a pusled Q-Switched ruby laser (A=0.6943m), a pulsed Q-Switched YAG laser(A=1.06m)and a frequency doutled pulsed YAG laser (A=0.53m). The specific contact resistance of alloyed Au-Ga-Ni contacts has been measured on the surfaces of n-GaAs. The experimental results show that the use of laser alloying forms more uniform ohmic contacts. The contacts possess electrical properties and surface conditions which are superior to those formed by conventional...

We have produced ohmic contact on the surface of n-GaAs using a pusled Q-Switched ruby laser (A=0.6943m), a pulsed Q-Switched YAG laser(A=1.06m)and a frequency doutled pulsed YAG laser (A=0.53m). The specific contact resistance of alloyed Au-Ga-Ni contacts has been measured on the surfaces of n-GaAs. The experimental results show that the use of laser alloying forms more uniform ohmic contacts. The contacts possess electrical properties and surface conditions which are superior to those formed by conventional bulk-heating.

我们采用了脉冲Q开关红宝石激光以(λ=0.6943微米)、脉冲Q开关石榴石激光(λ=1.06微米)和倍频的脉冲石榴石激光(λ=0.53微米)产生n型GaAs表面的欧姆接触;测量了n型GaAs上AuGaNi合金的比接触电阻.实验表明用激光合金化形成了均匀的欧姆接触,这种接触具有比通常的体加热合金化更优越的电学性质和表面状况.

The laser annealing of Zn-implanted GaAs with a Q-switched ruby laser deliveringa 20 ns pulse of radiation with an energy density of 1-1.5 J/cm~2 is described.Hallmeasurements indicate that a sheet hole concentration of 3.3×10~(19)-8.7×10~(20)/cm~3 is ob-tained.This is consistent with the result obtained from Infrared Plasma Resonance.Electron diffraction investigations show that during laser annealing,the amorphouslayer completely recrystallizes.An ideal diffraction pattern of single crystal has beenobserved....

The laser annealing of Zn-implanted GaAs with a Q-switched ruby laser deliveringa 20 ns pulse of radiation with an energy density of 1-1.5 J/cm~2 is described.Hallmeasurements indicate that a sheet hole concentration of 3.3×10~(19)-8.7×10~(20)/cm~3 is ob-tained.This is consistent with the result obtained from Infrared Plasma Resonance.Electron diffraction investigations show that during laser annealing,the amorphouslayer completely recrystallizes.An ideal diffraction pattern of single crystal has beenobserved. Laser alloying of Ohmic contacts on both n-type and p-type bulk GaAs is also re-ported.As compared with conventional alloying a lower specific contact resistance anda better morphology are obtained.

本文研究了激光退火使离子注Zn的GaAs层获得高的表面浓度作P~+层.所用的调Q红宝石激光器能量密度1~1.5J/cm~2、脉宽20ns.霍尔测量得到的表面空穴浓度达3.3 × 10~(19)-8.7 ×10~(20)/cm~3,红外等离子共振极小测量结果与之相符.电子衍射实验观察到注入无定形层经激光退火后再结晶的单晶衍射花样. 另外,也报道了用激光合金化在N型和P型体GaAs材料上制备欧姆接触的结果,所得到的比接触电阻比通常热合金化的比接触电阻略低,其表面形貌也比热合金化的好.

The optimum alloying condition in ohmic contact of GaAlAs/GaAs and InGaAsP/InP semiconductor lasers is described in detail, and theoretical analysis on the point of view of metallization is given.

本文比较详细地介绍了GaAs和InP半导体激光器欧姆接触中合金的最佳条件,并从金属学观点对此进行了理论分析.

 
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