An Al 2O 3-ZrO 2(ZTA) system was chosen for investigation. Samples were sintered by microwave sintering or conventional sintering,Compared with conventional sintering process, microwave sintering enables to improve properties of sintered ZTA ceramics, as lower sintering temperature, finer microstructure, increase mechanical properties and decrease rubbing loss.
The dielectric constant (4 224) of the millimeter wave sintering samples at 900 ℃ for 15 min is much higher than that(3 655) of the conventional sintering samples at 1220 ℃ for (15 min), while the relative density of both samples is near,88.7 % for the former and 89.6% for the latter.
The comparison between the magnetic properties of NdFeB magnet by microwave magnetic field sintering and those of magnet by conventional sintering technology shows that the Brwas improved 50%, the Hcb was improved 8%, and the Ms was improved 40%.
The Ba 0.80 Sr 0.20 TiO 3 ceramics with grain size 0.8-15 μm were prepared by microwave sintering and conventional sintering. The grain size effect on the dielectric properties and ferroelectric properties of the ceramics were measured and discussed.
The results also indicated that the electrical conductivity of the LSCCF sample increases with increasing sintered temperatures and the content of strontium. From 600℃ to 800℃, the minimum of electrical conductivity of La0.7Sr0.15Ca0.15Co0.9Fe0.1O3-δ by microwave sintering method was 672 s/cm and it is higher than 425 S/cm of conventional sintering method.
The highest densities of Bi_(4)Ti_(3)O_(12) ceramics prepared by using conventional sintering process for the powders synthesized by solid state and hydrothermal methods are 7.94 g/cm~(3) (98%) and 7.67 g/cm~(3) (95.6%) respectively.
The electrical (conductivity) of sample increased with the increasing of sintering temperature and decreasing of the content of Ca~(2+), higher than 500 S/cm and bigger than maximum 100 S/cm from conventional sintering method in the range of 500～800 ℃.
Pretreatment at or higher than the complete formation temperature of SBN could prevent the abnormal grain growth(2) Sr_(0.7)Ba_(0.3)Nb_2O_6 ceramics (SBN70) were prepared by using conventional sintering techniques from nitrate precursor and carbonate precursor.
With this process raw powders, as applied for the "conventional" sintering route as well as recycled powders from used bipolar plates, have been applied.
Conventional sintering was carried out in an inert atmosphere while microwave sintering was performed under ambient conditions.
As compared to conventional sintering, compacts sintered in microwaves exhibit higher densification and finer microstructure but no corresponding improvement in mechanical properties and wear resistance.
Porous TiNi shape-memory alloys (SMAs) have been successfully fabricated by three different processes, including capsule-free hot isostatic pressing (CF-HIP), conventional sintering (CS), and self-propagating high-temperature synthesis (SHS).
After LS, the samples exhibited considerable shrinkage, which was very different from the effects of conventional sintering (CS).
The key problem in ceramic sintering is the atom diffusion or mobility. Proper dopant helps promote defect forming during sintering. It is reported that for KTaO3 ceramics, in which MgO is used as a sintering aid, excellent grain growth and mi-crostructure can be obtained by conventional sintering method. Tests on the dielectric properties within the temperature range 4.2 to 540K show that they are different from those of pure KTaO3 ceramics.
A Simple and direct method,Al-Si ohmic contact achieved by utilizing capacitance dischar- ging instead of conventional sintering,is introduced.Using this method,Al-Si interdiffusion phenomenon which causes the failure for shallow junction device can be restricted effectively.
A simple and direct method,Al-Si ohmic contact achieved by utilizing rapid thermalannealing for 30 sec of conventional furnace instead of conventional sintering,is reported.AES, SEM, specific contact resistance and PN junction reverse currem investigations showthat Al-Si interdiffusion phenomenon which causes the failure for shallow junction device canbe restricted effectively,therefore ohmic contact with good junction property can be achieved.