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driver circuit
相关语句
  驱动电路
    Relationship Between Recombination Coefficient and Discharge Driver Circuit in TEA CO_2 Laser Discharge
    TEA CO_2激光器放电中电子—离子复合系数与放电驱动电路的关系
短句来源
    Study of Driver Circuit in Laser Velocimetry System
    激光测速系统中驱动电路的研究
短句来源
    Study on the PWM driver circuit of LD for laser fuze
    脉冲式激光引信用连续可调LD驱动电路的研究
短句来源
    The main task of this research is the design of Q-switched ruby laser resonator andelectro-optical Q-switched driver circuit, the study of experiment technology.
    该课题主要工作是Q开关红宝石激光谐振腔与电光Q开关驱动电路设计、实验技术的研究。
短句来源
    2. Ruby Q-switched driver circuit was designed, drop-voltage wave was created.
    2、设计了红宝石电光Q开关驱动电路,实施新的退压波形。
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  “driver circuit”译为未确定词的双语例句
    According to experimental results of predecessors, the values of recombmation coefficient in equilibrium are compared and analyzed for TEA CO_2 laser discharges drived by two kinds of driver circuit.
    根据前人的实验结果,本文对TEACO_2激光器放电在两种不同的电路驱动下,平衡时复合系数的大小进行了比较和分析;
短句来源
    The design of driver circuit for Laser Diode using separated components and an chip MAX3766 to produce constant optical output power was studied.
    近红外生物组织光谱测量仪器中光源采用小功率半导体激光器 ,本文讨论了两种驱动方法 ,一种是基于分立器件的设计 ,另一种采用集成 L aser Diode驱动芯片 MAX376 6 ,设计的主要目的是保证光源光功率稳定。
短句来源
    The whole system is designed into three modules: analog driver circuit of semiconductor cooler, MCU control part and GPIB interface.
    进行了温度控制系统的总体设计,采用模块化设计,将系统设计成三部分模块:半导体制冷器模拟驱动模块、单片机控制系统模块、GPIB接口转换模块。
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  driver circuit
Tape automated bonding (TAB) is generally the method of choice for connecting the LCD and the LCD driver circuit in flat panel displays.
      
Finally, a numerical and a CMOS clock driver circuit examples are given.
      
Emission characteristics of a single heterostructure GaAs diode laser are reported using a simple driver circuit.
      
The system is composed of a microcomputer module with a digital signal processor interface units and an attenuator/driver circuit.
      
A commerical gate generator controls the driver circuit and defines the duration of the light flashes.
      
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According to experimental results of predecessors, the values of recombmation coefficient in equilibrium are compared and analyzed for TEA CO_2 laser discharges drived by two kinds of driver circuit. By analyzing and discussing some test data obtained by predecessors, this paper affirms that the variation of product of recombination coefficient and electron density with ratio of electric field strength across the electrode gap to gas number density is related with the parameters and structure of discharge...

According to experimental results of predecessors, the values of recombmation coefficient in equilibrium are compared and analyzed for TEA CO_2 laser discharges drived by two kinds of driver circuit. By analyzing and discussing some test data obtained by predecessors, this paper affirms that the variation of product of recombination coefficient and electron density with ratio of electric field strength across the electrode gap to gas number density is related with the parameters and structure of discharge driver circuit.

根据前人的实验结果,本文对TEACO_2激光器放电在两种不同的电路驱动下,平衡时复合系数的大小进行了比较和分析;通过对前人得到的一些实验数据进行的分析和讨论,本文确认,复合系数与电子密度的乘积随极间电场与气体密度比值的变化关系是与所用的放电驱动电路的参数及结构相关联的。

A monolithicaly integrated light transimitter OEIC was designed and fabricated using a double exposure process and a novel interconnecting process based on smooth profile of InP formed by wet etching. The OEIC consists of a 1 55 μm wavelength multi quantum well laser diode and a driver circuit with heterojunction bipolar transistors (HBTs). An open eye diagram under 1.5 Gb/s bit rate 2 23 -1 nonreturn to zero (NRZ) pseudorandom code is demonstrated. The output optical power and power dissipation...

A monolithicaly integrated light transimitter OEIC was designed and fabricated using a double exposure process and a novel interconnecting process based on smooth profile of InP formed by wet etching. The OEIC consists of a 1 55 μm wavelength multi quantum well laser diode and a driver circuit with heterojunction bipolar transistors (HBTs). An open eye diagram under 1.5 Gb/s bit rate 2 23 -1 nonreturn to zero (NRZ) pseudorandom code is demonstrated. The output optical power and power dissipation of the transmitter are 2 dBm and 120 mW, respectively.

采用一种新的基于InP材料在 [0 11]晶向化学腐蚀形成的平滑剖面的互连工艺和两次曝光光刻技术 ,设计并制作了带有 1.5 5 μm多量子阱激光器和InP/InGaAs异质结双极晶体管驱动电路的光发射单片光电集成电路。在 1.5Gbit/s 2 2 3- 1伪随机码调制下器件有张开的眼图 ,光输出功率为 2dBm ,芯片功耗约 12 0mW。

A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about...

A novel fabrication process related to a smoothly wet chemical etching profile o f InP-based epitaxial layers in the crystal direction of [01for an InP-based monol ithic vertically integrated transmitter with an MQW laser diode and a heterojunction bipolar tran sistors driver circuit is described.A clear eye output diagram via an O/E converter is demonstrat ed und er a 1.25Gb/s non-return-zero pseudorandom code with a pattern length of 2 the integrated transmitter has a power dissipation of about 120mW with an optical output of 2dBm.

描述了一种基于 In P材料沿 [0 11]晶向湿法化学腐蚀形成平滑侧壁实现的 In P基多量子阱激光器和异质结双极晶体管驱动电路单片集成 .通过一个横向缓冲台面结构 ,降低了激光器阳极和晶体管集电极互连工艺的难度 ,改善了光发射单片光电集成电路的可制造性 .采用该方法制作的光发射单片直流功耗为 12 0 m W,在码长 2 2 3- 1传输速率 1.5 Gb/ s伪随机码信号调制下有清晰的眼图 ,光输出功率为 2 d Bm

 
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