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si region
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  si区
     29Si NMR spectra indicate that SAPO-11 sample with an Si/Al of 0.33 significantly enhances the neighboring region between SAPO region and Si region, and NH 3-TPD results also show it has higher strong acid/weak acid ratio.
     2 9SiNMR谱表明Si Al比为 0 .33的SAPO 11的SAPO区与Si区的交界区明显扩大 ,与之对应的NH3 TPD也表明有较高的中强酸 弱酸比例 .
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  “si region”译为未确定词的双语例句
     Results: The predicted results show that, there were a globular domain in SI region and three helix structures in S2 region of S protein, with the helices regions located at residues 729-769, 880-1015 and 1163-1184 respectively.
     结果:预测结果表明,在S蛋白中存在一个球状结构区域(Sl区)和三个螺旋区( 52区),螺旋结构分别位于残基729一769,880一1015,1163一1184。
短句来源
     We propose the new poly_Si TFT structure which reduces the leakage current effectively employing highly resistive a_Si region in the channel.
     提出一种新型多晶硅TFT结构,它在沟道中设置了高阻的非晶硅区,从而有效地减小了漏电流。
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  相似匹配句对
     Si.
     Si.
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     C-Si;
     C—Si,C—M;
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     Efficiency Calibration of Si(Li) Detector in Low-Energy Region
     Si(Li)探测器低能区的效率刻度
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     Solving the Poisson's Equation in the M/a-Si Barrier Region
     解M/a-Si势垒区泊松方程
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     shock region.
     三个区域对应了时域的激波形成。
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  si region
Phase equilibria in the α-Ti-Al-Si region of the Ti-Si-Al system
      
Low-temperature crystallization of a-Si in an electric field appears to be caused by enhanced migration of the Cu ions in the a-Si region.
      
The presence of a single-phaseα-Al(Fe,Mn)Si region, starting in the Al-Mn-Si subsystem and extending toward the Al-Fe-Si subsystem, could be confirmed.
      
Nor was EP reinstated in the MI after ablation of area 5, despite complete but gradual reinstatement of EP (after an initial decline to 53%) in the nearby SI region.
      
For deposition in the two-phase, Al(α)-Si region (435°C), fine θ -phase particles precipitated during wafer cooldown, while coarse Si nodules formed at the sublayer interface during deposition.
      
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This work studied the technology of formation of pn junction and self-aligned CoSi2 film contact on Si doped with B P As by diffusion or ion implantaion. Ion beam sputtering was applied for Co film deposition, and solid state interaction of Co/Si was performed by rapid thermal process (RTF) to form CoSi2 films. The sheet resistances of doped Si regions decreased by an order of magnitude after CoSi2 formation. For the samples implanted with As, the effects of different thermal processes on As...

This work studied the technology of formation of pn junction and self-aligned CoSi2 film contact on Si doped with B P As by diffusion or ion implantaion. Ion beam sputtering was applied for Co film deposition, and solid state interaction of Co/Si was performed by rapid thermal process (RTF) to form CoSi2 films. The sheet resistances of doped Si regions decreased by an order of magnitude after CoSi2 formation. For the samples implanted with As, the effects of different thermal processes on As redistribution during interaction of Oo/Si were investigated. Experimental results indicated that in the case of conventional process (As was activated prior to CoSi2 formation), a snowplow effect of As during interaction of Co/Si was observed. In the case of concurrent process (As activation and interaction of Co/Si were carried out in one step), As exibited an obviously different behavior. The spreading resistance probe and electrical characterization showed that, for either of the above two cases, a high .carrier concentration can be produced at the interface of CoSi2/Si, and the pn junctions with CoSi2 contact exibited good I-V properties, and their leakage current was much less than that of the comparative pn. junction with Al/Si contact.

研究经扩散或离子注入掺B、P、As的硅表面上形成自对准CoSi_2薄膜接触和pn结技术.采用离子束溅射Co膜和Co/Si快速热处理(RTP)固相反应形成CoSi_2薄膜.在掺杂Si上形成CoSi_2薄膜以后,薄层电阻可下降一个数量级.对AS离子注入样品中,研究了不同硅片热处理工艺对As在Co/Si反应过程中再分布的影响.实验结果表明,对于CoSi_2形成之前杂质先经激活退火的硅样品,As在Co/Si固相反应过程中发生显著的“雪犁”效应,而在CoSi_2形成之前未经激活退火的样品,在杂质激活和Co/Si固相反应共退火过程中,As的行为则有明显不同.扩展电阻和电学测试表明,用这两种不同热处理工艺,在CoSi_2/Si界面处均可获得较高的载流子浓度,形成的CoSi_2接触pn结具有良好的二极管I-V特性,其反向漏电流明显小于对比实验的Al/Si接触pn结.

The GexSi(1-x)/Si strained-layer superlattices avalanche photodetector has been studied and optimum designed. Its optimum structure parameters are: the thickness of i-Si avalanehe region is 1. 8~2 μm; the carrier concentration of p-Si region is 1018 cm-3 and thickness is 17 nm; the total thickness of superlattices is 340 nm. The detector can be operated in the range of 1. 3~ 1. 6 μm.

对GexSi(1-x)/Si应变超晶格雪崩光电探测器进行了分析与优化设计。优化结构为:i-Si雪崩区厚是1.8~2μm;p-Si区的掺杂浓度是1018cm-3,厚为17nm;超晶格总厚为340um。它可探测1.3~1.6μm的红外光。

We propose the new poly_Si TFT structure which reduces the leakage current effectively employing highly resistive a_Si region in the channel. This new dveice has partially crystallized active layer, where both edges of channel region adjacent to source and drain are not crystallized and remain a_Si. In th e fabrication of the proposed device, there are not additional photo masking steps and misalign problem. Another advantage of the proposed dveice is increase of aperture ratio adopting...

We propose the new poly_Si TFT structure which reduces the leakage current effectively employing highly resistive a_Si region in the channel. This new dveice has partially crystallized active layer, where both edges of channel region adjacent to source and drain are not crystallized and remain a_Si. In th e fabrication of the proposed device, there are not additional photo masking steps and misalign problem. Another advantage of the proposed dveice is increase of aperture ratio adopting the transparent ITO gate

提出一种新型多晶硅TFT结构,它在沟道中设置了高阻的非晶硅区,从而有效地减小了漏电流。这种新器件的有源层被局部晶化,而沟道区中与源极相邻的两个边界层未被晶化,保持非晶硅态。在制造新器件时不需要附加光刻工序,也不存在失调(misaling)问题。由于采用了透明的ITO栅,增大了开口率,这也是新器件的另一优点。

 
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