助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   photovoltaic detectors 的翻译结果: 查询用时:0.009秒
图标索引 在分类学科中查询
所有学科
无线电电子学
更多类别查询

图标索引 历史查询
 

photovoltaic detectors
相关语句
  光伏探测器
     STUDY ON THE PASSIVATION OF Hg_(1-x)Cd_xTe PHOTOVOLTAIC DETECTORS
     Hg_(1-x)Cd_xTe光伏探测器的钝化研究
短句来源
     Surface Leakage Current Mechanism and Passivation of Hg_(1-x)Cd_xTe Photovoltaic Detectors
     Hg_(1-x)Cd_xTe光伏探测器的表面漏电流机制及其钝化
短句来源
     Photovoltaic detectors in Pb_(0.07)Hg_(0.03)Te produced by Sb~+ ion implantation
     Sb~+离子注入Pb_(0.97)Hg_(0.03)Te光伏探测器
短句来源
     Gigahertz cutoff frequency capabilities of CdHgTe photovoltaic detectors at 10.6μ
     截止频率达千兆赫的10.6微米CdHgTe光伏探测器
短句来源
     Lead-tin-telluride 10 micron photovoltaic detectors
     用于10微米波长的碲锡铅光伏探测器
短句来源
更多       
  “photovoltaic detectors”译为未确定词的双语例句
     The performance of pin In_xGa_(1-x)As photovoltaic detectors with cutoff wavelengths of 1.7μm(x=0.53),1.9μm(x=0.6) and 2.2μm (x=0.7) was investigated theoretically and experimentally.
     从理论与实验两方面对截止波长为1.7μm(x=0.53),1.9μm(x=0.6)和2.2μm(x=0.7)p in InxGa1-xAs探测器性能进行了研究.
短句来源
     1/f Noise Spectra Measurement of IR Photovoltaic Detectors
     红外光伏探测器的1/f噪声谱测试
     Surface passivation on n~+-on-p-HgCdTe photovoltaic detectors was investigated in this paper. Surphur-passivation with Na_2S·9H_2O and ZnS is firstly performed on n~+-on-p-HgCdTe.
     首次采用Na2S. 9H2O在n+-p-HgCdTe表面进行化学硫化,然后溅射ZnS于化学硫化层上的钝化方法。
短句来源
     I-V characteristics show that surface leakage of n~+-on-p-HgCdTe photovoltaic detectors was reduced by surphur-passivation.
     I-V特性曲线显示,经过化学硫化的n+-p-HgCdTe器件的漏电流有所下降。
短句来源
     Experimental study about laser induced damage to photovoltaic detectors in vacuum
     激光对光伏探测器真空破坏的实验研究
短句来源
更多       
  相似匹配句对
     Improvement on Drift-diffusion Model for Photovoltaic Detectors
     光伏型光电探测器漂移-扩散模型的改进
短句来源
     STUDY ON RESPONSIVITY OF UV SI PHOTOVOLTAIC DETECTORS
     硅紫外光伏探测器件响应度的研究
短句来源
     X-ray Detectors
     X射线探测技术
短句来源
     Metal detectors (Ⅱ)
     现代金属检测器
短句来源
     Applications of Photovoltaic Devices
     光伏器件的应用
短句来源
查询“photovoltaic detectors”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  photovoltaic detectors
The existence of dislocations threading through the junction region of HgCdTe IR-photovoltaic detectors can greatly affect device performance.
      
Uncooled, long-wavelength photovoltaic detectors suffer from poor quantum efficiency and low differential resistance.
      
HgCdTe long-wavelength infrared photovoltaic detectors fabricated using plasma-induced junction formation technology
      
Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote-sensing applications
      
HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology
      
更多          


In this paper, a formula of detectivity D_λ~* of photovoltaic detector is obtained. Using this D_λ~* formula the detectivity of InSb photovoltaic detector at 77°K is calculated and the effect of the junction depth on detectivity is discussed.

本文得到了光伏器件的D_λ~*公式。用本文得到的D_λ~*公式,计算了InSb光伏器件的D_λ~*值,并讨论了结深对探测率的影响。

Steady state characteristics of HgCdTe photovoltaic detectors are computed using a specially designed finite difference method. Reasonable results on carrier distributions, potential distributions and volt—ampere characteristics (including dark characteristics, characteristics under illumination and the effects of junction depth, substrate thickness and doping profile on the characteristic curves) are obtained. Problems in the computations are noted and future improvements are indicated.

本文用特别设计的有限差分方法计算了光伏红外探测器碲镉汞的稳态特性,得到了合乎物理规律的载流子分布,电势分布和伏安特性(包括暗特性和光照特性)并计算了结深、底板厚度,杂质剖面等变化对伏安特性的影响。

The performance of photovoltaic detector with PbS1-xSex is calculated and it is shown that the detector will behave poorly at either a working temperature of 300 K or a low background temperature. However, PbS1-xSex is good for work at normal background temperature or 77 K and for some special applications.

本文计算了PbS_(1-x)Se_x光伏特探测器的性能,结果表明,这种探测器在300K工作温度下或低背景温度下,其性能不佳。但在77K工作和通常背景温度及某些特殊应用中,PbS_(1-x)Se_x材料是可用的。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关photovoltaic detectors的内容
在知识搜索中查有关photovoltaic detectors的内容
在数字搜索中查有关photovoltaic detectors的内容
在概念知识元中查有关photovoltaic detectors的内容
在学术趋势中查有关photovoltaic detectors的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社