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photovoltaic device
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  光伏器件
     (2) The ZnO:In nanorods/SiO_2/n-Si heterostructure photovoltaic device was prepared.
     (2)制备了ZnO:In纳米棒/SiO_2/n-Si异质结构光伏器件,对其光电转换性能和光伏响应能力进行了研究。
短句来源
     Influence of ZnTe Insertion Layer on CdS/CdTe Photovoltaic Device Performance
     ZnTe插层对CdS/CdTe光伏器件性能的影响
短句来源
     The DBLIP expression of the background fluctuation limit of a detector was derived and the condition approaching to the background fluctuation limit of the detector and the importance of a photovoltaic device parameter R_oA_d were analysised.
     推导出探测器背景光子噪声限D~#_(BLIP)的表达式,分析了探测器达到背景噪声限的条件及光伏器件R_oA_d的重要性。
短句来源
     STUDY OF PHOTOVOLTAIC DEVICE OF CYANINE DYES
     菁染料光伏器件的研究
短句来源
     Effects of ZnTe Insertion Layer on CdS/CdTe Photovoltaic Device Performance
     碲化锌插入层对CdS/CdTe光伏器件性能的影响
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  “photovoltaic device”译为未确定词的双语例句
     A photovoltaic device made with the dyad(ITO/3/Al) was confirmed that photoinduced electron transfer took place within the dyad,and its monochromatic incident photo-to-current conversion efficiency (IPCE) was 2.5%.
     制备了单层太阳能电池器件 (ITO/化合物 3/ Al) ,其单色光光电转换效率 (IPCE)约为 2 .5 %。
短句来源
     CdS/CdTe photovoltaic device with an insertion layer of ZnTe was fabricated and studied. The mechanisms responsible for the “roll over” and “cross over” phenomena observed in CdS/CdTe/Au system was tentatively analyzed.
     从理论上分析了CdS/CdTe/Au器件的暗态、高正偏压下电流饱和(Roll over)和光照、高正偏压下光暗I V曲线相交(Crossover)现象。
短句来源
     CHARACTERIZATION OF THIN FILMS IN MULTILAYERED PHOTOVOLTAIC DEVICE
     新型多层太阳电池薄膜性能
短句来源
     Also, a new [60]fulleropyrrolidine was synthesized and characterized. A photovoltaic device was fabricated with MEH-PPV doped with it, which showed better performance than that with pure MEH-PPV.
     论文的另一部分工作是合成了一种溶解性很好的C60吡咯烷衍生物,研究其掺杂MEH-PPV的光伏性质。 发现该化合物可以明显改善器件的光伏性能。
短句来源
     It is a new photovoltaic device with low cost, simple processes, stability, extensive application and little weight.
     DSSC是一种新型的光电能量转换器件,制造工艺简单、性能稳定、重量轻、成本低、适用范围广而具有良好的发展前景。
短句来源
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  相似匹配句对
     STUDY OF PHOTOVOLTAIC DEVICE OF CYANINE DYES
     菁染料光伏器件的研究
短句来源
     CHARACTERIZATION OF THIN FILMS IN MULTILAYERED PHOTOVOLTAIC DEVICE
     新型多层太阳电池薄膜性能
短句来源
     Infusion device
     输血输液装置
短句来源
     ELECTROMAGNETIC BATHE DEVICE
     电磁沐浴装置
短句来源
     Photovoltaic spectra are measured.
     测量了光伏谱;
短句来源
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  photovoltaic device
These results provide further indication that the HgCdTe/Si photovoltaic device technology is capable of combining high quality with high yield.
      
The possible utility of lightly BF3-doped a-Si:H as the i-layer in a p/i/n photovoltaic device is suggested.
      
Exploiting this discovery, we have developed a new type of photovoltaic device whose overall light to electric energy conversion yield is 10% under simulated AM 1.5 solar radiation.
      
Often applied metal contacts are fired at a higher temperature (typically above 700 °C) in air ambient, which produces ohmic contact on both surface of the photovoltaic device.
      
Characterization of ITO/ZnPc/CHR/In p-n junction-photovoltaic device using J-V, C-V and photoaction measurements
      
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Thin film Cu2S-CdS solar cells offer a very promising photovoltaic device for large scale terrestrial application.In this paper,the experimental reulst of our laboratory are presented.The cell lifetime accelerative tests was perfomed under five conditions and the results was compared between both encapsulated and conventional cells.(1) UV radiation test.(2) Xenon lamp simulation of sunlight radiation.(S)Acceleration test of humidity and rainfall.(4)Simulation enviromental temperature cycle test.(S)Accelarate...

Thin film Cu2S-CdS solar cells offer a very promising photovoltaic device for large scale terrestrial application.In this paper,the experimental reulst of our laboratory are presented.The cell lifetime accelerative tests was perfomed under five conditions and the results was compared between both encapsulated and conventional cells.(1) UV radiation test.(2) Xenon lamp simulation of sunlight radiation.(S)Acceleration test of humidity and rainfall.(4)Simulation enviromental temperature cycle test.(S)Accelarate test under constant stress.In accordance with the diversity of degradation of the cells,we carried on extrapolation experimental results demonstrated that the lifetime of the well encapsulated Cu2S-CdS solar cells can be extrapolated to 10-15 years.

本文介绍了密封薄膜Cu_2S—GdS太阳电池的加速寿命考验和对比外推试验,证明用我们目前工艺制作的电池,在地面条件下使用10年以上不会产生太大的衰降。

A preliminary report on the study of the photovoltaic device of Al/Cyanine Dyes/Ag is presented here, Due to tthe existence of Schottky barrier in between the layerof Al/Cyanine Dyes, the cell may give an open circuit voltage value greater than 500mv. The power conversion efficiency of photoelectric effect would be no less than 0.1%, and its absorption: range would cover the whole visible range.It is believed that if some necessary developing work is done furthermore, a solar cell may be expected to appear...

A preliminary report on the study of the photovoltaic device of Al/Cyanine Dyes/Ag is presented here, Due to tthe existence of Schottky barrier in between the layerof Al/Cyanine Dyes, the cell may give an open circuit voltage value greater than 500mv. The power conversion efficiency of photoelectric effect would be no less than 0.1%, and its absorption: range would cover the whole visible range.It is believed that if some necessary developing work is done furthermore, a solar cell may be expected to appear later. The possibility of the photo-voltaic device to be used as a laser probe has been in-vestigated too, and the cyanine dyes used for this purpose were of exceptionally strong photvoltaic effects. It was found that under the excitation of a He—Ne laser with an output of 10 mw the device containing the mentioned dyes can give a voltage as high as 320 mv and with a quantum efficiency about 6%.

本文研制了菁染料与金属铝层形成Schottky势垒所组成固体P-n结的光伏器件,其开路电压超过500毫伏,光谱吸收范围遍及可见光区,光电转换效率高于0.1%,可进一步发展成太阳能电池。同时,对若干光伏效应尤为显著的份菁、多核菁及七甲川链上具有桥链的硫三碳菁染料所研制的光伏器件,探索了它们作为激光探测元件的可能性,在输出为10毫瓦的He—Ne激光激发下,能够产生320毫伏的光生伏特效应,其量子效率为6%。

This paper describes systematically the amorphouscrystalline transitions of indium-selenium films with various compositions prepared by evaporation. The optical gaps and the absorption coefficients were determined by spectrophotometric measurement for the application to photovoltaic devices.

本文报道了蒸镀In-Se系统半导体薄膜的非晶态—晶态转变特性与成分的关系,测定了薄膜的光吸收谱及光学能隙。

 
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