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optical transition     
相关语句
  光跃迁
     Our calculated results show that the most important factor that impacts the optical transition frequency is the width of well.
     计算结果表明:影响光跃迁频率的最大因素是阱宽,随着阱宽的增加,光跃迁频率逐渐减小;
短句来源
     Study on Optical Transition Property of Semiconductor Quantum Dots
     量子点光跃迁性质的研究
短句来源
     Transformation of energy band structure for AlP/GaP short period superlattice and its optical transition of band-gap
     短周期超晶格AlP/GaP能带结构的转变及其带间的光跃迁
短句来源
     Determination for Energy Gap Parameters of Semiconductors and Optical Transition Types by the Surface Photovoltage Method
     表面光电压法测定半导体光跃迁类型和带隙参数
短句来源
     The optical transition energy in GaInNAs/GaAs QW structures is investigated from theoretical and experimental aspects.
     从理论和实验两个方面对GaInNAs/GaAs量子阱结构基态的光跃迁能量进行研究.
短句来源
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  光学跃迁
     The Ω_2 and Ω_4 parameters of Eu~ 3+ for optical transition are calculated from their emission spectra. The radiative transition probabilities(A)and the stimulated emission cross-sections(σ_e)of Eu~ 3+ ion between ~5D_0 and ~7F_J(J=1,2,4)are obtained.
     从发射光谱出发获得了Eu3+光学跃迁的J-O参数Ω2、Ω4,并计算了Eu3+离子5D0→7FJ(J=1,2,4)的自发辐射跃迁几率A以及受激发射截面σp。
短句来源
     The Ω_2 and Ω_4 parameters of Eu~ 3+ for optical transition were calculated from their emission spectra in terms of reduced matrix U~ t λ=2,4,6 character for optical transitions.
     从发射光谱与稀土Eu3+离子光学跃起矩阵元的特点,计算了Eu3+光学跃迁的参量Ω2与Ω4。
短句来源
     The results show that F and F\++ center have donor energy level in forbidden band,and F 2+ center has acceptor energy level in forbidden band. The optical transition energy are 0 85 eV and 1 67 eV for F and F\++ center,respectively.
     计算结果表明 ,F ,F+心在TiO2 晶体的禁带中引入了施主能级 ,F2 + 心在禁带中引入了浅受主能级 ,F和F+ 心的光学跃迁能分别是 0 85eV ,1 6 7eV .
短句来源
     Theoretical Study of Coherent Controlled Optical Transition with Multi laser Radiation
     多光束相干控制光学跃迁的理论研究
短句来源
     In the framework of 6 band effective mass theory, the optical gain of In 0.53 Ga 0.47 As/InP quantum wire are studied. The valence subband structure, density of states, carrier density, optical transition matrix elements, and optical gain are calculated. The results of optical gain for quantum wire are compared with those for quantum well.
     采用有效质量理论 6带模型 ,计算了 In0 .53Ga0 .4 7As/ In P量子线的光学性质 ,具体计算了In0 .53Ga0 .4 7As/ In P量子线的能带结构、态密度、载流子浓度、光学跃迁矩阵元和光学增益谱 ,并把量子线的光学增益谱和量子阱的光学增益谱作了比较。
短句来源
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  光学渡越
     Study on Application of Optical Transition Radiation Method on the Linear Induction Accelerators
     光学渡越辐射方法在直线感应加速器上的应用研究
短句来源
     THE APPLICATION OF OPTICAL TRANSITION RADIATION IN ELECTRON ENERGY SPECTRUM DIOGNOSIS
     光学渡越辐射在电子束能谱测量上的应用
短句来源
     Optical transition radiation (OTR) has been widely studied as a diagnostic means of electron beams in mid and high energy region.
     光学渡越辐射(OTR)作为中高能段束流诊断方法,已被广泛地研究。
短句来源
     In this paper, the basic theory of optical transition radiation(OTR) is described. The schemes of experiments on an electron beam of 18MeV, 2.7kA using OTR are presented.
     描述了光学渡越辐射用于束流诊断的理论依据,介绍了利用光学渡越辐射对18MeV,2.7kA的强流脉冲电子束进行诊断的实验方案。
短句来源
     For rearching the acceleration mechanism of hot electron, the integrated image pattern and spectrum of optical transition radiation (OTR) were measured at the normal direction from the rear side of targets employing optical CCD camera and OMA optical multi-channel spectrometer.
     为了探索超热电子的加热机制,利用光学CCD相机和OMA光学多道分析仪,分别在靶背法线方向测量了光学渡越辐射(OTR)积分成像图案和光谱。
短句来源
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  光电跃迁
     Optical transition effect is a fundamental physical process in the narrow gap semiconductor infrared detectors.
     光电跃迁效应是窄禁带半导体红外探测器的基本物理过程。
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  optical transition
The SLR model proposed that the lowest energy optical ionization was a very weak process, and that the optical transition which had been observed previously is a transition to a higher band.
      
A linear relationship between calculated optical transition values and the experimental reported ones was found.
      
The behavior of exciton-magnon light absorption bands of Rb2MnxCd1-xCl4 crystals in the region of the 6A1g → 4T2g(4D) optical transition of manganese ions in a magnetic field is used to construct magnetic phase state diagrams.
      
Our results show that the optical transition energies are approximately constant for the segregation efficiencies smaller than 0.7 in both QWs.
      
The ultraviolet/visible absorption spectroscopic investigation suggested that the absorption edge of optical transition of the first excitonic state occurred at around 320 nm.
      
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In the present paper authors give a brief account of a computer program controlled dye-laser spectrometer with spectral range from 400 nm to 700 nm. The Doppler-free isotope shifts in the optical transitions at 432 nm, 436 nm, and 557 nm have been measured by means of the spectrometer. The results tested by the King's diagram are found to be satisfactory. From the measured values of the, isotope shifts the changes in the nuclear mean square charge radii δ for stable Kr isotope are calculated.

本文简单介绍用计算机程序控制的光谱范围在400~700nm的激光分光计.用此分光计测量了氪波长432nm,436nm和557nm的光学跃迁无多普勒效应的同位素位移,并用金(King)图检验实验数据.结果是十分满意的.从所测量的同位素位移值,推算出稳定氪的平均平方核电荷半径变化δ〈γ~2〉.

In the present work,several physical parameters of semiconductor n-In P are determinated by the photoelectrochemical method using the Butler-Gartner model.The diffusion length of holes Lf is 1.4×10-5cm,the band gap Eg=1.305 e V,the optical transition is in the direct mode and the absorption coefficient α against the wavelength A is obtained.All of the above results are consistent with those obtained by physical methods in the literatures.

应用光电化学方法,根据Butler-Gartner模型测定了n-InP半导体材料的少子扩散长度、吸收系数、跃迁模式和禁带宽度,并将结果与文献上用物理方法测得的数据进行了比较。

The optical absorption edge spectra of a-GaAs:H have been measured and studied.The samples were deposited on quartz substrates in an Ar and H_2 mixture by rf sput-tering.The effect of thermal annealing in vaccum on the optical absorption has beenstudied.A low energy absorption tail was observed at hv≤1.2 eV and about T_α≥300℃.It is attributed to the optical transitions between the defect states in the valence bandand the defect states in the gap.

本文报道氢化的无定形GaAs(a-GaAs:H)的光吸收边谱的详细测量结果.样品是在Ar和H_2的混合气体中用射频溅射方法淀积在石英衬底上的.研究了真空热退火对光吸收的影响.在大约300℃的退火温度之上,在低能区观察到一个光吸收尾,它向上延伸到~1.2eV,与指数吸收区重叠,向下延伸到0.6eV的能量范围.我们认为它与价带边的缺陷态和能隙中的缺陷态之间的光跃迁有关.

 
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