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voltages
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  电压
    The Design of the Intrinsically safe Telephone Coupling Device DZO 2 Applicable to Various Power Voltages
    可适应电源电压变化的本安电话耦合器DZO-2的设计
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    Derivation of Mathematical Model for Measurement of Sandwiched Layer Voltages in Epitaxial Wafers
    外延片夹层电压数学模型推导
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    LOW BIAS VOLTAGES AND LARGE CURRENT PRECISION MEASUREMENT UNIT DESIGN
    一种低电压大电流精密测量部件的设计
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    Simulated in HSPICE,the bandgap reference source exhibits a temperature coefficient lower than 4-ppm/℃ in the temperature range from-55 ℃ to 125 ℃,and two adjustable reference voltages are also obtained.
    在-55~+125℃温度范围内,通过HSPICE仿真验证,基准电压的温度系数不到4ppm/℃。 在此基础上,实现了可调节的基准电压输出。
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    The breakdown voltage of this BCD structure VDMOS is 160V,its on-resistance is 0.3Ω,and its specific on-resistance is 26mΩ·cm2.The breakdown voltages of npn,pMOS,and nMOS are 50,35,and 30V,respectively,and the npn current gain and cut-off frequency are 120 and 700MHz,respectively.
    BCD样品芯片垂直导电VDMOS击穿电压为160V,导通电阻为0·3Ω,比导通电阻为26mΩ·cm2; npn,pMOS,nMOS击穿电压分别为50,35,30V;
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    We investigate the negative bias temperature instability (NBTI) of 90nm pMOSFETs under various temperatures and stress gate voltages (Vg). We also study models of the time (t),temperature (T),and stress Vg dependence of 90nm pMOSFETs NBTI degradation.
    对90nm pMOSFETs在不同温度及栅压应力下的NBTI效应进行了研究,从而提出了90nm pMOSFETs NBTI退化对时间t、温度T及栅压应力Vg的模型.
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    The intersecting point occurs in a pressure range from 5000 kg/cm2 to 9000 kg/cm2. The peak voltages VP change only slightly with pressure, while the valley voltages Vv are independent of pressure within the limit of experimental errors.
    结果表明:峯值电流Ip相对于压力的半对数作图为斜率不同的二段下降直线,在5000—9000kg/cm~2范围内有转折点;
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    An investigation of the Anderson Transition ir MOS inverson layers is given by measur-ing the dependence of the channel conductivity on gate voltages in the temperature range from4.2K to 20K.
    在4.2—20K温度范围内,利用MOS器件的沟道电导率随栅压的变化,研究了Si-SiO_2界面反型层中的Anderson转变.
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    Based on the field effect method,I_D—V_G characteristics are measured for diffe- rent source-drain voltages and annealing temperatures,indicating properties of the a-Si:H field effect transistor (FET).
    本文用场效应法测量了不同退火温度时的 I_D—V_G 关系,示出了 a-Si:H 场效应管的特性。
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    The devices,which are new in structure and easy to process,show breakdown voltages of higher than 300 V and leakage current density of lower than 91 nA/mm2.The electrical characteristics remain normal after 1. 5 MeV electron irradiation of 1000 kGy. It is a promising radiation-resistant particle detector.
    器件工艺简单,结构新颖,反向耐压高于300V,反向漏电流密度低(91nA/mm2),该器件能经受能量为1.5MeV、剂量为1000kGy的电子照射,电特性正常,是一种抗辐照的粒子探测器。
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  voltages
Finally, it is verified that the proposed SVPWM is actually a pulse-width modulation (PWM) technology based on line voltages.
      
Furthermore, the temperature of the guided molecules and its guiding efficiency can be controlled by adjusting the guiding voltages applied on electrodes.
      
Anode peak voltages (Eap) and their pH dependences were determined for the studied phenolic acids and flavonoids.
      
The solution of the steady-state problem is obtained on the basis of methods developed earlier for conditions typical of aerodynamical experiments and various electric currents and electrode voltages.
      
The use of both X- and Y-oriented double crystals as Q-switches in order to combine large electro-optic coefficients and low quarter-wave hold-off voltages with excellent thermal stability of the device is considered.
      
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A stabilized high voltage power supply for an electrostatic analyzer is described in this paper. The design principle has been analyzed in some detail. The output voltage of this instrument may be varied continuously from ± 5 kv to ±20 kv. Within this range the voltage stability is better than ±0.015% for about 3 hours. The ripple voltage is one part in 16,000. This instrument had since served normally for more than two years and was shown to be sufficiently simple and reliable both in...

A stabilized high voltage power supply for an electrostatic analyzer is described in this paper. The design principle has been analyzed in some detail. The output voltage of this instrument may be varied continuously from ± 5 kv to ±20 kv. Within this range the voltage stability is better than ±0.015% for about 3 hours. The ripple voltage is one part in 16,000. This instrument had since served normally for more than two years and was shown to be sufficiently simple and reliable both in operation and maintenance.

本文提出了一种稳定静电分析器用的高压电源的电路。文中对电路的工作原理及特点作了较详细的分析。本仪器的输出电压可自±20千伏变到±5千伏,在所有量程内电压的稳定度(约三小时〕优于±0.015%,波纹电压为1/16,000。二年多来该仪器一直运转正常,操作和维护是比较方便的。

This report deals with the cause of characteristics deffects of carbon composition film resistors.It is supposed that the main electrical properties of these resistors will be improved by adding the plasticizer of resin to the composition of films to raise the elasticity of films and the uniform distribution of carbon black in films.The report also gives a brief account of the functional mechanism of dibutyl phth-alate as a plasticizer in composition films and describes in detail the effects of the plasticizer...

This report deals with the cause of characteristics deffects of carbon composition film resistors.It is supposed that the main electrical properties of these resistors will be improved by adding the plasticizer of resin to the composition of films to raise the elasticity of films and the uniform distribution of carbon black in films.The report also gives a brief account of the functional mechanism of dibutyl phth-alate as a plasticizer in composition films and describes in detail the effects of the plasticizer on the temperature coefficients, voltage coefficients and noise levels of composition film resistors.The conclusion points out that 10% of dibutyl phthalate added to the composition of films will improve to a certain degree the above electrical properties with no adverse effects on the thermal stability.

本文首先讨论了合成膜电阻性能上缺点的根源,作者认为:在薄膜成分中加入合成树脂的增塑剂,可以提高薄膜的弹性和炭黑颗粒在薄膜中均匀的分布,从而改善电阻器的主要电性能。 本文扼要叙述了苯二甲酸二丁酯为增塑剂时在合成膜中的作用机理,并详细论述了此种材料对合成膜电阻器的温度系数、电压系数、噪音电平等性能的影响。 文中结论指出,在合成膜成分中加入10%量的苯二甲酸二丁酯对上述主要电性能都有一定程度的改进,而对电阻器的热稳定性无不良影响。

Effects of hydrostatic pressure up to 18000 kg/cm2 on the current-voltage characteristics of germanium Esaki diodes are reported. The pressure dependence of the peak currents IP, valley currents Iv, peak voltages VP, valley voltages Vv, and the exponential excess currents Ix have been studied on sixteen germanium Esaki diodes. The results indicate that the semi-logarithmic plot of peak currents IP versus pressure P consists of two straight lines with different negative slopes. The intersecting point...

Effects of hydrostatic pressure up to 18000 kg/cm2 on the current-voltage characteristics of germanium Esaki diodes are reported. The pressure dependence of the peak currents IP, valley currents Iv, peak voltages VP, valley voltages Vv, and the exponential excess currents Ix have been studied on sixteen germanium Esaki diodes. The results indicate that the semi-logarithmic plot of peak currents IP versus pressure P consists of two straight lines with different negative slopes. The intersecting point occurs in a pressure range from 5000 kg/cm2 to 9000 kg/cm2. The peak voltages VP change only slightly with pressure, while the valley voltages Vv are independent of pressure within the limit of experimental errors. For most diodes the pressure dependence of the valley currents is the same as that of peak current. The onsets of the exponential excess currents move toward high voltages with pressure. The pressure dependences of the peak currents and exponential currents have been discussed. It is shown that the presence of two straight lines with different slopes may be related to different tunnelling processes. A pressure coefficiant of the energy gap Eg can be determined at a constant exponential excess current; the result is in good agreement with that given by other authors.

本文报导了在流体静压力18000kg/cm~2的范围内,锗隧道二极管伏安特性随压力变化的实验结果。测量了十六只锗隧道二极管的峯值电流Ip、峯值电压Vp、谷值电流Iv、谷值电压Vv、指数过剩电流Ix和反向隧道电流等参数与流体静压力的关系。结果表明:峯值电流Ip相对于压力的半对数作图为斜率不同的二段下降直线,在5000—9000kg/cm~2范围内有转折点;峯值电压随压力改变较小;在误差范围内谷值电压不随压力而改变。对于大部分被测管子,谷值电流与压力的关系类似于峯值电流与压力的关系;随着压力的增加,指数过剩电流区向高偏压方向移动。讨论了峯值电流及指数过剩电流随压力变化的规律和其他结果。认为转折点的存在是表明隧道跃迁机构的改变;由指数过剩电流区固定电流值测偏压随压力改变,求得禁带宽度的压力系数与其他方法获得的结果很好符合。

 
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