Simulated in HSPICE,the bandgap reference source exhibits a temperature coefficient lower than 4-ppm/℃ in the temperature range from-55 ℃ to 125 ℃,and two adjustable reference voltages are also obtained.
The breakdown voltage of this BCD structure VDMOS is 160V,its on-resistance is 0.3Ω,and its specific on-resistance is 26mΩ·cm2.The breakdown voltages of npn,pMOS,and nMOS are 50,35,and 30V,respectively,and the npn current gain and cut-off frequency are 120 and 700MHz,respectively.
We investigate the negative bias temperature instability (NBTI) of 90nm pMOSFETs under various temperatures and stress gate voltages (Vg). We also study models of the time (t),temperature (T),and stress Vg dependence of 90nm pMOSFETs NBTI degradation.
The intersecting point occurs in a pressure range from 5000 kg/cm2 to 9000 kg/cm2. The peak voltages VP change only slightly with pressure, while the valley voltages Vv are independent of pressure within the limit of experimental errors.
An investigation of the Anderson Transition ir MOS inverson layers is given by measur-ing the dependence of the channel conductivity on gate voltages in the temperature range from4.2K to 20K.
Based on the field effect method,I_D—V_G characteristics are measured for diffe- rent source-drain voltages and annealing temperatures,indicating properties of the a-Si:H field effect transistor (FET).
The devices,which are new in structure and easy to process,show breakdown voltages of higher than 300 V and leakage current density of lower than 91 nA/mm2.The electrical characteristics remain normal after 1. 5 MeV electron irradiation of 1000 kGy. It is a promising radiation-resistant particle detector.
Finally, it is verified that the proposed SVPWM is actually a pulse-width modulation (PWM) technology based on line voltages.
Furthermore, the temperature of the guided molecules and its guiding efficiency can be controlled by adjusting the guiding voltages applied on electrodes.
Anode peak voltages (Eap) and their pH dependences were determined for the studied phenolic acids and flavonoids.
The solution of the steady-state problem is obtained on the basis of methods developed earlier for conditions typical of aerodynamical experiments and various electric currents and electrode voltages.
The use of both X- and Y-oriented double crystals as Q-switches in order to combine large electro-optic coefficients and low quarter-wave hold-off voltages with excellent thermal stability of the device is considered.
A stabilized high voltage power supply for an electrostatic analyzer is described in this paper. The design principle has been analyzed in some detail. The output voltage of this instrument may be varied continuously from ± 5 kv to ±20 kv. Within this range the voltage stability is better than ±0.015% for about 3 hours. The ripple voltage is one part in 16,000. This instrument had since served normally for more than two years and was shown to be sufficiently simple and reliable both in...
A stabilized high voltage power supply for an electrostatic analyzer is described in this paper. The design principle has been analyzed in some detail. The output voltage of this instrument may be varied continuously from ± 5 kv to ±20 kv. Within this range the voltage stability is better than ±0.015% for about 3 hours. The ripple voltage is one part in 16,000. This instrument had since served normally for more than two years and was shown to be sufficiently simple and reliable both in operation and maintenance.
This report deals with the cause of characteristics deffects of carbon composition film resistors.It is supposed that the main electrical properties of these resistors will be improved by adding the plasticizer of resin to the composition of films to raise the elasticity of films and the uniform distribution of carbon black in films.The report also gives a brief account of the functional mechanism of dibutyl phth-alate as a plasticizer in composition films and describes in detail the effects of the plasticizer...
This report deals with the cause of characteristics deffects of carbon composition film resistors.It is supposed that the main electrical properties of these resistors will be improved by adding the plasticizer of resin to the composition of films to raise the elasticity of films and the uniform distribution of carbon black in films.The report also gives a brief account of the functional mechanism of dibutyl phth-alate as a plasticizer in composition films and describes in detail the effects of the plasticizer on the temperature coefficients, voltage coefficients and noise levels of composition film resistors.The conclusion points out that 10% of dibutyl phthalate added to the composition of films will improve to a certain degree the above electrical properties with no adverse effects on the thermal stability.
Effects of hydrostatic pressure up to 18000 kg/cm2 on the current-voltage characteristics of germanium Esaki diodes are reported. The pressure dependence of the peak currents IP, valley currents Iv, peak voltages VP, valley voltages Vv, and the exponential excess currents Ix have been studied on sixteen germanium Esaki diodes. The results indicate that the semi-logarithmic plot of peak currents IP versus pressure P consists of two straight lines with different negative slopes. The intersecting point...
Effects of hydrostatic pressure up to 18000 kg/cm2 on the current-voltage characteristics of germanium Esaki diodes are reported. The pressure dependence of the peak currents IP, valley currents Iv, peak voltages VP, valley voltages Vv, and the exponential excess currents Ix have been studied on sixteen germanium Esaki diodes. The results indicate that the semi-logarithmic plot of peak currents IP versus pressure P consists of two straight lines with different negative slopes. The intersecting point occurs in a pressure range from 5000 kg/cm2 to 9000 kg/cm2. The peak voltages VP change only slightly with pressure, while the valley voltages Vv are independent of pressure within the limit of experimental errors. For most diodes the pressure dependence of the valley currents is the same as that of peak current. The onsets of the exponential excess currents move toward high voltages with pressure. The pressure dependences of the peak currents and exponential currents have been discussed. It is shown that the presence of two straight lines with different slopes may be related to different tunnelling processes. A pressure coefficiant of the energy gap Eg can be determined at a constant exponential excess current; the result is in good agreement with that given by other authors.
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