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finite potential well
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  finite potential well
Fixed exciton number level density for a finite potential well
      
In simple terms, one can think of a metalmolecule-metal junction as a finite potential well between two infinite metal electrodes.
      


In this paper we report the observation of allowed excitonic transitions between the n=1, 2,and 3 electron states and the heavy hole states of GaAs-Ga_(0.6)Al_(0.4)As mul-tiquantum well structures grown by home-made MBE system under 200 picosecondlaser pulses.The observed peaks are in fair agreement with the calculated valueswhen the finite potential well depth and nonparabolic nature of the GaAs Γ_6~c conduc-tion band are taken into account.The calculation itself can be used to determine thewell width...

In this paper we report the observation of allowed excitonic transitions between the n=1, 2,and 3 electron states and the heavy hole states of GaAs-Ga_(0.6)Al_(0.4)As mul-tiquantum well structures grown by home-made MBE system under 200 picosecondlaser pulses.The observed peaks are in fair agreement with the calculated valueswhen the finite potential well depth and nonparabolic nature of the GaAs Γ_6~c conduc-tion band are taken into account.The calculation itself can be used to determine thewell width with a satisfactory accoracy.

本文报道微微秒激光脉冲激发下分子束外延(MBE)生长的GaAs-Ca_(0.6)Al_(0.4)As多量子阱异质结构的光荧光特性.同时观察到发生在n=1,2,3电子子能带和相应重空穴子能带之间的激子跃迁.实验数据和理论计算符合较好.在理论计算中,我们考虑了实际势阱的有限深度和GaAs Γ_s~c导带的非抛物线性质.用所述计算方法确定阱宽可达到相当满意的精度.

Subbands and optical transitions in one-diimnsional quantum wells and superlattlces arecalculated on the basis of the Luttinger-Kohn effective mass theory,Dimensionless subbandenergy levels of holes in the infinite potential well are given for different ratios of the wellwidth W_n and W_y.Two groups of hole subbands in the finite potential well are also given.Properties of quatum energy levels and selection rules of optical transitions are discussed inquasi 1-D (W_x<

Subbands and optical transitions in one-diimnsional quantum wells and superlattlces arecalculated on the basis of the Luttinger-Kohn effective mass theory,Dimensionless subbandenergy levels of holes in the infinite potential well are given for different ratios of the wellwidth W_n and W_y.Two groups of hole subbands in the finite potential well are also given.Properties of quatum energy levels and selection rules of optical transitions are discussed inquasi 1-D (W_x<

用有效质量理论讨论了无限势阱和有限势阱中一维量子阱和超晶格的子能带和光跃迁.计算了势阶宽度W_x和W_y不同比值下,无限势阱中空穴的无量纲量子能级以及有限势阱中的两组空穴子带.讨论了准—维情形(W_x《W_y)和一维情形(W_x≈W_y)下量子能级的性质和光跃迁的选择规律.

The problem of electron transition in photoelectric effect is treated using a model of a finite potential well.All possible types of exciting by doule photon are disscussed.Also,the ratio of the transition probability excited by double photon to that excited by a single photon is calculated and the numerical solution is found within the range of Fermi level and work function of various common metals.The rate is about 10~(-7) ~10~(-9) ,and this means that,in fact,it is impossible that an electron is excited...

The problem of electron transition in photoelectric effect is treated using a model of a finite potential well.All possible types of exciting by doule photon are disscussed.Also,the ratio of the transition probability excited by double photon to that excited by a single photon is calculated and the numerical solution is found within the range of Fermi level and work function of various common metals.The rate is about 10~(-7) ~10~(-9) ,and this means that,in fact,it is impossible that an electron is excited by double photon in photoelectric effect.

运用有限深势阱模型处理光电效应中的电子跃迁问题.讨论了各种可能类型的双光子激发.计算了双光子激发与单光子激发跃迁几率之比,并在一般金属 Fermi 能级和功函数范围内求得了数值解.该比值约为10~(-7) ~10~(?),这说明光电效应中电子的双光子激发实际上是不可能的

 
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