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double heterojunction
相关语句
  双异质结
     STUDY OF 1.3μm InGaAsP/InP DOUBLE HETEROJUNCTION LIGHT EMITTING DIODES
     1.3μm InGaAsP/InP双异质结发光二极管的研究
短句来源
     Low Turn-on Voltage of InGaP/GaAsSb/GaAs Double Heterojunction Bipolar Transistor
     低开启电压的InGaP/GaAsSb/GaAs双异质结晶体管
短句来源
     Negative Resistance Characteristics of Si/SiGe/Si Double Heterojunction Bipolar Transistors
     Si/SiGe/Si双异质结晶体管(HBT)的负阻特性
短句来源
     The processing and characteristics of InGaN/AlGaN double heterojunction (DH) structure and of GaN epilayer grown on the α Al 2O 3 substrate by means of metalorganic chemical vapor deposition (MOCVD) technique are reviewed.
     评述利用MOCVD技术在α Al2 O3 衬底上生长GaN薄膜及InGaN/AlGaN双异质结 (DH)结构的工艺与特性 ;
短句来源
     A PROPOSAL OF DOUBLE HETEROJUNCTION DOUBLE DRIFT-REGION InP/InGaAsP/InP AVALANCHE DIODE
     双异质结双漂移区InP/InGaAsP/InP微波雪崩二极管的设想
短句来源
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  “double heterojunction”译为未确定词的双语例句
     Deep Level Luminescence of GaAs-Ga_(1-x)Al_xAs Double Heterojunction Laser
     GaAs-Ga_(1-x)Al_xAs双异质结激光器的深能级荧光
短句来源
     LIQUID-PHASE EPITAXY STUDY OF Ga_(1-x)Al_x As/GaAs DOUBLE HETEROJUNCTION LASERS
     Ga_(1-x)Al_xAs/GaAs双异质结激光器的液相外延研究
短句来源
     Voltage-current characteristics of GaAs-AI_x Ga_(1-x) As double heterojunction lasers
     GaAs-Al_2Ga_(1-x)As双异质结激光器的伏安特性
短句来源
     Processing and Characteristics of InGaN/AlGaN Double Heterojunction Structure and of GaN Buffer Layer Grown by MOCVD Techniques
     MOCVD生长InGaN/AlGaN双异质结构与GaN过渡层的工艺与特性
短句来源
     Relationship between Performance of a 1.3μm Double Heterojunction Super-Luminescent Diode and Its Operation Current and Temperature
     1.3μm DH-SLD的性能与工作电流和温度的关系
短句来源
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  相似匹配句对
     A sub-nanosecond GaAlAs double heterojunction laser
     亚毫微秒GaAlAs双异质结激光器
短句来源
     Recombination Sites of Carriers in Double Layer Heterojunction Devices
     双层异质结器件载流子复合位置的研究
短句来源
     HETEROJUNCTION PHOTOTRANSISTORS
     异质结光晶体管
短句来源
     It has the double functions.
     它具有双重功能:消极功能为限制原告滥诉,积极功能为通过司法生成权利。
短句来源
     Double chin
     美女拒绝双下巴
短句来源
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  double heterojunction
A comparative study of metamorphic InP/InGaAs double heterojunction bipolar transistors with InP and InAIP buffer layers grown b
      
Device passivation was evaluated using double heterojunction bipolar transistor structures with either an abrupt or graded emitter-base junction.
      
We have optimized the base electrode for InGaAs/InP based double heterojunction bipolar transistors with a buried emitter-base junction.
      
High quality InGaN thin films and InGaN/GaN double heterojunction (DH) structures have been epitaxially grown on c-sapphire substrates by MOCVD in a production scale multi-wafer-rotating-disc reactor between 770 to 840°C.
      
Photoluminescence, electrical properties of Schottky diodes, and electroluminescence from homo and double heterojunction diodes consistently supported p-type behavior of the ZnSe:N layers.
      
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A composite structure has been presented for one dimension microlenses and double heterojunction GaAs laser. The direction characteristic of radiation field is improved.

提出一线微透镜与双异质结GaAs激光器组合的结构,以改善其辐射场的方向性。

In this article, a double heterojunction double drift-region InP/InGaAsP/InP avalanche diode is proposed. The analysis manifests: the voltage madulation depth is 100% corresponding to efficiency of 64%. The small signal theory analysis of the device impedance is also given.

本文提出了一种双异质结双漂移区InP/InGaAsP/InP微波雪崩二极管的设想,分析表明:该器件的电压调制度可达100%,对应的直流到射频的转换率为64%,同时给出了器件的小信号理论分析。

GaAs-Ga1-x Alx As double heterojunction material was grown by liquid phase epitaxial technique, and small area high radiance light emitting diodes are made. The radiation power is above 100W/sr.cm2, output power of the tail fibre (inner diameter 60μm N.A.=0.17) is 200μW, and extrapolated life reaches 105 hours. It is already being used in the 1.8km 8.448 Mb/s PCM-120 route optic fibre telephone communication system. Analysis is made on the operational characteristics of the diodes. Factors affecting its...

GaAs-Ga1-x Alx As double heterojunction material was grown by liquid phase epitaxial technique, and small area high radiance light emitting diodes are made. The radiation power is above 100W/sr.cm2, output power of the tail fibre (inner diameter 60μm N.A.=0.17) is 200μW, and extrapolated life reaches 105 hours. It is already being used in the 1.8km 8.448 Mb/s PCM-120 route optic fibre telephone communication system. Analysis is made on the operational characteristics of the diodes. Factors affecting its proper use and approaches for improvement are discussed.

用液相外延技术生长GaAs-Ga_(1-X)Al_XAs双异质结材料,并制成小面积高辐射度发光二极管。辐射度高达100w/sr·cm~2以上,尾纤(芯径60μm,N.A.=0.17)输出功率最高达200μW,外推工作寿命10~5小时。已用于1.8公里,8.448Mb/S,PCM-120路光纤电话通信系统。对器件的工作特性进行了分析,讨论了影响因素及改进途径。

 
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