助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   programming voltage 的翻译结果: 查询用时:0.2秒
图标索引 在分类学科中查询
所有学科
无线电电子学
更多类别查询

图标索引 历史查询
 

programming voltage
相关语句
  编程电压
     Retention Reliability Enhanced SONOS NVSM with Scaled Programming Voltage
     SONOS自持半导体存储器:记忆时间可靠性与低编程电压(英文)
短句来源
     In order to supply the E2PROM unit with the high programming voltage under written process, ten stage serial voltage doubler charge pump circuit is designed, compared with the general Dickson charge pump circuit, this circuit is more efficient, and can work under lower voltage.
     对比通用Dickson式电荷泵电路,设计了一种十级级联倍压器电荷泵电路,为E2PROM单元写操作提供所需的高编程电压
短句来源
     Scaling the programming voltage, while still maintaining 10 year data retention time, has been always a big challenge for Polysilicon Oxide Nitride Oxide Silicon (SONOS) researchers.
     降低编程电压 ,同时仍保持十年的数据记忆时间 ,一直是多晶硅 氮化硅 氧化硅 硅(SONOS)研究人员面临的一个巨大挑战。
短句来源
  “programming voltage”译为未确定词的双语例句
     Voltage doubler charge pump circuit can generate the programming voltage over 17 V. the cycling redundancy check circuit can do the cycling redundancy check and the generation of cycling redundancy check code correctly.
     级联倍压器电荷泵电路可以产生超过17V的编程电路; 循环冗余校验电路可以正确完成循环冗余校验和循环冗余校验码产生功能。
短句来源
     In order to evaluate the process parameters of two-polysilicon FLOTOX EEPROM,the electrical model of EEPROM is introduced. The relation between threshold voltage and writing time,programming voltage,tunnel area and floating area is simulated.
     介绍了 EEPROM的电学模型 ,模拟分析了阈值电压变化与写入时间、写入电压、隧道孔面积、浮栅面积的关系 .
短句来源
     The experiment dada show that the leakage of ONO anti-fuse medium is smaller than 1×10~(-14)? A,stability is high,changing amount of on-state resistance is very small over a wide temperature range,and anti-fuse programming voltage is smaller than 15?
     试验数据表明:ONO结构反熔丝介质漏电低于1×10-14A,稳定性高,在较大温度范围内on-state电阻变化小.
短句来源
  相似匹配句对
     Programming in Mathematica
     深入Mathematica编程
短句来源
     IntegerConvexQuadratic Programming
     整凸二次规划
短句来源
     Retention Reliability Enhanced SONOS NVSM with Scaled Programming Voltage
     SONOS自持半导体存储器:记忆时间可靠性与低编程电压(英文)
短句来源
     voltage. with the increase of r.
     放电电压增加 ,热稳定性增加。
短句来源
     APPLICATION OF OBJWCTIVK-PROGRAMMING METHOD TO VOLTAGE MANAGEMENT OF DISTRIBUTION NETWORK
     目标规划在供用电网电压管理中的应用
短句来源
查询“programming voltage”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  programming voltage
This current and the blocking resistance make programming voltage drop between the two electrodes of AF.
      
This results in a high programming voltage of 80 V or more.
      
To make the setting permanent, the OTP register must be programmed by applying a programming voltage.
      
To set the external programming voltage reading gain constant to 1.
      
Programming an antifuse requires extra circuitry to deliver the high programming voltage and a relatively high current of 5 mA or more.
      
更多          


A voltage doubler charge pump is presented, which is based on the Dickson charge pump and driven by a clock circuit with self reference voltage Because it guarantees the precision of the programming voltage pulse, the charge pump could minimize offset of the threshold voltage of the memory cell, reduce the complexity of the peripheral circuit and enhance the reliability of the whole system

提出了一种基于 Dickson电荷泵电路 ,由自带参考电压的时钟电路驱动 ,并与耦合倍压电路相结合的片上升压电路。该电路由于保证了输出编程电压的精确度 ,从而控制了存储单元阈值电压的偏移 ,降低了对外围电路的要求 ,保证了整个系统的可靠性

Scaling the programming voltage, while still maintaining 10 year data retention time, has been always a big challenge for Polysilicon Oxide Nitride Oxide Silicon (SONOS) researchers. We describe progress in the design and scaling of SONOS nonvoloatile memory devices. The deterioration of the Si SiO 2 interface is associated with the degradation of long term retention in SONOS Nonvolatile Semiconductor Memory (NVSM) devices. Two step high temperature deuterium anneals, applied in SONOS device fabrcation...

Scaling the programming voltage, while still maintaining 10 year data retention time, has been always a big challenge for Polysilicon Oxide Nitride Oxide Silicon (SONOS) researchers. We describe progress in the design and scaling of SONOS nonvoloatile memory devices. The deterioration of the Si SiO 2 interface is associated with the degradation of long term retention in SONOS Nonvolatile Semiconductor Memory (NVSM) devices. Two step high temperature deuterium anneals, applied in SONOS device fabrcation for the first time, improves the endurance characteristics and retention reliablility over traditional hydrogen anneals. We have realized -9V/+10V (1ms) programmable SONOS devices ensuring 10 years retention time after 10 7 Erase/Write cycles at 85℃. We introduce scaling considerations and process optimization along with experiments and SONOS device characterization. An FPGA based measurement system is described for the dynamic characterization of SONOS nonvolatile memory devices.

降低编程电压 ,同时仍保持十年的数据记忆时间 ,一直是多晶硅 氮化硅 氧化硅 硅(SONOS)研究人员面临的一个巨大挑战。本文介绍SONOS可自持存储器器件设计和降低编程电压方面的进展。硅 氧化硅界面态的退化损害SONOS自持半导体存储器记忆时间的长期可靠性。首次应用在SONOS器件制作工艺上的双步高温氘退火技术 ,与传统的氢退火相比 ,显著提高了器件的耐久性能和记忆时间可靠性。我们研制成功 - 9伏 / + 10伏 (1毫秒 )可编程SONOS存储器 ,在摄氏 85度 ,一千万个擦除 /写入操作后 ,仍能确保十年的记忆时间。本文介绍编程电压降低方面的设计考虑 ,制作工艺的优化 ,描述实验过程和SONOS器件的测试 ,以及用于SONOS自持存储器动态性能测试的基于可编程门阵列的测量系统。

In order to evaluate the process parameters of two-polysilicon FLOTOX EEPROM,the electrical model of EEPROM is introduced.The relation between threshold voltage and writing time,programming voltage,tunnel area and floating area is simulated.Based on the simulating results and 0.6μm CMOS process technique,the two-polysilicon FLOTOX EEPROM is fabricated.Finally,the feasibility of simulating results is verified by PCM testing results.Therefore,the process evaluation of FLOTOX EEPROM will be the ground work...

In order to evaluate the process parameters of two-polysilicon FLOTOX EEPROM,the electrical model of EEPROM is introduced.The relation between threshold voltage and writing time,programming voltage,tunnel area and floating area is simulated.Based on the simulating results and 0.6μm CMOS process technique,the two-polysilicon FLOTOX EEPROM is fabricated.Finally,the feasibility of simulating results is verified by PCM testing results.Therefore,the process evaluation of FLOTOX EEPROM will be the ground work for manufacturing high quality memory cell.

介绍了 EEPROM的电学模型 ,模拟分析了阈值电压变化与写入时间、写入电压、隧道孔面积、浮栅面积的关系 .根据模拟结果 ,采用 0 .6μm CMOS工艺 ,对双层多晶硅 FL OTOX EEPROM进行了流片 ,PCM的测试结果验证了模拟结果在实际工艺中的可行性 .模拟得出的工艺参数评价为制造高性能的存储单元打下了坚实的基础

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关programming voltage的内容
在知识搜索中查有关programming voltage的内容
在数字搜索中查有关programming voltage的内容
在概念知识元中查有关programming voltage的内容
在学术趋势中查有关programming voltage的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社