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titanium film     
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  钛膜
     The implanted helium may be stably preserved up to the 68 percent after keeping a long time of 210 d in the nanocrystal titanium film at the room temperature environment, and the HeTi atomic ratio reaches to 526%.
     室温下经210d后,氦在该纳米晶粒钛膜中的剂量保持达68%,其He Ti原子比为52 6%;
短句来源
     Helium concentration profile, preservation dose and release rate from a nanocrystal titanium film implanted with helium at an energy of 100 keV and dose of 22×1018 cm-2 are measured by proton Rutherford backscattering technique in a range from room temperature to 400 ℃.
     在室温~400℃范围内,用卢瑟福质子背散射技术测量了100keV、注入剂量2 2×1018cm-2的纳米晶粒钛膜中氦的浓度分布、不同温度下的剂量保持及其浓度释放。
短句来源
     The Study on Oxide Layer on the Surface of Titanium Film in the Oxygen
     钛膜表面氧气氧化层研究
短句来源
     Researching process of oxidation in the oxygen is conducted on the surface of titanium film of molybdenum substrate.
     研究了钼基钛膜表面氧气氧化工艺;
短句来源
     It indicats that the oxide layers of titanium film surface possess the blocking property of deuterium diffusion.
     试样变温吸氘时,在相同的升温速率和相同的初始氘气压力下,吸氘温度随氧化层厚度的增加而升高,表明钛膜表面氧化层具有一定的阻氘性能。
短句来源
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  钛薄膜
     Thus, high speed at low temperature without composition divergence is achieved, with this device we investigated the properties of the nitrogenized titanium film and the conditions of the formation of the film (the sputtering power, sputtering atmospheric ratio and high frequency bias on the baseplate).
     利用这种装置还对氮化钛薄膜物性同成膜的各种实验条件,如溅射功率、溅射气氛、基板高频偏压等进行了系统研究。
短句来源
     The surface of AlN ceramic was first sputtered by radio frequency (R.F.) with aluminum or titanium film. And then brazing with AgCu19.5Ti3In5 filler as well as diffusion bonding processes were investigated to join the different surface modified AlN ceramics to Cu and FeNi42 metals.
     首先采用射频溅射在AlN陶瓷表面沉积铝、钛薄膜,然后用真空钎焊和扩散焊实现经表面改性的AlN陶瓷与Cu和FeNi42等金属的连接。
短句来源
  ti膜
     In this paper, we computed and found the main parameter for facture of Ti:LiNbO3 waveguide, by the function of Ti diffusion profile in LiNbO3, and the waveguide mode's cut-off condition. The parameters include waveguide width: 8μm, titanium film thickness:50~60nm, index change: 0.006, diffusion temperature: 1050 and diffusion time: 9~10 hours.
     本文从Ti扩散特性和波导导模截止条件入手,计算并确定了制作单模Ti∶LiNbO_3波导的主要参数,如:波导宽8μm,Ti膜厚50~60nm,扩散温度1050℃,扩散时间9~10h等。
短句来源
     The results showed that bombarding to titanium film with low-energy nitrogen ion beams, Ti 2N phase with (204)preferential orientation can be formed, and strengthened titanium films.
     结果表明 :用低能氮离子束对Ti膜进行轰击可以形成Ti2 N相 ,在 (2 0 4)晶面出现一定的择优取向 ,并对Ti膜层有一定的强化作用 ;
短句来源
     Principles of cold rolling with multi-high cold-rolling mill are introduced in this text and Titanium film with thickness less than 1.5 μm has been made with the 32-high cold-rollin mill.
     叙述了多辊轧机轧制金属薄膜原理,以Ti膜制备为例,借助多辊轧机冷轧技术进行1.5μm厚钛薄带的制备工艺研究。
短句来源
     Thin titanium film can be oxidized completely with scanning probe microscope (SPM) via anodic oxidation to form Metal-Insulator-Metal (MIM) structure to fabricate various nanometer scale electronic and opto-electronic devices, such as single electron transistor (SET), high electron mobility transistor, single electron memory (SEM) and photoconductive switch.
     利用扫描探针显微镜针尖诱导氧化加工纳米级Ti膜,形成的氧化物TiOx和Ti膜,构成金属-绝缘体-金属结构,从而可以实现加工各种纳米器件,如单电子晶体管、高电子迁移率晶体管、光导开关和单电子存储器。
短句来源
     Thin titanium film can be oxidized completely with scanning probe microscope (SPM) via anodic oxidation to form Metal-Insulator-Metal (MIM) structure to fabricate various nanometer scale electronic and opto-electronic devices, such as such as single electron transistor (SET), high electron mobility transistor, single electron memory (SEM) and photoconductive switch.
     利用扫描探针显微镜针尖诱导氧化加工纳米级Ti膜,形成的氧化物TiOx和Ti膜,构成金属-绝缘体-金属结构,从而可以实现加工各种纳米器件,如单电子晶体管、高电子迁移率晶体管、光导开关和单电子存储器。
短句来源
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  钛膜的
     Investigation of Titanium Film Deposited by Arc Ion Processing on A1_2O_3 Ceramics
     Al_2O_3陶瓷片上沉积钛膜的研究
短句来源
     Microstructure Analysis of Helium Implantation on Nanometer Titanium Film at Room Temperature
     常温氦离子注入纳米钛膜的微结构分析
短句来源
     2. Fabrication and testing methods of nano thin film were developed. Ultra-thin titanium film was deposited with dual facing target sputtering system, the accurate thickness of the film was measured with bench-top stylus profiler, the surface flatness of the film was measured with AFM and the I-V curve of the film was measured with STM. The measured results indicated that the deposited titanium film was very flat and homogeneous and it had excellent conductivity.
     2.开展了纳米薄膜的制备及检测方法的研究,利用对向靶直流磁控溅射方法制备纳米钛膜,利用台式探针轮廓仪测量了钛膜的精确厚度,AFM测量了钛膜的表面平整度,STM测量了钛膜的I-V曲线,表明制备的钛膜具有很高的表面平整度和良好的导电性;
短句来源
     Applicable nano metric titanium-titanium oxide line-titanium tunneling junction was fabricated with dual-facing target sputtering,micro-electronic optical lithography and atomic force microscope anodic oxidation. The thickness of titanium film of the fabricated junction was 3nm and the width of the titanium oxide line was 60.5nm.
     结合对向靶直流磁控溅射技术、微电子光刻方法和原子力显微镜阳极氧化加工方法制备了实用的纳米钛-钛氧化线-钛隧道结,钛膜的厚度为3·02nm.
短句来源

 

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      titanium film
    A thicker titanium film results in poor bond-ability and lower bonding strength, because the thicker titanium film cannot be removed by an appropriate range of ultrasonic power during TS bonding.
          
    An appropriate, titanium film thickness of 3.7 nm is proposed in this work.
          
    The properties of TiN/TiSi2 bilayer formed by rapid thermal annealing (RTA) in an NH3 ambient after the titanium film is deposited on the silicon substrate is investigated.
          
    The results show that a fine grained precursor layer exist in between the well developed C-54 silicide layer and the unreacted titanium film.
          
    We have studied changes in the isotopic composition of niobium and palladium as well as of titanium film structures over ceramics enriched in deuterium.
          
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    To obtain high speed sputtering at low temperature without composition divergence two targets of the same size are placed in parallel and face to face in an external magentic field with the direction perpendicular to the normal of the targets. The study of the working principle of this device and properties of the film indicates that the electrons emitted from the targets ionize effcc- tively the air in the sputtering cavity and forms a body of plasma of high density under the action of the magnetic field. Besides,...

    To obtain high speed sputtering at low temperature without composition divergence two targets of the same size are placed in parallel and face to face in an external magentic field with the direction perpendicular to the normal of the targets. The study of the working principle of this device and properties of the film indicates that the electrons emitted from the targets ionize effcc- tively the air in the sputtering cavity and forms a body of plasma of high density under the action of the magnetic field. Besides, the bombardment of high energy electrons on the baseplate can be avoided. Thus, high speed at low temperature without composition divergence is achieved, with this device we investigated the properties of the nitrogenized titanium film and the conditions of the formation of the film (the sputtering power, sputtering atmospheric ratio and high frequency bias on the baseplate). We obtained a film with H. hardness of 3,500-4,000, and found that the hardness of the film could be measured by the dependence of reflectivty on the wavelength of light.

    为了实现高速、低温、无成份偏析的溅射法,将两个同样尺寸的靶相互平行放置,并在靶面垂直方向上加入外磁场组成一种新型的溅射装置。通过对这种结构的溅射装置的工作原理和实际性质研究表明,从靶面放出来的电子可以高效率地使溅射腔内的气氛电离,并且在磁场作用之下,形成高密度的等离子体。另外还可以完全控制高能电子对基板的轰击,从而实现了高速、低温、无成份偏析的溅射。利用这种装置还对氮化钛薄膜物性同成膜的各种实验条件,如溅射功率、溅射气氛、基板高频偏压等进行了系统研究。除获得了维氏硬度3500~4000左右的优质氮化钛薄膜以外,还得到了薄膜硬度可以通过反射率同光波长的依存关系进行予测的有益结论。

    The reouction of titanium film formed in phosphoric acid was studied by potentiody namic voltametry and XPS technique, and the electronic conductivity of passive films was studied by analysing the kinetics of reduction of Fe(CN)64-/Fe(CN)63- at passive film clectrode. The conclusions are as follows:(1) The reduction process consists of charge transfer (H++e H) and chemical transformation (TiO2+H→TiOO11, TiOOH+H→TiO+H2O etc.), and the later one ia the rate determining step. (2) The passive films...

    The reouction of titanium film formed in phosphoric acid was studied by potentiody namic voltametry and XPS technique, and the electronic conductivity of passive films was studied by analysing the kinetics of reduction of Fe(CN)64-/Fe(CN)63- at passive film clectrode. The conclusions are as follows:(1) The reduction process consists of charge transfer (H++e H) and chemical transformation (TiO2+H→TiOO11, TiOOH+H→TiO+H2O etc.), and the later one ia the rate determining step. (2) The passive films formed between 1 and 8 V are heavily "doped"' n-type semiconducting films. The "donor"density for films of different thickness can be calculated from the (?)D which can be conveniently determined by measuring the slope over the linear regioa in the quasi-steady ptate polarization curves of the redox couple.

    用动电位伏安法和XPS等研究钛在磷酸介质中形成的阳极钝化膜的还原;用暗态下铁氰电对在钛阳极钝化膜上的反应动力学研究膜的导电特性。结果表明:1)膜的还原程度视阴极极化条件而异,还原过程由传荷步骤(H~++eH)和化学转化步骤(TiO_2+H→TiOOH,TiOOH+H→TiO+H_2O等)构成,而且后者是速度控制步骤.2)在电位1~8V内形成的钛钝化膜均具有n-型半导电特性,“掺杂”浓度随钛阳极钝化膜增厚而减小。

    Titanium film is deposited on silicon wafer by means of electron beam evaporation andrefractory metal silicide TiSi_2 is formed by subsequent vacuum rapid thermal annealing at750℃ for 10".SEM, AES and PN junction reverse current measurements show that thecontact properties of TiSi_2 to Si are superior to that of Al to Si.The specific contact resis-tance of TiSi_2 to N~±Si by circular transmission line model extrapolation method is found to beabout one order of magnitude lower than that of Al to Ni±Si.TiSi_2...

    Titanium film is deposited on silicon wafer by means of electron beam evaporation andrefractory metal silicide TiSi_2 is formed by subsequent vacuum rapid thermal annealing at750℃ for 10".SEM, AES and PN junction reverse current measurements show that thecontact properties of TiSi_2 to Si are superior to that of Al to Si.The specific contact resis-tance of TiSi_2 to N~±Si by circular transmission line model extrapolation method is found to beabout one order of magnitude lower than that of Al to Ni±Si.TiSi_2 may be a new promi-sing interconnection material in LSI or VLSI for scaling down the device dimensions and im-proving the performence of submicrometer N channel devices.

    用电子束蒸发方法在硅上淀积一薄层Ti膜后,经750℃、10秒的真空快速热退火即可形成难熔金属硅化物TiSi_2.通过扫描电镜、俄歇能谱和PN结反向电流的检测,证实其对硅的接触性能较铝对硅的优越.由圆性传输线模型外推法测得TiSi_2对N~+-Si的接触电阻率要比Al对N~+-Si的低一个量级.这使 TiSi_2作为 LSI、VLSI中互连线的新材料,在缩小器件尺寸和改善亚微米N沟器件性能方面是大有前途的.

     
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