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threshold characteristics
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  阈值特性
     From the Tm~(3+) rates equations, pumped at CW 793nm laser, the Tm~(3+)-doped silica fiber laser threshold characteristics, laser output characteristics, that correlated to parameters of cavity are discussed.
     从Tm~(3+)的稳态速率方程出发,结合谐振腔结构特点,在输出793nm的LD激光器作为泵浦源的情况下,给出了双包层光纤激光器的振荡阈值特性、激光输出特性和激光器谐振腔结构参数的关系。
短句来源
     Investigation of Loss and Threshold Characteristics in the Laser Diode with External Feedback
     外腔反馈半导体激光器的损耗和阈值特性研究
短句来源
     Analysis of threshold characteristics of HH model and parameter fitting.
     HH模型阈值特性分析及参数空间拟合
短句来源
     Low temperture (77 K) threshold characteristics of N-channel MOSFET's with a selfaligned polysilicon gate are considered both theoretically and experimentaly in this paper.
     本文对N沟多晶硅栅MOSFET的低温(77 K)阈值特性进行了理论和实验研究.
短句来源
     Beam Threshold Characteristics of Beam Fanning Effect in Ce∶KNSBN Crystal
     Ce∶KNSBN晶体光扇效应的入射光强度阈值特性研究
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  “threshold characteristics”译为未确定词的双语例句
     Conclusion The cell killing effect in Hela cells exposed to β radiation of 32 P has the threshold characteristics in terms of dose,dose rate and radiation time;
     结论 32 Pβ射线照射Hela细胞的生物反应具有剂量、时间、剂量率的阈值特点。
短句来源
     Driving current and sub threshold characteristics of CMOS FinFET on Si substrate with actual gate length of 110nm are studied.
     分析了实际栅长为 110 nm的硅基 CMOS Fin FET的驱动电流和亚阈值特性 .
短句来源
     A THEORETICAL ANALYSIS TO THE THRESHOLD CHARACTERISTICS OF THE INJECTED STRIPE-GEOMETRY SEMICONDUCTOR DH LASERS
     条形注入式半导体双异质结(DH)激光器阈值特性的理论分析
短句来源
     3. The rate equations of theory Yb~3+-DCFL is constituted ,which include the effect of the distribution waster along the fiber with and Spontaneous emission . By using the rate equations and Rounge—Kutta way, output power and the threshold characteristics of DCFL are analyzed theoretically, such as the fiber length and cavity reflectivity are analyzed with a comprehensible model .
     3.考虑到双包层光纤激光器的特殊结构、自发辐射和光纤的分布损耗等因素建立速率方程理论模型,利用龙格—库塔法(Rounge-Kutta)求出输出功率、增益特性等与光纤长度的关系,再根据速率方程理论推导双包层光纤激光器泵浦阈值、斜率效率等表达式。
短句来源
     Results Data showed that the cell killing effects were related to dose,dose rate and radiation time with seemingly threshold characteristics.
     结果 单次照射显示Hela细胞的剂量、时间、剂量率的阈值特点。
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  相似匹配句对
     And the characteristics of the G.
     通过仿真和实验,也验证了G.
短句来源
     The characteristics of G.
     论文首先对语音编码的各种方案进行了比较,并对G.
短句来源
     The Denoise based on Threshold of Noise Characteristics
     基于噪声特性阀值的语音去噪
短句来源
     Spectral Characteristics of Laser Ablation Threshold of Biotissue
     生物组织激光消融阈值的光谱特性
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  threshold characteristics
A method of analytical determination of the constant λ relating the two basic threshold characteristics Kth and δth was developed.
      
Calculated evaluations of the threshold characteristics for ferritic-pearlitic steels
      
Threshold Characteristics of Infrared Photodetectors Based on GeSi/Si Heterojunctions
      
Limiting Modes for the Threshold Characteristics of IR Photodetectors Based on Silicon-Platinum Silicide Barriers with a Highly-
      
Threshold characteristics of the surface-kink instability of a semiconductor plasma in a germanium plate
      
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A new high speed integrated logic has been described. Instead of a single type of cell gate which is used in most logic IC's, the new logic here described is based on several types of basic cells to synthesize a logic system. Therefore, the threshold characteristic will not be the common requirement for each type of cell gates. The main logic unit in DYL is a very high-speed linear AND-OR gate made with simple technology (without threshold). A four-bit full adder carry chain specimen has been developed...

A new high speed integrated logic has been described. Instead of a single type of cell gate which is used in most logic IC's, the new logic here described is based on several types of basic cells to synthesize a logic system. Therefore, the threshold characteristic will not be the common requirement for each type of cell gates. The main logic unit in DYL is a very high-speed linear AND-OR gate made with simple technology (without threshold). A four-bit full adder carry chain specimen has been developed with wide-line photolithography. It's time-delay measured for each carry stage is about 1 ns for the front edge of the signal and even much smaller for the trailing edge. The maximum power dissipation per gate is about 12.5mW. This new logic has been analysed and compared with several conventional integrated logic circuits.

介绍了一种新的高速集成逻辑电路。它不同于常用集成逻辑电路那样基于一种基本单元门电路,而是由几种基本单元组合而成所需的逻辑系统,因而并不要求每种基本单元都有阈值特性。其主要基本单元就是一种高速线性“与或”门,工艺很简单。用较粗尺寸工艺试作的四位全加器进位链样品,实测速度为每级进位上升边延迟1ns,下降边延迟更小。每门最大功耗12.5mw。文中还与几种原有的集成辑逻电路进行了分析比较。

This paper describes computer-aided design of a sense amplifier circuit in a magnetic core memory.The sense amplifier circuit has been modified by analyzing its threshold characteristic. The analysis and design of the circuit were conducted by using the circuit analytical system DFX-1. A better electrical performance and a remarkable improvement of the circuit yields have been achieved.

本文概要地介绍了计算机辅助一种磁芯读放电路的改进设计,解析了读放电路的门槛特性,阐明了利用电路分析系统DFX-1对该电路的分析与设计。 该电路的设计达到了预期的目标,具有良好的电性能,而且成品率,特别是高档产品的合格率有了显著的提高。

Numerical calculation and theoretical analysis have been made for the threshold characteristics of the injected stripe-geometry DH semiconductor Lasers.In addition,We have given an explanation for the phenomena that the tops of carrier density profiles tend to be flat or concave. Then we have discussed their influences to the Characteri stics of device. The Calculated results are fairly coincident with those of experiments. The method provided here will be suitable to the structures sueh as conventional...

Numerical calculation and theoretical analysis have been made for the threshold characteristics of the injected stripe-geometry DH semiconductor Lasers.In addition,We have given an explanation for the phenomena that the tops of carrier density profiles tend to be flat or concave. Then we have discussed their influences to the Characteri stics of device. The Calculated results are fairly coincident with those of experiments. The method provided here will be suitable to the structures sueh as conventional stripe-geometry,BH,SBH,PCW,CDH and CSP etc.

本文对条形注入式半导体DH激光器的阈值特性作了数值计算和理论分析。对PCW结构激光器载流子浓度剖面顶峰趋于平坦或中心下凹的现象作了解释并分析了这种现象所造成的后果。计算结果和实验结果符合较好。文中所提供的方法可适用于通常条形,BH、SBH、PCW、CDH、CSP等各种结构的激光器。

 
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