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threshold characteristics
相关语句
  阈值特性
    Analysis on Threshold Characteristics in Semicond uctor Microcavity Lasers
    半导体微腔激光器阈值特性分析
短句来源
    From the Tm~(3+) rates equations, pumped at CW 793nm laser, the Tm~(3+)-doped silica fiber laser threshold characteristics, laser output characteristics, that correlated to parameters of cavity are discussed.
    从Tm~(3+)的稳态速率方程出发,结合谐振腔结构特点,在输出793nm的LD激光器作为泵浦源的情况下,给出了双包层光纤激光器的振荡阈值特性、激光输出特性和激光器谐振腔结构参数的关系。
短句来源
    Low temperture (77 K) threshold characteristics of N-channel MOSFET's with a selfaligned polysilicon gate are considered both theoretically and experimentaly in this paper.
    本文对N沟多晶硅栅MOSFET的低温(77 K)阈值特性进行了理论和实验研究.
短句来源
    So in this thesis, the pumping threshold characteristics are studied via experiment, theoretical analysis and numerical simulation.
    本文主要从实验、理论及数值模拟三方面对随机激光的泵浦阈值特性进行了一定的研究。
短句来源
    The threshold characteristics of ZnS:Mn a. c. thin-filmelectrolumi-nescent (ACTFEL) devices have been expanded by driving the deviceswith an asymmetric stepped pulse train.
    在一种非对称阶梯脉冲信号的驱动下,ZnS∶Mn 交流薄膜电致发光(ACTFEL)器件的阈值特性得到了展开。
短句来源
更多       
  阈值特性
    Analysis on Threshold Characteristics in Semicond uctor Microcavity Lasers
    半导体微腔激光器阈值特性分析
短句来源
    From the Tm~(3+) rates equations, pumped at CW 793nm laser, the Tm~(3+)-doped silica fiber laser threshold characteristics, laser output characteristics, that correlated to parameters of cavity are discussed.
    从Tm~(3+)的稳态速率方程出发,结合谐振腔结构特点,在输出793nm的LD激光器作为泵浦源的情况下,给出了双包层光纤激光器的振荡阈值特性、激光输出特性和激光器谐振腔结构参数的关系。
短句来源
    Low temperture (77 K) threshold characteristics of N-channel MOSFET's with a selfaligned polysilicon gate are considered both theoretically and experimentaly in this paper.
    本文对N沟多晶硅栅MOSFET的低温(77 K)阈值特性进行了理论和实验研究.
短句来源
    So in this thesis, the pumping threshold characteristics are studied via experiment, theoretical analysis and numerical simulation.
    本文主要从实验、理论及数值模拟三方面对随机激光的泵浦阈值特性进行了一定的研究。
短句来源
    The threshold characteristics of ZnS:Mn a. c. thin-filmelectrolumi-nescent (ACTFEL) devices have been expanded by driving the deviceswith an asymmetric stepped pulse train.
    在一种非对称阶梯脉冲信号的驱动下,ZnS∶Mn 交流薄膜电致发光(ACTFEL)器件的阈值特性得到了展开。
短句来源
更多       
  “threshold characteristics”译为未确定词的双语例句
    Driving current and sub threshold characteristics of CMOS FinFET on Si substrate with actual gate length of 110nm are studied.
    分析了实际栅长为 110 nm的硅基 CMOS Fin FET的驱动电流和亚阈值特性 .
短句来源
    3. The rate equations of theory Yb~3+-DCFL is constituted ,which include the effect of the distribution waster along the fiber with and Spontaneous emission . By using the rate equations and Rounge—Kutta way, output power and the threshold characteristics of DCFL are analyzed theoretically, such as the fiber length and cavity reflectivity are analyzed with a comprehensible model .
    3.考虑到双包层光纤激光器的特殊结构、自发辐射和光纤的分布损耗等因素建立速率方程理论模型,利用龙格—库塔法(Rounge-Kutta)求出输出功率、增益特性等与光纤长度的关系,再根据速率方程理论推导双包层光纤激光器泵浦阈值、斜率效率等表达式。
短句来源
    I V characteristics and sub threshold characteristics,as well as the short channel effect(SCE) are carefully investigated.
    研究了 FINFET的 I- V特性、亚阈值特性、短沟道效应等 .
短句来源
    Based on the equivalent cavity model, the threshold characteristics of an fiber grating external-cavity semiconductor laser (FGECL) are investigated by the multi-parameter optimization of two antireflection and high reflection coatings, and the external-cavity length, and the results of the multi-parameter optimization are compared with that of the single-parameter optimization.
    基于等效腔模型,采用多参量优化的多目标遗传算法优化了光纤光栅外腔半导体激光器(FGECL)管芯的两个端面反射率和外腔长度.
短句来源
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  threshold characteristics
A method of analytical determination of the constant λ relating the two basic threshold characteristics Kth and δth was developed.
      
Calculated evaluations of the threshold characteristics for ferritic-pearlitic steels
      
Threshold Characteristics of Infrared Photodetectors Based on GeSi/Si Heterojunctions
      
Limiting Modes for the Threshold Characteristics of IR Photodetectors Based on Silicon-Platinum Silicide Barriers with a Highly-
      
Threshold characteristics of the surface-kink instability of a semiconductor plasma in a germanium plate
      
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A new high speed integrated logic has been described. Instead of a single type of cell gate which is used in most logic IC's, the new logic here described is based on several types of basic cells to synthesize a logic system. Therefore, the threshold characteristic will not be the common requirement for each type of cell gates. The main logic unit in DYL is a very high-speed linear AND-OR gate made with simple technology (without threshold). A four-bit full adder carry chain specimen has been developed...

A new high speed integrated logic has been described. Instead of a single type of cell gate which is used in most logic IC's, the new logic here described is based on several types of basic cells to synthesize a logic system. Therefore, the threshold characteristic will not be the common requirement for each type of cell gates. The main logic unit in DYL is a very high-speed linear AND-OR gate made with simple technology (without threshold). A four-bit full adder carry chain specimen has been developed with wide-line photolithography. It's time-delay measured for each carry stage is about 1 ns for the front edge of the signal and even much smaller for the trailing edge. The maximum power dissipation per gate is about 12.5mW. This new logic has been analysed and compared with several conventional integrated logic circuits.

介绍了一种新的高速集成逻辑电路。它不同于常用集成逻辑电路那样基于一种基本单元门电路,而是由几种基本单元组合而成所需的逻辑系统,因而并不要求每种基本单元都有阈值特性。其主要基本单元就是一种高速线性“与或”门,工艺很简单。用较粗尺寸工艺试作的四位全加器进位链样品,实测速度为每级进位上升边延迟1ns,下降边延迟更小。每门最大功耗12.5mw。文中还与几种原有的集成辑逻电路进行了分析比较。

The threshold characteristics of ZnS:Mn a.c.thin-filmelectrolumi-nescent (ACTFEL) devices have been expanded by driving the deviceswith an asymmetric stepped pulse train.The threshold electric fieldstrength E_1 causing luminescence,the electric field strength E_i ne-cessary to ionize deep traps and the electric field strength E_(tf) requir-edto initiate tunneling from interface states near the Fermi level,arein the ratio E_1

The threshold characteristics of ZnS:Mn a.c.thin-filmelectrolumi-nescent (ACTFEL) devices have been expanded by driving the deviceswith an asymmetric stepped pulse train.The threshold electric fieldstrength E_1 causing luminescence,the electric field strength E_i ne-cessary to ionize deep traps and the electric field strength E_(tf) requir-edto initiate tunneling from interface states near the Fermi level,arein the ratio E_1

在一种非对称阶梯脉冲信号的驱动下,ZnS∶Mn 交流薄膜电致发光(ACTFEL)器件的阈值特性得到了展开。结果表明;器件的发光阈值场强 E_l小于深能级离化场强 E_i,而后者又小于电子从界面费米能级附近隧穿所需要的场强E_(tf),即 E_l

Low temperture (77 K) threshold characteristics of N-channel MOSFET's with a selfaligned polysilicon gate are considered both theoretically and experimentaly in this paper. Theoretical analysis and measured results are in good agreement. Relative to the device threshold behavior at room temperature, improvements in the subthreshold and threshold -voltage characteristics and in the substrate sensitivity at 77 K are observed. Based on the obtained results, a device design in principle is...

Low temperture (77 K) threshold characteristics of N-channel MOSFET's with a selfaligned polysilicon gate are considered both theoretically and experimentaly in this paper. Theoretical analysis and measured results are in good agreement. Relative to the device threshold behavior at room temperature, improvements in the subthreshold and threshold -voltage characteristics and in the substrate sensitivity at 77 K are observed. Based on the obtained results, a device design in principle is also presented for an enhancement-mode MOSFET that is suitable for operation at liquid nitrogen temperature.

本文对N沟多晶硅栅MOSFET的低温(77 K)阈值特性进行了理论和实验研究.结果表明,理论分析和测试结果一致,而且与器件的室温特性相比,77 K下器件的亚阈值和阈值电压特性以及衬底灵敏度均得到改善.基于这些结果,本文也给出了适于低温工作的增强型MOSFET的设计原则.

 
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