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dielectric function models
相关语句
  介电函数模型
     The Usage of Two Dielectric Function Models
     两个介电函数模型的用法(英文)
短句来源
     This paper presents an overview of the history,modifications,characteristics,and applications of two well known dielectric function models——the Forouhi-Bloomer model and the Tauc-Lorentz model——which have been widely used for the extraction and parameterization of optical constants in semiconductors and dielectrics.
     回顾了两个著名的广泛用于提取或参数化半导体和电介质材料光学常数的介电函数模型,即ForouhiBloomer和TaucLorentz模型的历史、各种改进、各自特点和应用.
短句来源
  相似匹配句对
     The Usage of Two Dielectric Function Models
     两个介电函数模型的用法(英文)
短句来源
     models;
     五、发展的模式;
短句来源
     TOPSIS valuation function models
     TOPSIS价值函数模型
短句来源
     The function of
     睾丸激素的功能
短句来源
     Property of the Dielectric Function in Nuclear Matter
     核物质中的介电函数性质
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  dielectric function models
Thus, dielectric function models that include features of both of these models are considered.
      


This paper presents an overview of the history,modifications,characteristics,and applications of two well known dielectric function models——the Forouhi-Bloomer model and the Tauc-Lorentz model——which have been widely used for the extraction and parameterization of optical constants in semiconductors and dielectrics.Based on analysis of their inherent characteristics and comparison via demonstrative examples,deeper and wider usage of the two models is predicted.

回顾了两个著名的广泛用于提取或参数化半导体和电介质材料光学常数的介电函数模型,即ForouhiBloomer和TaucLorentz模型的历史、各种改进、各自特点和应用.在揭示它们内在特点和比较运用在具体实例的基础上,拓展和预言了这两个模型更为深入的和更为广泛的应用.

We have calculated electron energy loss spectrum for electrons transmitted through a mask in projection electron lithography by Monte Carlo simulation based on the dielectric function model and Mott elastic scattering cross section.A good agreement between simulation and experiment is obtained.The calculation results of the transmission and contrast for the masks in scattering angular limitation for projection electron lithography show that the contrast is dominated by the thickness of scattering layer(thicker...

We have calculated electron energy loss spectrum for electrons transmitted through a mask in projection electron lithography by Monte Carlo simulation based on the dielectric function model and Mott elastic scattering cross section.A good agreement between simulation and experiment is obtained.The calculation results of the transmission and contrast for the masks in scattering angular limitation for projection electron lithography show that the contrast is dominated by the thickness of scattering layer(thicker the scattering layer higher the contrast),but is less affected by the thickness of the supporting membrane.Furthermore,with the increasing aperture angle the transmission increases but the contrast reduces,and the contrast decreases with increasing primary energy of electrons.

利用基于Mott散射截面和介电函数模型的Monte Carlo方法模拟了电子穿透掩膜的能量损失分布,其计算结果与实验结果符合很好.由此进一步计算了角度限制投影电子束光刻(SCALPEL)掩膜的穿透率和衬度,结果表明:散射体的厚度对衬度的影响较大,衬度随散射体厚度的增加而增强,而支撑体对衬度的影响较小;增大限制孔的孔径角时,透射率相应增大,但衬度会降低;衬度随入射电子的能量增加而减小.

 
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