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self-organized growth
相关语句
  自组织生长
     Self-organized growth of sub-monolayer Ge on Si(111)-(7×7)
     在Si(111)-(7×7)表面自组织生长二维Ge团簇超晶格
短句来源
     Self-Organized Growth of InAs Quantum Dots on GaAs (100)
     GaAs(100)衬底上自组织生长InAs量子点的研究
短句来源
     When etching weakly and distorted amorphous Si Si,C C and Si H bonding by high H 2 plasma the differential etch function of H plasma to nanocrystalline SiC and amorphous SiC makes the nanocrystalline SiC self-organized growth, hence the nc SiC films were crystallized.
     采用高H2 等离子体刻蚀弱的、扭曲的、非晶Si-C及Si-Si和Si-H等键时 ,由于H等离子体对纳米SiC晶粒与非晶态键的差异刻蚀作用 ,产生自组织生长 ,发生晶化。
短句来源
     Self-organized growth of sub-monolayer Ge on Si(111)-(7×7) surface has been investigated using ultra-high vacuum scanning tunneling microscopy (UHV-STM).
     利用超高真空扫描隧道显微镜研究了室温条件下亚单层Ge在Si(111) (7× 7)表面上的自组织生长 .
短句来源
     1. The prepared methods of ZnO self-organized growth were studied by details. Concentration of precursor was 0.5 Mol/L, temperature and holding times were 120℃(2 hours) and 185℃(6 hours) respectively . Under this condition ,regular ZnO microtubes were prepared.
     1.研究了自组织生长ZnO微米管的制备工艺,认为以前驱物浓度为0.5Mol/L,温度为120℃保温2小时,185℃保温6小时的条件下能够制备出形貌规则的ZnO微米管。
短句来源
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  “self-organized growth”译为未确定词的双语例句
     Self-organized growth of Ge quantum dots by UHV/CVD
     UHV/CVD自对准生长Ge量子点(英文)
短句来源
     ZnO low-dimensional materials,which have various shapes and special properties,and device can be acquired through ZnO self-organized growth.
     ZnO的自组织行为,使人们可以获得许多形态各异,特殊用途的低维材料及其器件。
短句来源
     Low-dimensional ZnO materials, which have various shapes and special properties,and device can be acquired through ZnO self-organized growth.
     ZnO的自组织行为使人们可以获得许多形态各异,特殊用途的低维材料及其器件。
短句来源
     Currently the most promising way to fabricate quantum dot (QD) is based on the self-organized growth during het-eroepitaxial process.
     半导体应变自组装外延生长量子点结构是目前最有前途的量子点制备方法。
短句来源
     The regular nano network structure in the morphology of the samples shows the fractal characteristics of the self-organized growth in the strain relaxation process.
     实验中观察到的规则的自相似网状纳米结构,显示了薄膜应力弛豫过程中自组织生长的分形特征.
短句来源
  相似匹配句对
     Cognition of Self
     认识自我
短句来源
     The Loss of Self
     论《蝇王》中人物自我的丢失
短句来源
     self-promotion;
     以自我营销为主;
短句来源
     Self-service
     自我服务
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     On the Organized Crime
     有组织犯罪之对策研究
短句来源
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  self-organized growth
The idea of combining self-organized growth with growth on patterned substrates to produce new types of nanostructures in a controlled manner is realized in atomic hydrogen assisted molecular beam epitaxy (MBE) on patterned GaAs (311)A substrates.
      
It is shown that ifχ(2) in silica fibres is induced by high energy photons which are harmonically generated from theχ(2) then a feedback based on this mutual induction is capable of a self-organized growth.
      
Feedback induction - a possible explanation for self-organized growth of χ(2) grating in silica fibres
      
Stranski-Krastanow self-organized growth of nano-scale ZnTe islands on (0 0 1)GaAs by metalorganic vapour phase epitaxy
      
Based on the experimental data, the compressive stress was estimated as the main reason of the self-organized growth.
      
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Abstract We present a new approach to fabricate quantum dots using self-organized growth of InAs on GaAs (100) substrates.Both cross-sectional and plan-view TEM micrographs clearly show that strikingly uniform and very dense InAs QDs appeared after a critical coverage of 1. 7 ML, while InAs film is rather flat before the critical coverage. Optical characterization of these self-organized InAs QDs are studied by photoluminescence spectroscopy.

本文利用在GaAs(100)衬底上自组织生长超薄层InAs的方法得到了InAs量子点结构.当InAs的覆盖度小于1.7ML(Mono-Layer)时,InAs层仍保持二维生长模式,而当InAs的覆盖度大于1.7ML时,InAs层将会成岛生长,得到的量子点的尺寸和分布相当均匀.我们还研究了不同覆盖度的InAs层的光致发光(PL)特性,结果发现在成岛前后,它们的PL特性有明显差异.

Ge quantum dots were grown by self-organizing growth method on Si (001) substrate at a temperature of 500℃, its photoluminescence spectrum was observed after annealing at 700℃ for 20 min. Atomic force microscopy and cross-sectional transmissionelectron microscopy were used to observe the size and density of the quantum dots. Raman spectra were measured for the samples annealed at diffrent temperatures in order to observe the interdiffusion between Si and Ge atoms.

生长温度500℃下,在Si(001)衬底上分子束外延自组织生长锗量子点.700℃退火20分钟后观察到其光致发光.原子力显微镜(AFM)和横截面试样透镜(XTEM)方法用于观察鼻子点的大小和密度.利用喇曼光谱观察不同温度退火引起的Ge与Si之间的互扩散.

\ The methods of self-organized growth and selective growth on a patterned mask for semiconductor quantum wires and quantum dots are described. The advantages and problems inherent in quantum wire and dot lasers are discussed, and it is indicated that the size fluctuation is the main obstacle for realizing quantum wire and dot lasers.

介绍了半导体量子线、量子点的自组织生长法和掩膜表面选择局部生长法,讨论了量子线、量子点激光器的优点以及遇到的问题,指出了大小均匀性是实现量子线、量子点激光器的主要障碍.

 
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