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quantum line
相关语句
  量子线
     for (110) and (112), due to the different height of the energy well in the inner corner, the structure of the quantum dot and the quantum line will emerge.
     当表面岛的侧面为(110) 和(112) 时,由于内角处势阱两边高度的不一样,有形成量子点和量子线结构的可能。
短句来源
     In this paper,a kind of technology for producing porous silicon(ps) thin film onmonocrystalline silicon substrate, using the electrochemical anodic oxidation (Ao) method, isintroduced. The micro- structure of ps thin Leyer is analyzed,diseover thet ps micro-stnlctureconsists of Quantum line network,its cross section is nm size, but its depth is um size.
     本文介绍了采用阳极氧化腐蚀工艺在单晶硅上制作多孔硅(PS)薄层,对PS薄层进行了微结构的分析为毫微结构量子线组成的复杂网络,其截面尺寸为纳米范围而纵向尺寸在微米量级。
短句来源
  “quantum line”译为未确定词的双语例句
     It is reliable that the Raman scattering obtained results from Te quantum line. Semiconductor tellurium (Te) has been loaded successfully in molecular sieve MCM 41 by diffusing method.
     本文采用固相合成反应方法,将单质半导体碲成功地组装在MCM41介孔分子筛中。
短句来源
  相似匹配句对
     On-line
     行业在线
短句来源
     On line
     行业在线
短句来源
     The higher the temperature, the more quantum noise the line exhibits.
     温度越高,介观无损耗传输 线中的量子噪声越大。
短句来源
     QUANTUM COMPUTERS
     量子信息讲座第一讲 量子计算机
短句来源
     QUANTUM COMMUNICATION
     量子通信
短句来源
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  quantum line
A high-resolution HCANH experiment with enhanced sensitivity via multiple quantum line narrowing
      
Application of multiple-quantum line narrowing with simultaneous 1H and 13C constant-time scalar-coupling evolution in PFG-HACAN
      
We give a new construction of symbols of the differential operators on the sections of a quantum line bundle L over a K?hler manifold M using the natural contravariant connection on L.
      
Arguments are given which show that the quantum line width calculated according to the Weisskopf-Wigner theory cannot be correct in the case of the oscillator.
      
The growth on patterned substrates has also been used to form quantum line structures.
      
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In this paper,a kind of technology for producing porous silicon(ps) thin film onmonocrystalline silicon substrate, using the electrochemical anodic oxidation (Ao) method, isintroduced.The micro- structure of ps thin Leyer is analyzed,diseover thet ps micro-stnlctureconsists of Quantum line network,its cross section is nm size, but its depth is um size.Thephotoluminescence(PL)spectra measured by us show that their maxinium peaks will applwar.blueshife with increasing AO electric current and AO time,and...

In this paper,a kind of technology for producing porous silicon(ps) thin film onmonocrystalline silicon substrate, using the electrochemical anodic oxidation (Ao) method, isintroduced.The micro- structure of ps thin Leyer is analyzed,diseover thet ps micro-stnlctureconsists of Quantum line network,its cross section is nm size, but its depth is um size.Thephotoluminescence(PL)spectra measured by us show that their maxinium peaks will applwar.blueshife with increasing AO electric current and AO time,and above experimental phenomena areexplained by Quantum confinement effect.

本文介绍了采用阳极氧化腐蚀工艺在单晶硅上制作多孔硅(PS)薄层,对PS薄层进行了微结构的分析为毫微结构量子线组成的复杂网络,其截面尺寸为纳米范围而纵向尺寸在微米量级。对PS样品光致发光谱的测定发现随阳极氧化电流密度和腐蚀时间的增加谱峰发生“兰移”并用PS的量子限制效应解释了上述实验现象。

Semiconductor tellurium (Te) has been loaded successfully in molecular sieve MCM 41 by diffusing method. MCM 41 consists of an ordered array of silica tubules comprising pores with uniform and controllable diameter in the nanometer range. XRD, infrared spectra and Raman scattering were studied to the heterostructures Te/MCM 41. The results showed that the loaded tellurium is liable to crystallize in the channel of the sieve. Modes soften from the bulk phase Te crystal were also observed in Raman spectra....

Semiconductor tellurium (Te) has been loaded successfully in molecular sieve MCM 41 by diffusing method. MCM 41 consists of an ordered array of silica tubules comprising pores with uniform and controllable diameter in the nanometer range. XRD, infrared spectra and Raman scattering were studied to the heterostructures Te/MCM 41. The results showed that the loaded tellurium is liable to crystallize in the channel of the sieve. Modes soften from the bulk phase Te crystal were also observed in Raman spectra. It is reliable that the Raman scattering obtained results from Te quantum line. Semiconductor tellurium (Te) has been loaded successfully in molecular sieve MCM 41 by diffusing method. MCM 41 consists of an ordered array of silica tubules comprising pores with uniform and controllable diameter in the nanometer range. XRD, infrared spectra and Raman scattering were studied to the heterostructures Te/MCM 41. The results showed that the loaded tellurium is liable to crystallize in the channel of the sieve. Modes soften from the bulk phase Te crystal were also observed in Raman spectra. It is reliable that the Raman scattering obtained results from Te quantum line.

无机介孔材料MCM41是高有序,直孔道介孔分子筛,具有孔径约4nm的一维均匀孔道,孔壁厚约1nm,介孔体积可达40%,是一种很理想的组装材料主体。半导体碲位于第Ⅵ族,其六方相的晶格排列呈螺旋链状结构。本文采用固相合成反应方法,将单质半导体碲成功地组装在MCM41介孔分子筛中。在组装体中,单质半导体碲保持着六方相的晶体结构,其拉曼晶体振动表现出纳米晶体的结构特征。真空热处理实验表明,组装体具有良好的热稳定性。Te的六方相和所具有的独特的螺旋链状结构使Te分子很容易进入MCM41的直孔道内,同时MCM41均匀而规则的直孔道限制了Te螺旋链的随机排列,因而被组装在直孔道内的Te能螺旋链式生长,形成一维半导体纳米晶体,排列均匀,尺寸单一,具有稳定的空间构型

The nanosized quasionedimensional hollow cores of carbon nanotubes make it possible for them to be filled with foreign substances. The physical and chemical properties of the filled carbon nanotubes are closely related to the type, the structure and the composition of the filling materials. Therefore, it is expected that various types of filledcarbon nanotubes can be designed and assembled to meet the application demand. This article reviews the current status of research in this area. Various chemical and...

The nanosized quasionedimensional hollow cores of carbon nanotubes make it possible for them to be filled with foreign substances. The physical and chemical properties of the filled carbon nanotubes are closely related to the type, the structure and the composition of the filling materials. Therefore, it is expected that various types of filledcarbon nanotubes can be designed and assembled to meet the application demand. This article reviews the current status of research in this area. Various chemical and physical methods and the possible mechanisms of filling the carbon nanotubes with foreign substances as well as that of encapsulating foreign substances during the preparation process are presented. The promising applications of nanotubes filled with foreign substances in the fields of electronics, information technology, biochemistry and medicine etc., are introduced. Furthermore, some necessary studies in the future, such as the mechanism of the interaction of the carbon nanotubes and the filling substances, the physical properties of the quantum lines and the preparation technique of aligned and filled carbon nanotubes are proposed.

 纳米碳管具有纳米尺度的准一维中空结构,这使得在其中空管腔内填充外来物质成为可能。填充纳米碳管的理化性能与填充物的种类、结构、组分密切相关,因而人们可以根据需要自主设计和组装各种类型的填充纳米碳管。通过综述目前在纳米碳管内填充外来物质领域的研究动态,介绍填充预先制备的纳米碳管和在制备纳米碳管的过程中同时包覆外来物质的各种物理和化学制备方法及其可能的微观机制,阐述了这类被填充的纳米碳管在电子工业、信息技术、生物化学以及医学等领域的应用前景,并对今后尚待开展的纳米碳管与填充物质的相互作用规律、这种量子线的物理性能及其阵列的制备技术等研究工作进行了探讨和展望。

 
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